NXP Semiconductors UM11620 Manuel utilisateur
UM11620
FRDMGD3160XM3EVM half-bridge evaluation board
Rev. 1 — 10 June 2021 User guide
Document information
Information Content
Keywords gate driver, half-bridge, evaluation board, XM3, GD3160
Abstract The FRDMGD3160XM3EVM is a functional power module half-bridge kit.
This kit can be used as a foundation on which to develop and analyze the
GD3160 gate driver for ASIL D compliant high voltage, high-power traction
motor inverter for electric vehicle applications. This manual is a guide for
describing the various features in using the kit.
NXP Semiconductors UM11620
FRDMGD3160XM3EVM half-bridge evaluation board
Revision Date Description
1 20210610 initial version
Revision history
UM11620 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2021. All rights reserved.
User guide Rev. 1 — 10 June 2021
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NXP Semiconductors UM11620
FRDMGD3160XM3EVM half-bridge evaluation board
1 Important notice
NXP provides the enclosed product(s) under the following conditions:
This evaluation kit is intended for use of ENGINEERING DEVELOPMENT OR
EVALUATION PURPOSES ONLY. It is provided as a sample IC pre-soldered to a printed
circuit board to make it easier to access inputs, outputs, and supply terminals. This
evaluation board may be used with any development system or other source of I/O
signals by simply connecting it to the host MCU or computer board via off-the-shelf
cables. This evaluation board is not a Reference Design and is not intended to represent
a final design recommendation for any particular application. Final device in an
application will be heavily dependent on proper printed circuit board layout and heat
sinking design as well as attention to supply filtering, transient suppression, and I/O
signal quality.
The goods provided may not be complete in terms of required design, marketing, and
or manufacturing related protective considerations, including product safety measures
typically found in the end product incorporating the goods. Due to the open construction
of the product, it is the user's responsibility to take any and all appropriate precautions
with regard to electrostatic discharge. In order to minimize risks associated with the
customers applications, adequate design and operating safeguards must be provided
by the customer to minimize inherent or procedural hazards. For any safety concerns,
contact NXP sales and technical support services.
UM11620 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2021. All rights reserved.
User guide Rev. 1 — 10 June 2021
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NXP Semiconductors UM11620
FRDMGD3160XM3EVM half-bridge evaluation board
2 FRDMGD3160XM3EVM
Figure 1. FRDMGD3160XM3EVM
UM11620 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2021. All rights reserved.
User guide Rev. 1 — 10 June 2021
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NXP Semiconductors UM11620
FRDMGD3160XM3EVM half-bridge evaluation board
3 Getting started
The NXP analog product development boards provide an easy-to-use platform for
evaluating NXP products. The boards support a range of analog, mixed-signal, and
power solutions. They incorporate monolithic integrated circuits and system-in-package
devices that use proven high-volume technology. NXP products offer longer battery life, a
smaller form factor, reduced component counts, lower cost, and improved performance in
powering state-of-the-art systems.
The tool summary page for FRDMGD3160XM3EVM is at http://www.nxp.com/
FRDMGD3160XM3EVM. The overview tab provides an overview of the device, product
features, a description of the kit contents, a list of (and links to) supported devices, a list
of (and links to) any related products, and a Get Started section.
The Get Started section provides links to everything needed to start using the
device and contains the most relevant, current information applicable to the
FRDMGD3160XM3EVM.
1. Go to http://www.nxp.com/FRDMGD3160XM3EVM.
2. On the Overview tab, locate the Jump To navigation feature on the left side of the
window.
3. Select the Get Started link, review each entry, and download an entry by clicking the
title.
4. After reviewing the Overview tab, visit the other product-related tabs for additional
information:
• Documentation: download current documentation
• Software & Tools: download current hardware and software tools
• Buy/Parametrics: purchase the product and view the product parametrics
After downloading files, review each file, including the user guide, which includes setup
instructions. If applicable, the bill of materials (BOM) and supporting schematics are also
available for download in the Get Started section of the Overview tab.
3.1 Kit contents/packing list
The FRDMGD3160XM3EVM kit contents include:
•Assembled and tested FRDMGD3160XM3EVM board in an anti-static bag
•3.3 V to 5.0 V translator board (KITGD3160TREVB) connected to FRDM-KL25Z
•USB cable, type A male/type mini B male, 3 ft
•Quick start guide
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NXP Semiconductors UM11620
FRDMGD3160XM3EVM half-bridge evaluation board
3.2 Required equipment
To use this kit, you need:
•Compatible XM3 SiC MOSFET module (CAB450M12XM3)
•DC link capacitor compatible with the XM3 module
•30 µH to 50 µH, high current air core inductor for double pulse testing
•HV power supply with protection shield and hearing protection
•25 V, 1.0 A DC power supply
•500 MHz 2.5 GS/s 4-channel oscilloscope
•Rogowski current probe or shunt resistor for measuring source current
•Isolated high-voltage and low-voltage differential probes
•Digital voltmeter
3.3 System requirements
The kit requires the following to function properly with the software:
•Windows 8 or higher operating system
4 Getting to know the hardware
4.1 Overview
The FRDMGD3160XM3EVM is a half-bridge evaluation kit populated with two GD3160
single channel gate drive devices. The kit includes the Freedom KL25Z microcontroller
hardware for interfacing a PC installed with FlexGUI software for communication to the
serial peripheral interface (SPI) registers on the GD3160 gate drive devices in either
daisy chain or standalone configuration.
