Panasonic Transistors 2SC3931 Manuel utilisateur

Transistors

Publication date: March 2003 SJC00142BED

2SC3931

Silicon NPN epitaxial planar type

For high-frequency amplification

■Features

•Optimum for RF amplification of FM/AM radios

•High transition frequency fT

•S-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing

■Absolute Maximum Ratings Ta=25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) VCBO 30 V

Collector-emitter voltage (Base open) VCEO 20 V

Emitter-base voltage (Collector open) VEBO 3V

Collector current IC15 mA

Collector power dissipation PC150 mW

Junction temperature Tj150 °C

Storage temperature Tstg −55 to +150 °C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) VCBO IC=10 µA, IE=030V

Emitter-base voltage (Collector open) VEBO IE=10 µA, IC=03V

Base-emitter voltage VBE VCB =6 V, IE=−1 mA 720 mV

Forward current transfer ratio *hFE VCB =6 V, IE=−1 mA 65 260 

Transition frequency fTVCB =6 V, IE=−1 mA, f =200 MHz 450 650 MHz

Common-emitter reverse transfer Cre VCB =6 V, IE=−1 mA, f =10.7 MHz 0.8 1.0 pF

capacitance

Power gain GPVCB =6 V, IE=−1 mA, f =100 MHz 24 dB

Noise figure NF VCB =6 V, IE=−1 mA, f =100 MHz 3.3 dB

Unit: mm

■Electrical Characteristics Ta=25°C ±3°C

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

2.1±0.1

1.3±0.1

0.3+0.1

–0.0

2.0±0.2

1.25±0.10 (0.425)

(0.65) (0.65)

0.2±0.1

0.9±0.10 to 0.1

0.9+0.2

–0.1

0.15+0.10

–0.05

5˚

10˚

1: Base

2: Emitter

3:Collector

EIAJ: SC-70

SMini3-G1 Package

Marking Symbol: U

Rank C D

hFE 65 to 160 100 to 260

This product complies with the RoHS Directive (EU 2002/95/EC).

2SC3931

2SJC00142BED

ICVBE VCE(sat) IChFE IC

PCTaICVCE ICIB

fTIEZrb IECre VCE

0 16040 12080

200

160

120

Collector power dissipation PC(mW)

Ambient temperature Ta(°C)

018612

=25°C

=100 µA

80 µA

60 µA

40 µA

20 µA

Collector current IC(mA)

Collector-emitter voltage VCE (V)

0 18060 120

VCE =6 V

Ta=25°C

Base current I

(µA)

Collector current I

(mA)

0 2.01.60.4 1.20.8

=6 V

=75°C−25°C

25°C

Base-emitter voltage V

(V)

Collector current I

(mA)

0.1 1 10 100

0.01

0.1

100 IC/ IB=10

Ta=75°C

25°C

−25°C

Collector-emitter saturation voltage VCE(sat) (V)

Collector current IC(mA)

0.1 1 10 100

360

300

240

180

120

VCE =6 V

Ta=75°C

25°C

−25°C

Forward current transfer ratio hFE

Collector current IC(mA)

−0.1 −1−10 −100

1 200

1 000

800

600

400

200

=6 V

=25°C

Transition frequency f

(MHz)

Emitter current I

(mA)

−0.1 −1−10

120

100

=6 V

f =2 MHz

=25°C

Reverse transfer impedance Z

(Ω)

Emitter current I

(mA)

0.1 1 10 100

2.4

2.0

1.6

1.2

0.8

0.4

=1 mA

f =10.7 MHz

=25°C

Collector-emitter voltage VCE (V)

Common-emitter reverse transfer capacitance Cre (pF)

This product complies with the RoHS Directive (EU 2002/95/EC).

2SC3931

SJC00142BED

Cob VCB GPIENF IE

bie gie bre gre bfe gfe

boe goe

030252051510

1.2

1.0

0.8

0.6

0.4

0.2

f =1 MHz

=25°C

Collector-base voltage V

(V)

Collector output capacitance

(Common base, input open circuited) C

(pF)

−0.1 −1−10 −100

f =100 MHz

=50 Ω

=25°C

=10 V

6 V

Power gain G

(dB)

Emitter current I

(mA)

−0.1 −1−10 −100

f =100 MHz

=50 kΩ

=25°C

=6 V, 10 V

Noise figure NF (dB)

Emitter current IE(mA)

015936 12

+jb

=10 V

100

−1 mA

−2 mA

−4 mA

−7 mA

=−0.5 mA

150

f =10.7 MHz

Input conductance g

(mS)

Input susceptance b

(mS)

−0.5 0−0.1−0.4 −0.2−0.3

−6

−1

−2

−3

−4

−5

yre =gre +jbre

VCE =10 V

f =150 MHz

IE=−7 mA

−4 mA

−1 mA

100

10.7

Reverse transfer conductance g

(mS)

Reverse transfer susceptance bre (mS)

0 1008020 6040

−120

−20

−40

−60

−80

−100

yfe =gfe +jbfe

VCE =10 V

f =150 MHz

10.7

−0.4 mA

−1 mA

−2 mA

−4 mA

IE=−7 mA 100

100

150

Forward transfer conductance g

(mS)

Forward transfer susceptance bfe (mS)

0 0.50.40.1 0.30.2

1.2

1.0

0.8

0.6

0.4

0.2

yoe =goe +jboe

VCE =10 V

f =10.7 MHz

IE=−0.5 mA

−2 mA

−4 mA

−7 mA

−1 mA

100

150

Output conductance g

(mS)

Output susceptance b

(mS)

This product complies with the RoHS Directive (EU 2002/95/EC).

Request for your special attention and precautions in using the technical information and

semiconductors described in this book

(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

regulations of the exporting country, especially, those with regard to security export control, must be observed.

(2)The technical information described in this book is intended only to show the main characteristics and application circuit examples

of the products, and no license is granted under any intellectual property right or other right owned by our company or any other

company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other

company which may arise as a result of the use of technical information described in this book.

(3)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office

equipment, communications equipment, measuring instruments and household appliances).

Consult our sales staff in advance for information on the following applications:

–Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support

systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-

ucts may directly jeopardize life or harm the human body.

–Any applications other than the standard applications intended.

(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-

provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product

Standards in advance to make sure that the latest specifications satisfy your requirements.

(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions

(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute

maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any

defect which may arise later in your equipment.

 Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure

mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire

or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.

(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,

thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which

damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.

(7)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita

Electric Industrial Co., Ltd.

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