Cypress Semiconductor CY62147DV18 Manuel utilisateur

4-Mb (256K x 16) Static RAM

CY62147DV18

MoBL2™

Cypress Semiconductor Corporation •3901 North First Street •San Jose, CA 95134 •408-943-2600

Document #: 38-05343 Rev. *B Revised February 26, 2004

Features

• Very high speed: 55 ns and 70 ns

• Wide voltage range: 1.65V – 2.25V

• Pin-compatible with CY62147CV18

• Ultra-low active power

— Typical active current: 1 mA @ f = 1 MHz

— Typical active current: 6 mA @ f = fmax

• Ultra low standby power

• Easy memory expansion with CE, and OE features

• Automatic power-down when deselected

• CMOS for optimum speed/power

• Packages offered 48-ball BGA

Functional Description[1]

The CY62147DV18 is a high-performance CMOS static RAM

organized as 256K words by 16 bits. This device features ad-

vanced circuit design to provide ultra-low active current. This

is ideal for providing More Battery Life™ (MoBL™) in portable

applications such as cellular telephones. The device also has

an automatic power-down feature that significantly reduces

power consumption. The device can also be put into standby

mode reducing power consumption by more than 99% when

deselected (CE HIGH or both BLE and BHE are HIGH). The

input/output pins (I/O0through I/O15) are placed in a high-im-

pedance state when: deselected (CE HIGH), outputs are dis-

abled (OE HIGH), both Byte High Enable and Byte Low Enable

are disabled (BHE, BLE HIGH), or during a write operation (CE

LOW and WE LOW).

Writing to the device is accomplished by asserting Chip En-

able (CE) and Write Enable (WE) inputs LOW. If Byte Low

Enable (BLE) is LOW, then data from I/O pins (I/O0through

I/O7), is written into the location specified on the address pins

(A0through A17). If Byte High Enable (BHE) is LOW, then data

from I/O pins (I/O8through I/O15) is written into the location

specified on the address pins (A0through A17).

Reading from the device is accomplished by asserting Chip

Enable (CE) and Output Enable (OE) LOW while forcing the

Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,

then data from the memory location specified by the address

pins will appear on I/O0to I/O7. If Byte High Enable (BHE) is

LOW, then data from memory will appear on I/O8to I/O15. See

the truth table for a complete description of read and write

modes.

The CY62147DV18 is available in a 48-ball FBGA package.

Note:

1. For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.

Logic Block Diagram

256K x 16

RAM Array I/O

– I/O

ROW DECODER

COLUMN DECODER

SENSE AMPS

DATA IN DRIVERS

I/O

– I/O

BLE

BHE

Power

Down

Circuit

[+] Feedback

CY62147DV18

MoBL2™

Document #: 38-05343 Rev. *B Page 2 of 11

Pin Configuration[2, 3, 4]

FBGA (Top View)

Notes:

2. NC pins are not internally connected on the die.

3. DNU pins have to be left floating or tied to Vss to ensure proper application.

4. Pins H1, G2, and H6 in the BGA package are address expansion pins for 8 Mb, 16 Mb, and 32 Mb, respectively.

A11

A10

A3CE

I/O

Vss

I/O

BHE

A17

BLE

I/O

5I/O

I/O

A15

A14

A13

NC NC

A16

DNU

Vcc

[+] Feedback

CY62147DV18

MoBL2™

Document #: 38-05343 Rev. *B Page 3 of 11

Maximum Ratings

(Above which the useful life may be impaired. For user guide-

lines, not tested.)

Storage Temperature ................................–65°C to + 150°C

Ambient Temperature with

Power Applied............................................–55°C to + 125°C

Supply Voltage to Ground

Potential......................................–0.2V to + VCC(MAX) + 0.2V

DC Voltage Applied to Outputs

in High Z State[5,6]..........................–0.2V to VCC(MAX) + 0.2V

DC Input Voltage[5,6] .....................–0.2V to VCC (MAX) + 0.2V

Output Current into Outputs (LOW)............................. 20 mA

Static Discharge Voltage.......................................... > 2001V

(per MIL-STD-883, Method 3015)

Latch-up Current.....................................................> 200 mA

Operating Range

Device Range

Ambient

Temperature

(TA) VCC[7]

CY62147DV18L Industrial –40°Cto +85°C 1.65V to 2.25V

CY62147DV18LL

Product Portfolio

Product

VCC Range (V) Speed

(ns)

Power Dissipation

Operating ICC (mA)

Standby ISB2 (µA)f = 1MHz f = fmax

Min. Typ.[7] Max. Typ.[7] Max. Typ.[7] Max. Typ.[7] Max.

