Panasonic Multi Chip Discrete UP05C8G Manuel utilisateur

Multi Chip Discrete

Publication date: November 2005 SJJ00348AED 1

UP05C8G

Silicon NPN epitaxial planar type (Tr)

Silicon epitaxial planar type (CCD load device)

For CCD output circuits

Features

Two elements incorporated into one package (Tr + CCD load device)

Costs can be reduced through downsizing of the equipment and reduction of

the number of parts.

Basic Part Number

2SC3932 +CCD load device

Absolute Maximum Ratings Ta= 25°C

Parameter Symbol Rating Unit

Collector-base voltage

(Emitter open) VCBO 30 V

Collector-emitter voltage

(Base open) VCEO 20 V

Emitter-base voltage

(Collector open) VEBO 3 V

Collector current IC50 mA

CCD

load

device

Limiting element voltage Vmax 40 V

Limiting element current Imax 10 mA

Overall

Total power dissipation *PT125 mW

Junction temperature Tj125 °C

Storage temperature Tstg –55 to +125 °C

Note) *: Measuring on substrate at 17 mm ×10 mm ×1 mm

Marking Symbol: 4V

Internal Connection

(G)

(S)

(E) 2

(B)

(C)

6(D)

Tr FET

Unit: mm

1: Emitter 4: Source

2: Base 5: Drain

3: Gate 6: Collector

SSMini6-F1 Package

(0.30) 0.10±0.02

6 5 4

1 2 3 5°

5°

0.20+0.05

–0.02

1.60±0.050.55±0.05

0.10 max.

0 to 0.02

(0.20)

1.60±0.05

1番ピン端子表示

1.20±0.05

(0.20)

1.00±0.05

(0.50)(0.50)

UP05C8G

2SJJ00348AED

Electrical Characteristics Ta= 25°C±3°C

Tr

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) VCBO IC= 100 mA, IE= 0 30 V

Emitter-base voltage (Collector open) VEBO IE= 10 mA, IC= 0 3 V

Base-emitter voltage VBE VCE = 10 V, IC= 2 mA 720 mV

Forward current transfer ratio hFE VCE = 10 V, IC= 2 mA 25 250 

Transition frequency *fTVCB = 10 V, IE= -15 mA, f = 200 MHz 800 1

200 MHz

Power gain GPVCB = 10 V, IE= -1 mA, f = 100 MHz 20 dB

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

*: Pulse measurement

CCD Load Device

Parameter Symbol Conditions Min Typ Max Unit

Pinchi off current IPVDS = 10 V, VG= 0 3.5 5.5 mA

Output impedance ZOVDS = 10 V, VG= 0 0.05 MW

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

PTTa

Common characteristics chart

0 40 80 120

140

120

100

Total power dissipation PT(mW)

Ambient temperature Ta(°C)

UN05C8B_PT-Ta

ICVCE ICIBIBVBE

Characteristics charts of Tr

0 42 8 106 12

Collector current IC(mA)

Collector-emitter voltage VCE (V)

UP05C8G_IC-VCE

Ta=25°C

IB=300 µA

200 µA

150 µA

100 µA

50 µA

250 µA

0 0.4 0.60.2 1.00.8 1.2

Collector current IC(mA)

Base current IB(mA)

UP05C8G_IC-IB

VCE =10 V

0.40.20.1 0.3 0.5 0.6 0.7 0.8 0.9

0.7

0.6

0.8

0.2

0.1

0.3

0.5

0.4

Base current IB(mA)

Base-emitter voltage VBE (V)

UP05C8G_IB-VBE

VCE =10 V

Ta=25°C

UP05C8G

SJJ00348AED 3

ICVBE VCE(sat) IChFE IC

Cob VCB

0 0.4 0.60.2 1.20.8 1.0 1.4

Collector current IC(mA)

Base-emitter voltage VBE (V)

UP05C8G_IC-VBE

VCE =10 V

Ta=85°C

−25°C

25°C

0 2515 20105 30 35

100

0.1

UP05C8B_

Cob

VCB

Ta= 25°C

f = 1 MHz

Collector-base voltage VCB (V)

Collector output capacitance

(Common base, input open circuited) Cob (pF)

0.1 1 10 100

0.1

0.01

UP05C8G_

VCE(sat)

Collector-emitter saturation voltage VCE(sat) (V)

Collector current IC(mA)

IC/ IB= 10

Ta= 85°C

25°C

−25°C

1 10 100

300

200

250

150

100

350

UP05C8G_

hFE

Forward current transfer ratio hFE

Collector current IC(mA)

Ta= 85°C

−25°C

25°C

VCE = 10 V

IPVDS

Characteristics charts of CCD load device

0 42 14106 8 12 16

3.5

4.0

3.0

4.5

0.5

1.0

2.0

2.5

1.5

Peak current IP(mA)

Drain-source voltage VDS (V)

UP05C8G_IP-VDS

VG=0

Request for your special attention and precautions in using the technical information and

semiconductors described in this book

(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

regulations of the exporting country, especially, those with regard to security export control, must be observed.

(2)The technical information described in this book is intended only to show the main characteristics and application circuit examples

of the products, and no license is granted under any intellectual property right or other right owned by our company or any other

company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other

company which may arise as a result of the use of technical information described in this book.

(3)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office

equipment, communications equipment, measuring instruments and household appliances).

Consult our sales staff in advance for information on the following applications:

–Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support

systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-

ucts may directly jeopardize life or harm the human body.

–Any applications other than the standard applications intended.

(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-

provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product

Standards in advance to make sure that the latest specifications satisfy your requirements.

(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions

(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute

maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any

defect which may arise later in your equipment.

 Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure

mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire

or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.

(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,

thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which

damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.

(7)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita

Electric Industrial Co., Ltd.

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