Cypress Semiconductor CY7C027AV Manuel utilisateur

CY7C027V/027VN/027AV/028V

CY7C037V/037AV/038V

3.3V 32K/64K x 16/18 Dual-Port Static

RAM

Cypress Semiconductor Corporation • 198 Champion Court • San Jose

CA 95134-1709 • 408-943-2600

Document #: 38-06078 Rev. *B Revised December 09, 2008

Features

■

True Dual-Ported memory cells which allow

simultaneous access of the same memory location

■

32K x 16 organization (CY7C027V/027VN/027AV

[1]

)

■

64K x 16 organization (CY7C028V)

■

32K x 18 organization (CY7C037V/037AV

[2]

)

■

64K x 18 organization (CY7C038V)

■

0.35 micron CMOS for optimum speed and power

■

High speed access: 15, 20, and 25 ns

■

Low operating power

■

Active: I

= 115 mA (typical)

■

Standby: I

SB3

= 10 μA (typical)

■

Fully asynchronous operation

■

Automatic power down

■

Expandable data bus to 32/36 bits or more using Master/Slave

chip select when using more than one device

■

On-chip arbitration logic

■

Semaphores included to permit software handshaking

between ports

■

INT flag for port-to-port communication

■

Separate upper-byte and lower-byte control

■

Dual chip enables

■

Pin select for Master or Slave

■

Commercial and Industrial temperature ranges

■

100-pin Pb-free TQFP and 100-pin TQFP

Notes

1. CY7C027V, CY7C027VN and CY7C027AV are functionally identical.

2. CY7C037V and CY7C037AV are functionally identical.

3. I/O

–I/O

for x16 devices; I/O

–I/O

for x18 devices.

4. I/O

–I/O

for x16 devices; I/O

–I/O

for x18 devices.

5. A

–A

for 32K; A

–A

for 64K devices.

6. BUSY is an output in master mode and an input in slave mode.

R/W

I/O

8/9L

–I/O

15/17L

I/O

Control

Address

Decode

–A

14/15L

R/W

BUSY

I/O

Control

Interrupt

Semaphore

Arbitration

SEM

INT

M/S

I/O

–I/O

7/8L

R/W

I/O

8/9L

–I/O

15/17R

I/O

–I/O

7/8R

Logic Block Diagram

–A

14/15L

True Dual-Ported

RAM Array

–A

14/15R

R/W

BUSY

SEM

INT

Address

Decode A

–A

14/15R

[3] [3]

[4] [4]

[5] [5]

[6] [6]

[5] [5]

15/16

8/9

15/16

8/9

15/16 15/16

[+] Feedback

CY7C027V/027VN/027AV/028V

CY7C037V/037AV/038V

Document #: 38-06078 Rev. *B Page 2 of 18

Pin Configurations

Figure 1. 100-Pin TQFP (Top View)

92 91 90 848587 868889 83 82 81 7678 77798093949596979899100

A9R

A10R

A11R

A12R

A13R

A14R

UBR

LBR

CE1R

SEMR

OER

GND

A15R

GND

R/WR

GND

I/O15R

I/O14R

I/O13R

I/O12R

I/O11R

I/O10R

CE0R

CY7C027V/027VN/027AV (32K x 16)

A9L

A10L

A11L

A12L

A13L

A14L

UBL

LBL

CE1L

SEML

OEL

GND

A15L

VCC

R/WL

GND

I/O15L

I/O14L

I/O13L

I/O12L

I/O11L

I/O10L

CE0L

A8L

A7L

A6L

A5L

A4L

A3L

INTL

A1L

GND

M/S

A0R

A1R

A0L

A2L

BUSYR

INTR

A2R

A3R

A4R

A5R

A6R

A7R

A8R

BUSYL

34 35 36 424139 403837 43 44 45 5048 494746

I/O9R

I/O8R

I/O7R

VCC

I/O6R

I/01R

I/O4R

I/O2R

GND

I/O0L

I/O2L

I/O3L

I/O3R

I/O5R

I/O1L

GND

I/O4L

I/O5L

I/O6L

I/O7L

VCC

I/O8L

I/O9L

I/O0R

3332313029282726

CY7C028V (64K x 16)