CY62147DV18L 1.65 1.8 2.25 55 1.0 2.0 615 0.5 18

CY62147DV18LL 10 12

CY62147DV18L 1.65 1.8 2.25 70 1.0 2.0 615 0.5 18

CY62147DV18LL 10 12

Electrical Characteristics Over the Operating Range

Parameter Description Test Conditions

CY62147DV18-55 CY62147DV18-70

UnitMin. Typ.[7] Max. Min. Typ.[7] Max.

VOH Output HIGH

Voltage IOH = –0.1 mA VCC = 1.65V 1.4 1.4 V

VOL Output LOW

Voltage IOL = 0.1 mA VCC = 1.65V 0.2 0.2 V

VIH Input HIGH

Voltage VCC =1.65V to 2.25V 1.4 VCC + 0.2V 1.4 VCC + 0.2V V

VIL Input LOW

Voltage VCC =1.65V to 2.25V –0.2 0.4 –0.2 0.4 V

IIX Input Leakage

Current GND <VI< VCC –1 +1 –1 +1 µA

IOZ Output Leakage

Current GND <VO <VCC, Output Disabled –1 +1 –1 +1 µA

ICC VCC Operating

Supply Current f = fMAX = 1/tRC VCC(max) = 1.95V

IOUT = 0 mA

CMOS levels

L 6 12 612 mA

LL 8 8

VCC(max) = 2.25V

IOUT = 0 mA

CMOS levels

L 6 15 615 mA

LL 10 10

f = 1 MHz VCC(max) = 1.95V L 1 1.5 11.5 mA

VCC(max) = 2.25V L 1 2 1 2 mA

Notes:

5. VIL(min.) = –2.0V for pulse durations less than 20 ns.

6. VIH(max)=VCC+0.75V for pulse durations less than 20ns.

7. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ.), TA= 25°C.

[+] Feedback

CY62147DV18

MoBL2™

Document #: 38-05343 Rev. *B Page 4 of 11

ISB1 Automatic CE

Power-Down

Current —

CMOS Inputs

CE > VCC−0.2V,

VIN>VCC–0.2V,

VIN<0.2V); f = fMAX

(Address and Data

Only), f = 0 (OE,

WE,BHE and BLE)

VCC(max)=1.95V L0.5 12 0.5 12 µA

LL 8 8

VCC(max)=2.25V L0.5 18 0.5 18

LL 12 12

ISB2 Automatic CE

Power-down

Current —

CMOS Inputs

CE > VCC – 0.2V,

VIN > VCC – 0.2V or

VIN < 0.2V, f = 0

VCC(max)=1.95V L0.5 12 0.5 12 µA

LL 8 8

VCC(max)=2.25V L0.5 18 0.5 18

LL 12 12

Capacitance for all Packages[8]

Parameter Description Test Conditions Max. Unit

CIN Input Capacitance TA= 25°C, f = 1 MHz,

VCC = VCC(typ)

10 pF

COUT Output Capacitance 10 pF

Thermal Resistance

Parameter Description Test Conditions BGA Unit

ΘJA Thermal Resistance

(Junction to Ambient)[8] Still Air, soldered on a 3 × 4.5 inch, four-layer printed circuit

board

75 °C/W

ΘJC Thermal Resistance

(Junction to Case)[8] 10 °C/W

AC Test Loads and Waveforms

Parameters 1.80V Unit

R1 13500 Ω

R2 10800 Ω

RTH 6000 Ω

VTH 0.80 V

Data Retention Characteristics (Over the Operating Range)

Parameter Description Conditions Min. Typ.[7] Max. Unit

VDR VCC for Data Retention 1.0 V

ICCDR Data Retention Current VCC= 1.0V CE > VCC – 0.2V,

VIN > VCC – 0.2V or VIN < 0.2V

L 6 µA

LL 4

tCDR[8] Chip Deselect to Data Retention Time 0ns

tROperation Recovery Time tRC ns

Notes:

8. Tested initially and after any design or process changes that may affect these parameters.

Electrical Characteristics Over the Operating Range (continued)

Parameter Description Test Conditions

CY62147DV18-55 CY62147DV18-70

UnitMin. Typ.[7] Max. Min. Typ.[7] Max.

