Panasonic ESD Diodes MAZE062D Manuel utilisateur

ESD Diodes

Publication date: March 2004 SKE00010CED

Note) *:P

D= 200 mW achieved with a printed circuit board.

MAZE062D

Silicon planar type

For surge absorption circuit

■Features

•Low joint capacity zener diode

■Absolute Maximum Ratings Ta=25°C

Unit: mm

Parameter Symbol Rating Unit

Repetitive peak forward current IFRM 200 mA

Power dissipation *PD150 mW

Junction temperature Tj150 °C

Storage temperature Tstg −55 to +150 °C

Internal connection

Parameter Symbol Conditions Min Typ Max Unit

Forward voltage VFIF=10 mA 0.9 1.0 V

Zener voltage *VZIZ=5 mA 5.9 6.5 V

Zener rise operating resistance RZK IZ=0.5 mA 100 Ω

Zener operating resistance RZIZ=5 mA 30 Ω

Reverse current IRVR=5.5 V 3 µA

Terminal capacitance CtVR=0 V, f =1 MHz 8 pF

■Electrical Characteristics Ta= 25°C ±3°C

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. Absolute frequency of input and output is 5 MHz.

3. Electrostatic breakdown voltage: ±15 kV

Test method: IEC-801 (C = 150 pF, R = 330 Ω, Contact discharge: 10 times)

Test unit: ESS-200AX

4. *: The VZvalue is for the temperature of 25°C. In other cases, carry out the temperature compensation.

Guaranteed at 20 ms after power application.

0.3

2.0

±0.2

1.3

±0.1

(0.65)

(0.65) 0.9

±0.1

2.1

±0.1

1.25

±0.1

0 to 0.1

(0.15)

(0.425)

5˚

+0.1

–0

0.15

+0.1

–0.05

Marking Symbol: 6.2C

1: Cathode 1

2: Cathode 2

3: Anode

EIAJ: SC-79 SMini3-F1 Package

This product complies with the RoHS Directive (EU 2002/95/EC).

MAZE062D

SKE00010CED

0 2001601208040

100

150

200

250

Ambient temperature T

(°C)

Power dissipation P

(mW)

Print foil

t =0.035 mm

10 mm

0.8 mm

10 mm

−3

048

−2

−1

Zener voltage V

(V)

Zener current I

(mA)

=25°C

=−20°C

=150°C

=100°C

−2

0 0.4 0.8 1.2

−1

Forward voltage VF(V)

Forward current IF(mA)

=25°C

=−20°C

=150°C

=100°C

−5

0246

−4

−3

−2

−1

Reverse voltage V

(V)

Reverse current I

(nA)

=150°C

=25°C

=100°C

−1

−2

−1

10110

Zener operating resistance R

(Ω)

Zener current I

(mA)

= 25°C

−5

20 40

Temperature coefficient of zener voltage S

(mV / °C)

Zener current I

(mA)

24 6

Terminal capacitance C

(pF)

Reverse voltage V

(V)

PDTaIZVZIFVF

IRVRRZIZSZIZ

CtVR

This product complies with the RoHS Directive (EU 2002/95/EC).

Request for your special attention and precautions in using the technical information and

semiconductors described in this book

(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

regulations of the exporting country, especially, those with regard to security export control, must be observed.

(2)The technical information described in this book is intended only to show the main characteristics and application circuit examples

of the products, and no license is granted under any intellectual property right or other right owned by our company or any other

company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other

company which may arise as a result of the use of technical information described in this book.

(3)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office

equipment, communications equipment, measuring instruments and household appliances).

Consult our sales staff in advance for information on the following applications:

–Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support

systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-

ucts may directly jeopardize life or harm the human body.

–Any applications other than the standard applications intended.

(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-

provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product

Standards in advance to make sure that the latest specifications satisfy your requirements.

(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions

(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute

maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any

defect which may arise later in your equipment.

 Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure

mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire

or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.

(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,

thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which

damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.

(7)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita

Electric Industrial Co., Ltd.

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