Panasonic Rectifier Diodes MA6X129 Manuel utilisateur

Rectifier Diodes

Publication date: March 2004 SKC00003BED

MA6X129 (MA129)

Silicon epitaxial planar type

For small power current rectification

■Features

•Three isolated elements are contained in one package, allowing

high-density mounting

•Allowing high voltage rectification

■Absolute Maximum Ratings Ta=25°C

Parameter Symbol Conditions Min Typ Max Unit

Forward voltage VFIF=200 mA 1.2 V

Reverse current IRVR=200 V 200 nA

Terminal capacitance CtVR=0 V, f =1 MHz 4.5 pF

■Electrical Characteristics Ta=25°C ±3°C

Note) *: t =l s

Marking Symbol: M4F

Note) The part number in the parenthesis shows conventional part number.

Unit: mm

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. Absolute frequency of input and output is 3 MHz.

1 : Cathode 1 4 : Anode 3

2 : Cathode 2 5 : Anode 2

3 : Cathode 3 6 : Anode 1

EIAJ : SC-74 Mini6-G1 Package

Internal Connection

5 2

2.90

1.9

±0.1

0.16

+0.10

–0.06

2.8

+0.2

–0.3

1.1

+0.3

–0.1

1.1

0 to 0.1

+0.2

–0.1

1.50

(0.65)

0.4

±0.2

+0.25

–0.05

(0.95)

0.30

+0.10

–0.05

0.50

+0.10

–0.05

(0.95)

654

132

+0.20

–0.05

5˚

10˚

Parameter Symbol Rating Unit

Reverse voltage VR200 V

Maximum peak reverse voltage VRM 200 V

Output current Single IO200 mA

Triple 100

Repetitive peak forward Single IFRM 600 mA

current Triple 200

Non-repetitive peak Single IFSM 1

000 mA

forward surge current *Triple 350

Junction temperature Tj150 °C

Storage temperature Tstg −55 ∼ +150 °C

This product complies with the RoHS Directive (EU 2002/95/EC).

MA6X129

SKC00003BED

IFVF

IRTa

IRVR

VFTa

10 −2

0 0.2 0.4 0.6 0.8 1.0 1.2

10 −1

102

103

Forward voltage VF(V)

Forward current IF(mA)

Ta=150°C−20°C

100°C 25°C

0.4

0.8

1.2

1.6

−40 0 40 80 120 160 200

Ambient temperature T

(°C)

Forward voltage V

(V)

=200 mA

3 mA

10 mA

10 −3

0 40 80 120 160 200 240

10 −2

10 −1

102

Reverse voltage VR(V)

Reverse current IR(nA)

Ta=150°C

100°C

25°C

−3

−40 0 40 80 120 160 200

−2

−1

Ambient temperature T

(°C)

Reverse current I

(nA)

=200 V 100 V

10 V

0 50 100 150 200 250 300

Reverse voltage V

(V)

Terminal capacitance C

(pF)

10 −1

102

103

10 −1110

Pulse width tW(ms)

Forward surge current IF(surge) (A)

Breakdown pint (typ.)

IF(surge)

Ta=25°C

IF(surge) tW

CtVR

This product complies with the RoHS Directive (EU 2002/95/EC).

Request for your special attention and precautions in using the technical information and

semiconductors described in this book

(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

regulations of the exporting country, especially, those with regard to security export control, must be observed.

(2)The technical information described in this book is intended only to show the main characteristics and application circuit examples

of the products, and no license is granted under any intellectual property right or other right owned by our company or any other

company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other

company which may arise as a result of the use of technical information described in this book.

(3)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office

equipment, communications equipment, measuring instruments and household appliances).

Consult our sales staff in advance for information on the following applications:

–Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support

systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-

ucts may directly jeopardize life or harm the human body.

–Any applications other than the standard applications intended.

(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-

provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product

Standards in advance to make sure that the latest specifications satisfy your requirements.

(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions

(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute

maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any

defect which may arise later in your equipment.

 Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure

mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire

or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.

(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,

thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which

damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.

(7)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita

Electric Industrial Co., Ltd.

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