VCCVCC

OUTPUT

30 pF

INCLUDING

JIG AND

SCOPE

GND

90%

10% 90%

10%

Rise Time = 1 V/ns Fall Time = 1 V/ns

OUTPUT V

Equivalent to: THÉVENIN EQUIVALENT

ALL INPUT PULSES

RTH

[+] Feedback

CY62147DV18

MoBL2™

Document #: 38-05343 Rev. *B Page 5 of 11

wqewqewq

Data Retention Waveform[9]

Switching Characteristics Over the Operating Range [10.]

Parameter Description

55 ns 70 ns

UnitMin. Max. Min. Max.

Read Cycle

tRC Read Cycle Time 55 70 ns

tAA Address to Data Valid 55 70 ns

tOHA Data Hold from Address Change 10 10 ns

tACE CE LOW to Data Valid 55 70 ns

tDOE OE LOW to Data Valid 25 35 ns

tLZOE OE LOW to LOW Z[11]5 5 ns

tHZOE OE HIGH to High Z[11, 12]16 16 ns

tLZCE CE LOW to Low Z[11]10 10 ns

tHZCE CE HIGH to High Z[11, 12]20 25 ns

tPU CE LOW to Power-Up 0 0 ns

tPD CE HIGH to Power-Down 55 70 ns

tDBE BLE / BHE LOW to Data Valid 55 70 ns

tLZBE BLE / BHE LOW to Low Z[11]10 10 ns

tHZBE BLE / BHE HIGH to HIGH Z[11, 12]20 25 ns

Write Cycle[13]

tWC Write Cycle Time 55 70 ns

tSCE CE LOW to Write End 40 50 ns

tAW Address Set-up to Write End 40 50 ns

tHA Address Hold from Write End 0 0 ns

tSA Address Set-up to Write Start 0 0 ns

tPWE WE Pulse Width 40 45 ns

tBW BLE / BHE LOW to Write End 40 50 ns

tSD Data Set-Up to Write End 25 30 ns

tHD Data Hold from Write End 0 0 ns

tHZWE WE LOW to High-Z[11, 12]20 25 ns

tLZWE WE HIGH to Low-Z[11]10 10 ns

Notes:

9. BHE.BLE is the AND of both BHE and BLE. Chip can be deselected by either disabling the chip enable signal or by disabling both BHE and BLE.

10. Test conditions for all parameters other than three-state parameters assume signal transition time of 1V/ns or less, timing reference levels of VCC(typ)/2, input

pulse levels of 0 to VCC(typ.), and output loading of the specified IOL/IOH as shown in the “AC Test Loads and Waveforms” section.

11. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZBE is less than tLZBE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any

given device.

12. tHZOE, tHZCE, tHZBE, and tHZWE transitions are measured when the outputs enter a high impedence state.

13. The internal Write time of the memory is defined by the overlap of WE, CE = VIL, BHE and/or BLE = VIL. All signals must be ACTIVE to initiate a write and any

of these signals can terminate a write by going INACTIVE. The data input set-up and hold timing should be referenced to the edge of the signal that terminates

the write.

VCC(min)

tCDR

VDR >1.0 V

DATA RETENTION MODE

VCC

CE or

BHE.BLE

[+] Feedback

CY62147DV18

MoBL2™

Document #: 38-05343 Rev. *B Page 6 of 11

Switching Waveforms

Notes:

14. The device is continuously selected. OE, CE = VIL, BHE and/or BLE = VIL.

15. WE is HIGH for read cycle.

16. Address valid prior to or coincident with CE and BHE, BLE transition LOW.

ADDRESS

DATA OUT PREVIOUS DATA VALID DATA VALID

tRC

tAA

tOHA

Read Cycle 1 (Address Transition Controlled)[14, 15]

Read Cycle No. 2 (OE Controlled) [15, 16]

