Cypress Semiconductor Perform CY62167E MoBL Manuel utilisateur

16-Mbit (1M x 16 / 2M x 8) Static RAM

CY62167E MoBL®

Cypress Semiconductor Corporation • 198 Champion Court • San Jose,CA 95134-1709 • 408-943-2600

Document #: 001-15607 Rev. *A Revised June 07, 2007

Features

• Configurable as 1M x 16 or as 2M x 8 SRAM

• Very high speed: 45 ns

• Wide voltage range: 4.5V–5.5V

• Ultra low standby power

— Typical standby current: 1.5 µA

— Maximum standby current: 12 µA

• Ultra low active power

— Typical active current: 2.2 mA @ f = 1 MHz

• Easy memory expansion with CE1, CE2, and OE features

• Automatic power down when deselected

• CMOS for optimum speed and power

• Offered in 48-pin TSOP I package

Functional Description[1]

The CY62167E is a high performance CMOS static RAM

organized as 1M words by 16 bits/2M words by 8 bits. This

device features advanced circuit design to provide an ultra low

active current. This is ideal for providing More Battery Life™

(MoBL®) in portable applications such as cellular telephones.

The device also has an automatic power down feature that

reduces power consumption by 99% when addresses are not

toggling. Place the device into standby mode when deselected

(CE1HIGH, or CE2 LOW, or both BHE and BLE are HIGH).

The input and output pins (IO0through IO15) are placed in a

high impedance state when:

• The device is deselected (CE1 HIGH or CE2LOW)

• Outputs are disabled (OE HIGH)

• Both Byte High Enable and Byte Low Enable are disabled

(BHE, BLE HIGH) or

• A write operation is in progress (CE1LOW, CE2HIGH, and

WE LOW)

To write to the device, take Chip Enables (CE1 LOW and CE2

HIGH) and Write Enable (WE) input LOW. If Byte Low Enable

(BLE) is LOW, then data from IO pins (IO0through IO7), is

written into the location specified on the address pins (A0

through A19). If Byte High Enable (BHE) is LOW, then data

from the IO pins (IO8through IO15) is written into the location

specified on the address pins (A0through A19).

To read from the device, take Chip Enables (CE1 LOW and

CE2HIGH) and Output Enable (OE) LOW while forcing the

Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,

then data from the memory location specified by the address

pins appears on IO0to IO7. If Byte High Enable (BHE) is LOW,

then data from memory appears on IO8to IO15. See the “Truth

Table” on page 10 for a complete description of read and write

modes.

Logic Block Diagram

1M × 16 / 2M x 8

RAM ARRAY IO0–IO7

ROW DECODER

A 8

A 7

A 6

A 5

A 2

COLUMN DECODER

A11

A12

A13

A14

A15

SENSE AMPS

DATA IN DRIVERS

A 4

A 3IO8–IO15

BLE

BHE

A16

A 0

A 1

A17

A 9

A18

A10

POWER DOWN

CIRCUIT BHE

BLE

CE2

CE1CE2

CE1

BYTE

A19

Note

1. For best practice recommendations, refer to the Cypress application note AN1064, SRAM System Guidelines.

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CY62167E MoBL®

Document #: 001-15607 Rev. *A Page 2 of 12

Pin Configuration[2, 3]

48-Pin TSOP I Top View

Product Portfolio

Product VCC Range (V) Speed

(ns)

Power Dissipation

Operating ICC (mA) Standby ISB2 (µA)

f = 1 MHz f = fmax

Min Typ[4] Max Typ[4] Max Typ[4] Max Typ[4] Max

CY62167ELL 4.5 5.0 5.5 45 2.2 4.0 25 30 1.5 12

A15

A14

A13

A12

A11

A10

A19

BHE

BLE

A18

A17

A16

BYTE

Vss

IO15/A20

IO7

IO14

IO6

IO13

IO5

IO12

IO4

Vcc

IO11

IO3

IO10

IO2

IO9

IO1

IO8

IO0

Vss

CE1

Notes

2. NC pins are not connected on the die.

3. The BYTE pin in the 48-TSOPI package must be tied to VCC to use the device as a 1M X 16 SRAM. The 48-TSOPI package can also be used as a 2M X 8 SRAM

by tying the BYTE signal to VSS. In the 2M x 8 configuration, pin 45 is A20, while BHE, BLE and IO8to IO14 pins are not used.

4. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA= 25°C.

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CY62167E MoBL®

Document #: 001-15607 Rev. *A Page 3 of 12

Maximum Ratings

Exceeding the maximum ratings may shorten the battery life

of the device. User guidelines are not tested.

Storage Temperature ................................–65°C to + 150°C

Ambient Temperature with

Power Applied............................................–55°C to + 125°C

Supply Voltage to Ground

Potential........................................................... –0.5V to 6.0V

DC Voltage Applied to Outputs

in High-Z State[5, 6]........................................... –0.5V to 6.0V

DC Input Voltage[5, 6] ........................................–0.5V to 6.0V

Output Current into Outputs (LOW) ............................ 20 mA

Static Discharge Voltage........................................... >2001V

(MIL-STD-883, Method 3015)

Latch Up Current .....................................................>200 mA

Operating Range

Device Range Ambient

Temperature VCC[7]

CY62167ELL Industrial –40°C to +85°C 4.5V to 5.5V

Electrical Characteristics

Over the Operating Range

Parameter Description Test Conditions 45 ns Unit

Min Typ[4] Max

VOH Output HIGH Voltage IOH = –1.0 mA 2.4 V

VOL Output LOW Voltage IOL = 2.1mA 0.4 V

VIH Input HIGH Voltage VCC = 4.5V to 5.5V 2.2 VCC + 0.5V V

VIL Input LOW Voltage VCC = 4.5V to 5.5V –0.5 0.7[8] V

IIX Input Leakage Current GND < VI< VCC –1 +1 µA

IOZ Output Leakage Current GND < VO <VCC, Output Disabled –1 +1 µA

ICC VCC Operating Supply

Current

f = fMAX = 1/tRC VCC = VCC(max)

IOUT = 0 mA

CMOS levels

25 30 mA

f = 1 MHz 2.2 4.0 mA

ISB2[9] Automatic CE Power Down

Current—CMOS Inputs

CE1> VCC – 0.2V or CE2< 0.2V,

VIN > VCC – 0.2V or VIN < 0.2V,

f = 0, VCC = VCC(max)

1.5 12 µA

Capacitance[10]

Parameter Description Test Conditions Max Unit

CIN Input Capacitance TA= 25°C, f = 1 MHz,

VCC = VCC(typ)

10 pF

COUT Output Capacitance 10 pF

Thermal Resistance[10]

Parameter Description Test Conditions TSOP I Unit

ΘJA Thermal Resistance

(junction to ambient)

Still air, soldered on a 3 × 4.5 inch, two-layer printed circuit

board

60 °C/W

ΘJC Thermal Resistance

(junction to case)

4.3 °C/W

Notes

5. VIL(min) = –2.0V for pulse durations less than 20 ns.

6. VIH(max) = VCC + 0.75V for pulse durations less than 20 ns.

7. Full Device AC operation is based on a 100 µs ramp time from 0 to VCC (min) and 200 µs wait time after VCC stabilization.

8. Under DC conditions the device meets a VIL of 0.8V. However, in dynamic conditions Input LOW Voltage applied to the device must not be higher than 0.7V.

9. Only chip enables (CE1 and CE2), byte enables (BHE and BLE) and BYTE need to be tied to CMOS levels to meet the ISB2 / ICCDR spec. Other inputs can be

left floating.

