Panasonic Transistors 2SC2480 Manuel utilisateur

Transistors

Publication date: June 2006 SJC00116CED

2SC2480

Silicon NPN epitaxial planar type

For high-frequency amplification/oscillation/mixing

■Features

•High transition frequency fT

•Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing

■Absolute Maximum Ratings Ta=25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) VCBO 30 V

Collector-emitter voltage (Base open) VCEO 20 V

Emitter-base voltage (Collector open) VEBO 3V

Collector current IC50 mA

Collector power dissipation PC150 mW

Junction temperature Tj150 °C

Storage temperature Tstg −55 to +150 °C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) VCBO IC=100 µA, IE=030 V

Emitter-base voltage (Collector open) VEBO IE=10 µA, IC=03V

Base-emitter voltage VBE VCB =10 V, IE=−2 mA 720 mV

Forward current transfer ratio hFE VCB =10 V, IE=−2 mA 25 250 

Transition frequency *fTVCB =10 V, IE=−15 mA, f =200 MHz 800 1

300 1

600 MHz

Reverse transfer capacitance Crb VCE =6 V, IC=0, f =1 MHz 0.8 pF

(Common base)

Reverse transfer capacitance Cre VCB =10 V, IE=−1 mA, f =10.7 MHz 1.0 1.5 pF

(Common emitter)

Power gain GPVCB =10 V, IE=−1 mA, f =200 MHz 20 dB

Unit: mm

■Electrical Characteristics Ta=25°C ±3°C

1: Base

2: Emitter

3: Collector

JEITA: SC-59A

Mini3-G1 Package

0.40+0.10

–0.05

(0.65) 1.50+0.25

–0.05

2.8+0.2

–0.3

(0.95) (0.95)

1.9±0.1

2.90+0.20

–0.05

0.16+0.10

–0.06

0.4±0.2

5˚

10˚

0 to 0.1 1.1+0.2

–0.1

1.1+0.3

–0.1

Marking Symbol: R

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Rank T S No-rank

fT800 to 1

400 1

000 to 1

600 800 to 1

600

Marking symbol RT RS R

Product of no-rank is not classified and have no indication for rank.

This product complies with the RoHS Directive (EU 2002/95/EC).

2SC2480

2SJC00116CED

IBVBE ICVBE hFE IC

PCTaICVCE ICIB

VCE(sat) ICfTIECre VCE

0 16040 12080

240

200

160

120

Ambient temperature Ta(°C)

Collector power dissipation PC(mW)

0481216

=300 µA

50 µA

100 µA

150 µA

200 µA

250 µA

Collector-emitter voltage VCE (V)

Collector current IC(mA)

=25°C

0 500400300200100

Base current IB(µA)

Collector current IC(mA)

VCE =10 V

Ta=25°C

400

350

300

250

200

150

100

0 2.01.61.20.80.4

VCE =10 V

Ta=25°C

Base-emitter voltage VBE (V)

Base current IB(µA)

0 2.01.61.20.80.4

VCE =10 V

Ta=75°C−25°C

25°C

Base-emitter voltage VBE (V)

Collector current IC(mA)

0.1

240

200

160

120

1 10 100

=75°C

25°C

−25°C

Forward current transfer ratio h

=10 V

Collector current I

(mA)

0.01

0.1

100

1 10 100

Collector-emitter saturation voltage VCE(sat) (V)

Collector current IC(mA)

=10

=75°C

25°C

–25°C

−0.1 −1−10 −100

1 600

1 400

1 200

1 000

800

600

400

200

Transition frequency f

(MHz)

Emitter current I

(mA)

=10 V

=25°C

2.4

2.0

1.6

1.2

0.8

0.4

0.1 1 10 100

Collector-emitter voltage VCE (V)

=1 mA

f =10.7 MHz

=25°C

Reverse transfer capacitance C

(pF)

(Common emitter)

This product complies with the RoHS Directive (EU 2002/95/EC).

2SC2480

SJC00116CED

Zrb IEGPIENF IE

bib gib brb grb bfb gfb

bob gob

−0.1 −1−10

Reverse transfer impedance Z

(Ω)

120

100

=10 V

f =2 MHz

=25°C

Emitter current IE(mA)

−0.1 −1−10 −100

Power gain G

(dB)

=10 V

f =100 MHz

=50 Ω

=25°C

Emitter current I

(mA)

Noise figure NF (dB)

−0.1 −1−10 −100

=10 V

f =100 MHz

=50 kΩ

=25°C

Emitter current I

(mA)

−60

05040302010

−10

−20

−30

−40

−50

Input conductance gib (mS)

Input susceptance b

(mS)

+jb

=10 V

f =900 MHz

=−2 mA

−5 mA

300

500

600

200

−2.4

−1.0 0−0.2−0.4−0.6−0.8

−0.4

−0.8

−1.2

−1.6

−2.0

f =900 MHz

=−5 mA

−2 mA

300

500

600

200

Reverse transfer conductance grb (mS)

Reverse transfer susceptance b

(mS)

+jb

=10 V

−60 40200−20−40

−2 mA

300

500

600

900

f =200 MHz

IE=−5 mA

Forward transfer conductance gfb (mS)

Forward transfer susceptance bfb (mS)

yfb =gfb +jbfb

VCB =10 V

0 2.01.61.20.80.4

−5 mA

300

500

600

900

f =200 MHz

IE=−2 mA

Output conductance g

(mS)

Output susceptance b

(mS)

yob =gob +jbob

VCE =10 V

This product complies with the RoHS Directive (EU 2002/95/EC).

Request for your special attention and precautions in using the technical information and

semiconductors described in this book

(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

regulations of the exporting country, especially, those with regard to security export control, must be observed.

(2)The technical information described in this book is intended only to show the main characteristics and application circuit examples

of the products, and no license is granted under any intellectual property right or other right owned by our company or any other

company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other

company which may arise as a result of the use of technical information described in this book.

(3)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office

equipment, communications equipment, measuring instruments and household appliances).

Consult our sales staff in advance for information on the following applications:

–Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support

systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-

ucts may directly jeopardize life or harm the human body.

–Any applications other than the standard applications intended.

(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-

provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product

Standards in advance to make sure that the latest specifications satisfy your requirements.

(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions

(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute

maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any

defect which may arise later in your equipment.

 Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure

mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire

or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.

(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,

thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which

damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.

(7)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita

Electric Industrial Co., Ltd.

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