[1] [1]

Note

1. This pin is NC for CY7C027V/027VN/027AV.

[+] Feedback

CY7C027V/027VN/027AV/028V

CY7C037V/037AV/038V

Document #: 38-06078 Rev. *B Page 3 of 18

Pin Configurations

(continued)

Figure 2. 100-Pin TQFP (Top View)

92 91 90 848587 868889 83 82 81 7678 77798093949596979899100

A8R

A9R

A10R

A11R

A12R

A13R

CE0R

A15R

UBR

SEMR

R/WR

GND

I/O17R

LBR

A14R

GND

OER

GND

I/O16R

I/O15R

I/O14R

I/O13R

I/O12R

I/O11R

CE1R

CY7C037V/037AV (32K x 18)

A9L

A10L

A11L

A12L

A13L

A14L

CE1L

LBL

CE0L

R/WL

OEL

I/O17L

I/O16L

UBL

A15L

VCC

GND

I/O15L

I/O14L

I/O13L

I/O12L

I/O11L

I/O10L

SEML

A8L

A7L

A6L

A5L

A4L

A3L

BUSYL

A1L

INTL

GND

VCC

INTR

A0R

A0L

A2L

M/S

BUSYR

A1R

A2R

A3R

A4R

A5R

A6R

A7R

GND

34 35 36 424139 403837 43 44 45 5048 494746

I/O10R

I/O9R

I/O8R

I/O7R

VCC

I/O6R

I/01R

I/O4R

I/O2R

GND

I/O0L

I/O2L

I/O3L

I/O3R

I/O5R

I/O1L

GND

I/O4L

I/O5L

I/O6L

I/O7L

VCC

I/O8L

I/O9L

I/O0R

3332313029282726

CY7C038V (64K x 18)

[2]

Selection Guide

Parameter -15 -20 -25 Unit

Maximum Access Time 15 20 25 ns

Typical Operating Current 125 120 115 mA

Typical Standby Current for I

SB1

(Both ports TTL level) 35 35 30 mA

Typical Standby Current for I

SB3

(Both ports CMOS level) 10 μA10μA10μAμA

Note

2. This pin is NC for CY7C037V/037AV.

[+] Feedback

CY7C027V/027VN/027AV/028V

CY7C037V/037AV/038V

Document #: 38-06078 Rev. *B Page 4 of 18

Architecture

The CY7C027V/027VN/027AV/028V and

CY7037V/037AV/038V consist of an array of 32K and 64K words

of 16 and 18 bits each of dual-port RAM cells, I/O and address

lines, and control signals (CE, OE, R/W). These control pins permit

independent access for reads or writes to any location in memory. To

handle simultaneous writes/reads to the same location, a BUSY pin is

provided on each port. Two interrupt (INT) pins can be utilized for

port-to-port communication. Two semaphore (SEM) control pins are

used for allocating shared resources. With the M/S pin, the devices can

function as a master (BUSY pins are outputs) or as a slave (BUSY pins

are inputs). The devices also have an automatic power down feature

controlled by CE. Each port is provided with its own output enable

control (OE),which allows data to be read from the device.

Functional Description

The CY7C027V/027VN/027AV/028V and

CY7037V/037AV/038V are low power CMOS 32K, 64K x 16/18

dual-port static RAMs. Various arbitration schemes are included

on the devices to handle situations when multiple processors

access the same piece of data. Two ports are provided, permit-

ting independent, asynchronous access for reads and writes to

any location in memory. The devices can be utilized as

stand-alone 16/18-bit dual-port static RAMs or multiple devices

can be combined to function as a 32/36-bit or wider master/slave

dual-port static RAM. An M/S pin is provided for implementing

32/36-bit or wider memory applications without the need for sep-

arate master and slave devices or additional discrete logic. Ap-

plication areas include interprocessor/multiprocessor designs,

communications status buffering, and dual-port video/graphics

memory.