50%

DATA VALID

ACE

LZBE

LZCE

DATA OUT HIGH IMPEDANCE IMPEDANCE

HZOE

HZCE

HIGH

SUPPLY

CURRENT

HZBE

BHE/BLE t

LZOE

ADDRESS

DBE

DOE

[+] Feedback

CY62147DV18

MoBL2™

Document #: 38-05343 Rev. *B Page 7 of 11

Notes:

17. Data I/O is high impedance if OE = VIH.

18. If CE goes HIGH simultaneously with WE = VIH, the output remains in a high-impedance state.

19. During this period, the I/Os are in output state and input signals should not be applied.

Switching Waveforms (continued)

tHD

tSD

tPWE

tSA

tHA

tAW

tWC

DATA I/O

ADDRESS

tHZOE

DATAIN

NOTE

Write Cycle No. 1 (WE Controlled)[13, 17, 18]

BHE/BLE tBW

tSCE

tHD

tSD

tPWE

tHA

tAW

tSCE

tWC

tHZOE

DATAIN

ADDRESS

DATA I/O

NOTE 19

Write Cycle No. 2 (CE Controlled)

BHE/BLE tBW

[13, 17, 18]

tSA

[+] Feedback

CY62147DV18

MoBL2™

Document #: 38-05343 Rev. *B Page 8 of 11

Switching Waveforms (continued)

DATAIN

tHD

tSD

tLZWE

tPWE

tSA

tHA

tAW

tSCE

tWC

tHZWE

ADDRESS

DATAI/O NOTE 19

Write Cycle No. 3 (WE Controlled, OE LOW)

tBW

BHE/BLE

[18]

DATA I/O

ADDRESS

tWC

DATA

Write Cycle No. 4 (BHE/BLE Controlled, OE LOW) [18]

NOTE 19

BHE/BLE

tSCE

PWE

tHZWE

tLZWE

[+] Feedback

CY62147DV18

MoBL2™

Document #: 38-05343 Rev. *B Page 9 of 11

Truth Table

CE WE OE BHE BLE Inputs/Outputs Mode Power

H X X X X High Z Deselect/Power-Down Standby (ISB)

X X X H H High Z Deselect/Power-Down Standby (ISB)

L H L L L Data Out (I/OO–I/O15)Read Active (ICC)

L H L H L Data Out (I/OO–I/O7);

I/O8–I/O15 in High Z

Read (Lower byte only) Active (ICC)

L H L L H Data Out (I/O8–I/O15);

I/O0–I/O7 in High Z

Read (Higher byte only) Active (ICC)

L H H L L High Z Output Disabled Active (ICC)

L H H H L High Z Output Disabled Active (ICC)

L H H L H High Z Output Disabled Active (ICC)

L L X L L Data In (I/OO–I/O15)Write Active (ICC)

L L X H L Data In (I/OO–I/O7);

I/O8–I/O15 in High Z Write (Lower byte only) Active (ICC)

L L X L H Data In (I/O8–I/O15);

I/O0–I/O7 in High Z

Write (Higher byte only) Active (ICC)

Ordering Information

Speed

(ns) Ordering Code

Package

Name Package Type

Operating

Range

55 CY62147DV18L-55BVI BV48A 48-ball Fine Pitch BGA (6 mm × 8mm × 1 mm) Industrial

CY62147DV18LL-55BVI

70 CY62147DV18L-70BVI BV48A 48-ball Fine Pitch BGA (6 mm × 8mm × 1 mm) Industrial

CY62147DV18LL-70BVI

55 CY62147DV18L-55BVXI BV48A 48-ball Fine Pitch BGA (6 mm × 8mm × 1 mm) Pb-free Industrial

CY62147DV18LL-55BVXI

70 CY62147DV18L-70BVXI BV48A 48-ball Fine Pitch BGA (6 mm × 8mm × 1 mm) Pb-free Industrial

CY62147DV18LL-70BVXI

[+] Feedback

CY62147DV18

MoBL2™

Document #: 38-05343 Rev. *B Page 10 of 11

of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize

its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress

Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges.

MoBL is a registered trademark, and MoBL2 and More Battery Life are trademarks, of Cypress Semiconductor. All product and

company names mentioned in this document may be the trademarks of their respective holders.

Package Diagram

48-Lead VFBGA (6 x 8 x 1 mm) BV48A

51-85150-*B

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