The KITGD3160TREVB translator board is used to translate 3.3 V signals to 5.0 V
signals between the MCU and GD3160 gate drivers. The evaluation kit can be connected
to a compatible insulated gate bipolar transistor (IGBT) or SiC module for half-bridge
evaluations and applications development.
4.2 Board features
•Capability to connect to CAB450M12XM3 form factor module for half-bridge
evaluations
•Negative VEE gate low drive level (−3.7 V DC)
•VCCREG regulated high gate drive level (+15 V to +21 V DC programmable)
•Jumper configurable for disabling dead time fault protection when short-circuit testing
•Easy access power, ground, and signal test points
•Easy to install and use FlexGUI for interfacing via SPI through PC; software includes
double pulse and short-circuit testing capability
•DC link bus voltage monitor on low-side driver via AMUXIN and AOUT
•Negative temperature coefficient (NTC) connection and configurable for monitoring
module temperature
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User guide Rev. 1 — 10 June 2021
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NXP Semiconductors UM11620
FRDMGD3160XM3EVM half-bridge evaluation board
4.3 Device features
Device Description Features
GD3160 The GD3160 is an
advanced single
channel gate driver for
IGBT and SiC.
•Compatible with current sense and temp sense
IGBTs
•DESAT detection capability for detecting VCE
desaturation condition
•Fast short-circuit protection for IGBTs with current
sense feedback
•Compliant with automotive safety integrity level
(ASIL) C/D ISO 26262 functional safety requirements
•SPI interface for safety monitoring, programmability,
and flexibility
•Integrated galvanic signal isolation
•Integrated gate drive power stage capable of 15 A
peak source and sink
•Interrupt pin for fast response to faults
•Compatible with negative gate supply
•Compatible with 200 V to 1700 V IGBT and SiC
MOSFET, power range > 125 kW
Table 1. Device features
4.4 Board description
The FRDMGD3160XM3EVM is a half-bridge evaluation board populated with two
GD3160 single channel IGBT or SiC gate drive devices. The board supports connection
to an FRDM-KL25Z microcontroller for SPI communication configuration programming
and monitoring. The board includes DESAT circuitry for short-circuit detection and
implementation of GD3160 shutdown protection capabilities.
The evaluation board is designed to connect to an XM3 module for evaluation of the
GD3160 performance and capabilities.
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User guide Rev. 1 — 10 June 2021
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NXP Semiconductors UM11620
FRDMGD3160XM3EVM half-bridge evaluation board
Figure 2. Connecting FRDM-KL25Z, GD31xx half-bridge EVB and translator board
4.4.1 Low-voltage logic and control connector
Low-voltage domain is 15 V VSUP domain that interfaces with the MCU and GD3160
control registers through the 24-pin connector interface.
Low-side driver and high-side driver domains are driver control interfaces to XM3 SiC
module single phase connections and test points.
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NXP Semiconductors UM11620
FRDMGD3160XM3EVM half-bridge evaluation board
Figure 3. Evaluation board voltage and interface domains
Pin Name Function
1 AOUTL analog output duty cycle encoded signal (low side) for reading temperature via
TSENSEA or voltage via AMUXIN
2 n.c. not connected
3 CSBL chip select bar (low side)
4 n.c. not connected
5 PWML pulse width modulation (PWM) input (low side)
6 INTBL interrupt bar (low side)
7 MOSIL master out slave in (low side)
8 SCLK serial clock input
9 MISOL master in slave out (low side)
10 EN_PS MCU control of flyback power supply
11 FSSTATEL fail-safe state (low side)
12 GND ground
13 FSENB fail-safe enable (high side and low side)
14 MISOH master in slave out (high side)
Table 2. Low-voltage domain 24-pin connector definitions
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NXP Semiconductors UM11620
FRDMGD3160XM3EVM half-bridge evaluation board
Pin Name Function
15 INTAL fault reporting and real time VCE and VGE monitoring (low side)
16 MOSIH master out slave in (high side)
17 INTAH fault reporting and real time VCE and VGE monitoring (high side)
18 CSBH chip select bar (high side)
19 LED_PWR USB 3.3 V power for INTB LEDs (high side and low side)
20 AOUTH duty cycle encoded signal (high side)
21 PWMH PWM input (high side)
22 FSSTATEH fail-safe state (high side)
23 GND ground
24 INTBH interrupt bar (high side)
Table 2. Low-voltage domain 24-pin connector definitions...continued
4.4.2 Test point definitions
All test points are clearly marked on the evaluation board. Figure 4 shows the location of
various test points.
Figure 4. Key test point locations
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