Each port has independent control pins: chip enable (CE), read

or write enable (R/W),andoutputenable(OE).Twoflagsareprovided

on each port (BUSY and INT). BUSY signals that the port is trying to

access the same location currently being accessed by the other port.

The interrupt flag (INT) permits communication between ports or

systems by means of a mail box. The semaphores are used to pass a

flag, or token, from one port to the other to indicate that a shared

resource is in use. The semaphore logic is comprised of eight shared

latches. Only one side can control the latch (semaphore) at any time.

Control of a semaphore indicates that a shared resource is in use. An

automatic powerdown feature iscontrolled independently on each port

by a chip select (CE) pin.

The CY7C027V/027VN/027AV/028V and

CY7037V/037AV/038V are available in 100-pin Thin Quad Plas-

tic Flatpacks (TQFP).

Write Operation

Data must be set up for a duration of t

before the rising edge of

R/W to guarantee a valid write. A write operation is controlled by either

theR/Wpin(seeFigure 7)ortheCEpin(seeFigure 8).Requiredinputs

for non-contention operations are summarized in Table 1.

If a location is being written to by one port and the opposite port

attempts to read that location, a port-to-port flowthrough delay

must occur before the data is read on the output; otherwise the

data read is not deterministic. Data is valid on the port t

DDD

after

the data is presented on the other port.

Read Operation

When reading the device, the user must assert both the OE and

CE pins. Data is available t

ACE

after CE or t

DOE

after OE is asserted. If

the userwishes toaccessa semaphoreflag,thenthe SEM pinmustbe

asserted instead of the CE pin, and OE must also be asserted.

Interrupts

The upper two memory locations may be used for message

passing. The highest memory location (7FFF for the

CY7C027V/027VN/027AV/37V, FFFF for the CY7C028V/38V) is

the mailbox for the right port and the second-highest memory

location (7FFE for the CY7C027V/027VN/027AV/037V/037AV,

FFFE for the CY7C028V/38V) is the mailbox for the left port.

When one port writes to the other port’s mailbox, an interrupt is

Pin Definitions

Left Port Right Port Description

, CE

Chip Enable (CE is LOW when CE

≤V

and CE

≥ V

)

R/W

Read/Write Enable

Output Enable

–A

15L

–A

15R

Address (A

–A

for 32K; A

–A

for 64K devices)

I/O

–I/O

17L

I/O

–I/O

17R

Data Bus Input/Output (I/O

–I/O

for x16 devices; I/O

–I/O

for x18)

SEM

Semaphore Enable

Upper Byte Select (I/O

–I/O

for x16 devices; I/O

–I/O

for x18 devices)

Lower Byte Select (I/O

–I/O

for x16 devices; I/O

–I/O

for x18 devices)

INT

Interrupt Flag

BUSY

Busy Flag

M/S Master or Slave Select

Power

GND Ground

NC No Connect

[+] Feedback

CY7C027V/027VN/027AV/028V

CY7C037V/037AV/038V

Document #: 38-06078 Rev. *B Page 5 of 18

generated to the owner. The interrupt is reset when the owner

reads the contents of the mailbox. The message is user defined.

Each port can read the other port’s mailbox without resetting the

interrupt. The active state of the busy signal (to a port) prevents

the port from setting the interrupt to the winning port. Also, an

active busy to a port prevents that port from reading its own

mailbox and, thus, resetting the interrupt to it.

If an application does not require message passing, do not

connect the interrupt pin to the processor’s interrupt request

input pin.

The operation of the interrupts and their interaction with Busy are

summarized in Table 2.

Busy

The CY7C027V/027VN/027AV/028V and

CY7037V/037AV/038V provide on-chip arbitration to resolve

simultaneous memory location access (contention). If both ports’

CEsareassertedandanaddressmatchoccurswithint

ofeachother,

the busy logic determines which port has access. If t

is violated, one

port definitely gains permission to the location, but it is not predictable

whichportgetsthatpermission.BUSYisassertedt

BLA

afteranaddress

match or t

BLC

after CE is taken LOW.