10. Tested initially and after any design or process changes that may affect these parameters.

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CY62167E MoBL®

Document #: 001-15607 Rev. *A Page 4 of 12

AC Test Loads and Waveforms

VCC

OUTPUT

30 pF

INCLUDING

JIG AND

SCOPE

GND

90%

10% 90%

10%

RISE TIME= 1 V/ns FALL TIME= 1 V/ns

OUTPUT V

EQUIVALENT TO: THÉVENIN EQUIVALENT

ALL INPUT PULSES

RTH

Parameters Values Unit

R1 1800 Ω

R2 990 Ω

RTH 639 Ω

VTH 1.77 V

Data Retention Characteristics

Over the Operating Range

Parameter Description Conditions Min Typ[4] Max Unit

VDR VCC for Data Retention 2.0 V

ICCDR[9] Data Retention Current VCC= VDR

CE1> VCC – 0.2V, CE2< 0.2V,

VIN > VCC – 0.2V or VIN < 0.2V

12 µA

tCDR[10] Chip Deselect to Data

Retention Time 0ns

tR[11] Operation Recovery

Time tRC ns

Data Retention Waveform[12]

VCC(min)

tCDR

VDR >2.0 V

DATA RETENTION MODE

CE1or

VCC

BHE. BLE

CE2

Notes

11. Full device operation requires linear VCC ramp from VDR to VCC(min) > 100 µs or stable at VCC(min) > 100 µs.

12. BHE. BLE is the AND of BHE and BLE. Deselect the chip by either disabling the chip enable signals or by disabling BHE and BLE.

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CY62167E MoBL®

Document #: 001-15607 Rev. *A Page 5 of 12

Switching Characteristics

Over the Operating Range[13, 14]

Parameter Description

45 ns

Unit

Min Max

READ CYCLE

tRC Read Cycle Time 45 ns

tAA Address to Data Valid 45 ns

tOHA Data Hold from Address Change 10 ns

tACE CE1LOW and CE2 HIGH to Data Valid 45 ns

tDOE OE LOW to Data Valid 22 ns

tLZOE OE LOW to LOW-Z[15] 5ns

tHZOE OE HIGH to High-Z[15, 16] 18 ns

tLZCE CE1LOW and CE2 HIGH to Low-Z[15] 10 ns

tHZCE CE1HIGH and CE2 LOW to High-Z[15, 16] 18 ns

tPU CE1LOW and CE2 HIGH to Power Up 0 ns

tPD CE1HIGH and CE2 LOW to Power Down 45 ns

tDBE BLE/BHE LOW to Data Valid 45 ns

tLZBE BLE/BHE LOW to Low-Z[15] 10 ns

tHZBE BLE/BHE HIGH to HIGH-Z[15, 16] 18 ns

WRITE CYCLE[17]

tWC Write Cycle Time 45 ns

tSCE CE1LOW and CE2 HIGH to Write End 35 ns

tAW Address Setup to Write End 35 ns

tHA Address Hold from Write End 0 ns

tSA Address Setup to Write Start 0 ns

tPWE WE Pulse Width 35 ns

tBW BLE/BHE LOW to Write End 35 ns

tSD Data Setup to Write End 25 ns

tHD Data Hold from Write End 0 ns

tHZWE WE LOW to High-Z[15, 16] 18 ns

tLZWE WE HIGH to Low-Z[15] 10 ns

Notes

13. Test conditions for all parameters other than tri-state parameters assume signal transition time of 1 V/ns, timing reference levels of VCC(typ)/2, input pulse levels

of 0 to VCC(typ), and output loading of the specified IOL/IOH as shown in “AC Test Loads and Waveforms” on page 4.

14. AC timing parameters are subject to byte enable signals (BHE or BLE) not switching when chip is disabled. See application note AN13842 for further clarification.

15. At any temperature and voltage condition, tHZCE is less than tLZCE, tHZBE is less than tLZBE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any device.

16. tHZOE, tHZCE, tHZBE, and tHZWE transitions are measured when the outputs enter a high impedance state.

17. The internal write time of the memory is defined by the overlap of WE, CE1 = VIL, BHE or BLE or both = VIL, and CE2 = VIH. All signals must be active to initiate

a write and any of these signals can terminate a write by going inactive. The data input setup and hold timing should be referenced to the edge of the signal that

terminates the write.

