Panasonic Transistors 2SC5632G Manuel utilisateur

Transistors

Publication date: June 2007 SJC00369AED

This product complies with the RoHS Directive (EU 2002/95/EC).

2SC5632G

Silicon NPN epitaxial planar type

For high-frequency amplification and switching

■Features

•High transition frequency fT

•S-Mini type package, allowing downsizing of the equipment

and automatic insertion through the tape packing

■Absolute Maximum Ratings Ta=25°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) VCBO IC=100 µA, IE=015 V

Emitter-base cutoff current (Collector open)

IEBO VEB =2 V, IC=02µA

Forward current transfer ratio hFE VCE =4 V, IC=2 mA 100 350 

hFE ratio *∆hFE hFE2: VCE =4 V, IC=100 µA 0.6 1.5 

hFE1: VCE =4 V, IC=2 mA

Collector-emitter saturation voltage VCE(sat) IC=20 mA, IB=4 mA 0.1 V

Transition frequency fTVCE =5 V, IC=15 mA, f =200 MHz 0.6 1.1 GHz

Collector output capacitance Cob VCB =10 V, IE=0, f =1 MHz 1.0 1.6 pF

(Common base, input open circuited)

■Electrical Characteristics Ta=25°C ±3°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) VCBO 15 V

Collector-emitter voltage (Base open) VCEO 8V

Emitter-base voltage (Collector open) VEBO 3V

Collector current IC50 mA

Collector power dissipation PC150 mW

Junction temperature Tj150 °C

Storage temperature Tstg −55 to +150 °C

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *:∆hFE =hFE2 / hFE1

■Package

•Code

SMini3-F2

•Marking Symbol: 2R

•Pin Name

1: Base

2: Emitter

3: Collector

2SC5632G

2SJC00369AED

This product complies with the RoHS Directive (EU 2002/95/EC).

PCTaICVCE ICVBE

VCE(sat) IChFE ICCob VCB

0 16040 12080

160

120

Ambient temperature T

(°C)

Collector power dissipation P

(mW)

06842

= 25°C

= 300 µA

250 µA

200 µA

150 µA

100 µA

50 µA

Collector current I

(mA)

Collector-emitter voltage V

(V)

0 1.20.80.4

120

= 85°C

−25°C

25°C

= 4 V

Collector current I

(mA)

Base-emitter voltage V

(V)

11010

−1

−2

−3

= 85°C

/ I

= 10

25°C

−25°C

Collector-emitter saturation voltage V

CE(sat)

(V)

Collector current I

(mA)

11010

120

200

160 Ta= 85°C

25°C

−25°C

Forward current transfer ratio h

Collector current I

(mA)

VCE = 4 V

11010

2.5

1.5

0.5

f = 1 MHz

= 25˚C

Collector-base voltage V

(V)

Collector output capacitance

(Common base, input open circuited) C

(pF)

This product complies with the RoHS Directive (EU 2002/95/EC).

SMini3-F2 Unit: mm

0.30 +0.05

−0.02

0.13 +0.05

−0.02

2.00 ±0.20

(0.89)

0.90 ±0.10

(0.65)(0.65)

1.30 ±0.10

1.25 ±0.10

2.10 ±0.10

0.425 ±0.050

(0.49)

0 to 0.10

(5°)

Request for your special attention and precautions in using the technical information and

semiconductors described in this book

(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

regulations of the exporting country, especially, those with regard to security export control, must be observed.

(2)The technical information described in this book is intended only to show the main characteristics and application circuit examples

of the products, and no license is granted under any intellectual property right or other right owned by our company or any other

company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other

company which may arise as a result of the use of technical information described in this book.

(3)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office

equipment, communications equipment, measuring instruments and household appliances).

Consult our sales staff in advance for information on the following applications:

–Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support

systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-

ucts may directly jeopardize life or harm the human body.

–Any applications other than the standard applications intended.

(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-

provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product

Standards in advance to make sure that the latest specifications satisfy your requirements.

(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions

(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute

maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any

defect which may arise later in your equipment.

 Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure

mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire

or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.

(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,

thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which

damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.

(7)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita

Electric Industrial Co., Ltd.

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