Master/Slave

A M/S pin is provided to expand the word width by configuring the

device as either a master or a slave. The BUSY output of the master is

connected to the BUSY input of the slave. This allows the device to

interface to a master device with no external components. Writing to

slave devices must be delayed until after the BUSY input has settled

BLC

or t

BLA

), otherwise, the slave chip may begin a write cycle during

a contention situation. When tied HIGH, the M/S pin allows the device

tobeusedasamasterand,therefore,theBUSYlineisanoutput.BUSY

can then be used to send the arbitration outcome to a slave.

Semaphore Operation

The CY7C027V/027VN/027AV/028V and

CY7037V/037AV/038V provide eight semaphore latches, which

are separate from the dual-port memory locations. Semaphores

are used to reserve resources that are shared between the two

ports.The state of the semaphore indicates that a resource is in

use. For example, if the left port wants to request a given

resource,it setsalatchbywritingazeroto asemaphorelocation.

The left port then verifies its success in setting the latch by

reading it. After writing to the semaphore, SEM or OE must be

deasserted for t

SOP

before attempting to read the semaphore. The

semaphore value is availablet

SWRD

+ t

DOE

after the rising edge of the

semaphore write. If the left port was successful (reads a zero), it

assumes control of the shared resource, otherwise (reads a one) it

assumestherightporthascontrolandcontinuesto pollthesemaphore.

When the right side has relinquished control of the semaphore (by

writing a one), the left side succeeds in gaining control of the

semaphore. If the left side no longer requires the semaphore, a one is

written to cancel its request.

Semaphores are accessed by asserting SEMLOW. The SEM pin

functions as a chip select for the semaphore latches (CE must remain

HIGHduringSEMLOW).A

0–2

representsthesemaphoreaddress.OE

and R/W are used in the same manner as a normal memory access.

When writing or reading a semaphore, the other address pins have no

effect.

When writing to the semaphore, only I/O

isused.Ifazeroiswritten

to the left port of an available semaphore, a one appears at the same

semaphoreaddressontheright port.Thatsemaphorecannowonlybe

modified by the side showing zero (the left port in this case). If the left

port now relinquishes control by writing a one to the semaphore, the

semaphore is set to one for both sides. However, if the right port had

requestedthesemaphore(writtenazero)while theleftporthadcontrol,

theright portwouldimmediatelyown thesemaphoreas soonas theleft

port released it. Table 3 shows sample semaphore operations.

When reading a semaphore, all sixteen/eighteen data lines

output the semaphore value. The read value is latched in an

output register to prevent the semaphore from changing state

during a write from the other port. If both ports attempt to access

the semaphore within t

SPS

of each other, the semaphore is definitely

obtained by one side or the other, but there is no guarantee which side

controls the semaphore.

[+] Feedback

CY7C027V/027VN/027AV/028V

CY7C037V/037AV/038V

Document #: 38-06078 Rev. *B Page 6 of 18

Maximum Ratings

Exceeding maximum ratings may shorten the useful life of the

device. User guidelines are not tested.

Storage Temperature .................................–65

C to +150

Ambient Temperature with

Power Applied ............................................–55

C to +125

Supply Voltage to Ground Potential................–0.5V to +4.6V

DC Voltage Applied to

Outputs in High-Z State...........................–0.5V to V

+0.5V

DC Input Voltage

[2]

..................................–0.5V to V

+0.5V

Output Current into Outputs (LOW).............................20 mA

Static Discharge Voltage.......................................... > 1100V

Latch-up Current.................................................... > 200 mA

Operating Range

Range Ambient

Temperature V

Commercial 0

C to +70

C 3.3V ±300 mV

Industrial

[3]

–40

C to +85

C 3.3V ±300 mV

Electrical Characteristics

Over the Operating Range

Parameter Description CY7C027V/027VN/027AV/028V/CY7C037V/037AV/038V Unit-15 -20 -25