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CY62167E MoBL®

Document #: 001-15607 Rev. *A Page 6 of 12

Switching Waveforms

Figure 1 shows address transition controlled read cycle waveforms.[18, 19]

Figure 1. Read Cycle No. 1

Figure 2 shows OE controlled read cycle waveforms.[19, 20]

Figure 2. Read Cycle No. 2

PREVIOUS DATA VALID DATA VALID

tAA

tOHA

tRC

ADDRESS

DATA OUT

50%

DATA VALID

tRC

tACE

tDOE

tLZOE

tLZCE

tPU

HIGH IMPEDANCE

tHZOE

tPD

tHZBE

tLZBE

HZCE

tDBE

CE1

ADDRESS

CE2

BHE/BLE

DATA OUT

VCC

SUPPLY

CURRENT

HIGH

ICC

ISB

IMPEDANCE

Notes

18. The device is continuously selected. OE, CE1 = VIL, BHE, BLE or both = VIL, and CE2 = VIH.

19. WE is HIGH for read cycle.

20. Address valid before or similar to CE1, BHE, BLE transition LOW and CE2transition HIGH.

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CY62167E MoBL®

Document #: 001-15607 Rev. *A Page 7 of 12

Figure 3 shows WE controlled write cycle waveforms.[17, 21, 22]

Figure 3. Write Cycle No. 1

Switching Waveforms (continued)

tHD

tSD

tPWE

tSA

tHA

tAW

tSCE

tWC

tHZOE

VALID DATA

tBW

NOTE 23

CE1

ADDRESS

CE2

DATA IO

BHE/BLE

Notes

21. Data IO is high impedance if OE = VIH.

22. If CE1goes HIGH and CE2goes LOW simultaneously with WE = VIH, the output remains in a high impedance state.

23. During this period the IOs are in output state and input signals must not be applied.

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CY62167E MoBL®

Document #: 001-15607 Rev. *A Page 8 of 12

Figure 4 shows CE1or CE2controlled write cycle waveforms.[17, 21, 22]

Figure 4. Write Cycle No. 2

Figure 5 shows WE controlled, OE LOW write cycle waveforms.[22]

Figure 5. Write Cycle No. 3

Switching Waveforms (continued)

tHD

tSD

tPWE

tHA

tAW

tSCE

tWC

tHZOE

VALID DATA

tBW

tSA

NOTE 23

CE1

ADDRESS

CE2

DATA IO

BHE/BLE

VALID DATA

tHD

tSD

tLZWE

tPWE

tSA

tHA

tAW

tSCE

tWC

tHZWE

tBW

NOTE 23

ADDRESS

DATA IO

BHE

/BLE

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CY62167E MoBL®

Document #: 001-15607 Rev. *A Page 9 of 12

Figure 6 shows BHE/BLE controlled, OE LOW write cycle waveforms.[22]

Figure 6. Write Cycle No. 4

Switching Waveforms (continued)

tHD

tSD

tSA

tHA

tAW

tWC

VALID DATA

tBW

tSCE

tPWE

NOTE 23

ADDRESS

DATA IO

BHE

/BLE

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CY62167E MoBL®

Document #: 001-15607 Rev. *A Page 10 of 12

Truth Table

CE1CE2WE OE BHE BLE Inputs Outputs Mode Power

H X X X X X High-Z Deselect/Power Down Standby (ISB)

X L X X X X High-Z Deselect/Power Down Standby (ISB)

X X X X H H High-Z Deselect/Power Down Standby (ISB)

L H H L L L Data Out (IO0–IO15) Read Active (ICC)

L H H L H L Data Out (IO0–IO7);

High-Z (IO8–IO15)

Read Active (ICC)

L H H L L H High-Z (IO0–IO7);

Data Out (IO8–IO15)

Read Active (ICC)

L H H H L H High-Z Output Disabled Active (ICC)

L H H H H L High-Z Output Disabled Active (ICC)

L H H H L L High-Z Output Disabled Active (ICC)

LHLXLLDataIn(IO

0–IO15) Write Active (ICC)

LHLXHLDataIn(IO

0–IO7);

High-Z (IO8–IO15)

Write Active (ICC)

LHLXLHHigh-Z(IO

0–IO7);

Data In (IO8–IO15)

Write Active (ICC)

Ordering Information

Speed

(ns) Ordering Code

Package

Diagram Package Type Operating

Range

45 CY62167ELL-45ZXI 51-85183 48-pin TSOP I (Pb-free) Industrial

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