Panasonic Transistors 2SC3936G Manuel utilisateur

Transistors

Publication date: April 2007 SJC00362AED

This product complies with the RoHS Directive (EU 2002/95/EC).

2SC3936G

Silicon NPN epitaxial planar type

For high-frequency amplification

■Features

•Optimum for RF amplification, oscillation, mixing, and IF of

FM/AM radios

•S-Mini type package, allowing downsizing of the equipment

and automatic insertion through the tape packing

■Absolute Maximum Ratings Ta=25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) VCBO 30 V

Collector-emitter voltage (Base open) VCEO 20 V

Emitter-base voltage (Collector open) VEBO 5V

Collector current IC30 mA

Collector power dissipation PC150 mW

Junction temperature Tj150 °C

Storage temperature Tstg −55 to +150 °C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) VCBO IC=10 µA, IE=030V

Collector-emitter voltage (Base open) VCEO IC=2 mA, IB=020V

Emitter-base voltage (Collector open) VEBO IE=10 µA, IC=05V

Forward current transfer ratio *hFE VCE =10 V, IC=1 mA 70 250 

Transition frequency fTVCB =10 V, IE=−1 mA, f =200 MHz 150 230 MHz

Reverse transfer capacitance Cre VCB =10 V, IE=−1 mA, f =10.7 MHz 1.3 pF

(Common emitter)

■Electrical Characteristics Ta=25°C ±3°C

Rank B C

hFE 70 to 160 110 to 250

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

■Package

•Code

SMini3-F2

•Marking Symbol: K

•Pin Name

1. Base

2. Emitter

3. Collector

2SC3936G

2SJC00362AED

This product complies with the RoHS Directive (EU 2002/95/EC).

ICVBE VCE(sat) IChFE IC

PCTaICVCE ICIB

fTIEZrb IECre VCE

0 16040 12080

240

200

160

120

Collector power dissipation P

(mW)

Ambient temperature T

(°C)

0128164

Ta=25°C

IB=100 µA

80 µA

60 µA

40 µA

20 µA

Collector current IC(mA)

Collector-emitter voltage VCE (V)

0 12040 16080

=10 V

=25°C

Base current I

(µA)

Collector current I

(mA)

0 2.01.60.4 1.20.8

=10 V

=75°C−25°C

25°C

Base-emitter voltage VBE (V)

Collector current I

(mA)

0.1 1 10 100

0.01

0.1

100 I

/ I

=10

=75°C

25°C

−25°C

Collector-emitter saturation voltage V

CE(sat)

(V)

Collector current I

(mA)

0.1 1 10 100

300

250

200

150

100

VCE =10 V

Ta=75°C

25°C

−25°C

Forward current transfer ratio hFE

Collector current IC(mA)

−0.1 −1−10 −100

600

500

400

300

200

100

=25°C

=10 V

6 V

Transition frequency f

(MHz)

Emitter current I

(mA)

−0.1 −1−10

f =2 MHz

Ta=25°C

VCB =6 V

10 V

Reverse transfer impedance Zrb (Ω)

Emitter current IE(mA)

0.1 1 10 100

2.4

2.0

1.6

1.2

0.8

0.4

=1 mA

f =10.7 MHz

=25°C

Collector-emitter voltage VCE (V)

Reverse transfer capacitance C

(pF)

(Common emitter)

2SC3936G

SJC00362AED

This product complies with the RoHS Directive (EU 2002/95/EC).

Cob VCB bie gie bre gre

bfe gfe boe goe

1 10 100

1.6

1.2

0.4

0.8

f =1 MHz

=25°C

Collector-base voltage VCB (V)

Collector output capacitance

(Common base, input open circuited) Cob (pF)

020164128

+jb

=10 V

f =0.45 MHz

=−0.1 mA

−1 mA

−2 mA

−4 mA

−7 mA

10.7

100

Input conductance gie (mS)

Input susceptance b

(mS)

−0.5 0−0.1−0.4 −0.2−0.3

−3.0

−0.5

−1.0

−1.5

−2.0

−2.5

yre =gre +jbre

VCE =10 V

f =0.45 MHz

IE=−7 mA

−2 mA

−4 mA

−1 mA

−0.4 mA

100

10.7

Reverse transfer conductance g

(mS)

Reverse transfer susceptance bre (mS)

0 1008020 6040

−120

−20

−40

−60

−80

−100

+jb

=10 V

f =0.45 MHz

10.7

0.45

−0.4 mA

−0.1 mA

−1 mA

−2 mA −4 mA

10.7

=−7 mA

100

Forward transfer conductance g

(mS)

Forward transfer susceptance bfe (mS)

0 1.00.80.2 0.60.4

1.2

1.0

0.8

0.6

0.4

0.2

+jb

=10 V

f =0.45 MHz

=−0.1 mA

−7 mA

−4 mA

−2 mA

−1 mA

−0.4 mA

10.7

100

Output conductance g

(mS)

Output susceptance b

(mS)

This product complies with the RoHS Directive (EU 2002/95/EC).

SMini3-F2 Unit: mm

0.30 +0.05

−0.02

0.13 +0.05

−0.02

2.00 ±0.20

(0.89)

0.90 ±0.10

(0.65)(0.65)

1.30 ±0.10

1.25 ±0.10

2.10 ±0.10

0.425 ±0.050

(0.49)

0 to 0.10

(5°)

Request for your special attention and precautions in using the technical information and

semiconductors described in this book

(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

regulations of the exporting country, especially, those with regard to security export control, must be observed.

(2)The technical information described in this book is intended only to show the main characteristics and application circuit examples

of the products, and no license is granted under any intellectual property right or other right owned by our company or any other

company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other

company which may arise as a result of the use of technical information described in this book.

(3)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office

equipment, communications equipment, measuring instruments and household appliances).

Consult our sales staff in advance for information on the following applications:

–Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support

systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-

ucts may directly jeopardize life or harm the human body.

–Any applications other than the standard applications intended.

(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-

provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product

Standards in advance to make sure that the latest specifications satisfy your requirements.

(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions

(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute

maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any

defect which may arise later in your equipment.

 Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure

mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire

or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.

(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,

thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which

damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.

(7)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita

Electric Industrial Co., Ltd.

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