Min Typ Max Min Typ Max Min Typ Max

Output HIGH Voltage

=Min., I

= –4.0 mA) 2.4 2.4 2.4 V

Output LOW Voltage (V

=Min., I

= +4.0 mA) 0.4 0.4 0.4 V

Input HIGH Voltage 2.2 2.2 2.2 V

Input LOW Voltage 0.8 0.8 0.8 V

Input Leakage Current −55−55−55μA

Output Leakage Current –10 10 –10 10 –10 10 μA

Operating Current (V

=Max. I

OUT

mA) Outputs Disabled Com’l. 125 185 120 175 115 165 mA

Ind.

[3]

140 195 mA

SB1

Standby Current (Both Ports TTL

Level) CE

& CE

≥V

, f=f

MAX

Com’l. 35 50 35 45 30 40 mA

Ind.

[3]

45 55 mA

SB2

Standby Current (One Port TTL Level)

| CE

≥V

, f=f

MAX

Com’l. 80 120 75 110 65 95 mA

Ind.

[3]

85 120 mA

SB3

Standby Current (Both Ports CMOS

Level) CE

& CE

≥V

−0.2V, f=0 Com’l. 10 250 10 250 10 250 μA

Ind.

[3]

10 250 μA

SB4

Standby Current(OnePort CMOS Lev-

el) CE

| CE

≥V

, f=f

MAX[4]

Com’l. 75 105 70 95 60 80 mA

Ind.

[3]

80 105 mA

Capacitance

[5]

Parameter Description Test Conditions Max Unit

Input Capacitance T

= 25

C, f = 1 MHz,

= 3.3V 10 pF

OUT

Output Capacitance 10 pF

Notes

2. Pulse width < 20 ns.

3. Industrial parts are available in CY7C028V and CY7C038V only.

4. f

MAX

= 1/t

= All inputs cycling at f = 1/t

(except outputenable). f = 0 means no address or control lines change. This applies only to inputs at CMOS level standby I

SB3

5. Tested initially and after any design or process changes that may affect these parameters.

[+] Feedback

CY7C027V/027VN/027AV/028V

CY7C037V/037AV/038V

Document #: 38-06078 Rev. *B Page 7 of 18

Figure 3. AC Test Loads and Waveforms

3.0V

GND 90% 90%

10%

3ns 3ns

10%

ALL INPUTPULSES

(a) Normal Load (Load 1)

R1 = 590Ω

3.3V

OUTPUT

R2 = 435Ω

C= 30pF

=1.4V

OUTPUT

C= 30 pF

(b) Thévenin Equivalent (Load 1) (c)Three-State Delay(Load 2)

R1 = 590Ω

R2 = 435Ω

3.3V

OUTPUT

C= 5pF

= 250Ω

≤≤

including scope and jig)

(Used for t

, t

HZWE

, & t

LZWE

Switching Characteristics

Over the Operating Range

[6]

Parameter Description

CY7C027V/027VN/027AV/028V/

CY7C037V/037AV/038V Unit

-15 -20 -25

Min Max Min Max Min Max

Read Cycle

Read Cycle Time 15 20 25 ns

Address to Data Valid 15 20 25 ns

OHA

Output Hold From Address Change 3 3 3 ns

ACE[7]

CE LOW to Data Valid 15 20 25 ns

DOE

OE LOW to Data Valid 10 12 13 ns

LZOE[8, 9, 10]

OE LOW to Low Z 3 3 3 ns

HZOE[8, 9, 10]

OE HIGH to High Z 10 12 15 ns

LZCE[8, 9, 10]

CE LOW to Low Z 3 3 3 ns

HZCE[8, 9, 10]

CE HIGH to High Z 10 12 15 ns

PU[10]

CE LOW to Power Up 0 0 0 ns

PD[10]

CE HIGH to Power Down 15 20 25 ns

ABE[7]

Byte Enable Access Time 15 20 25 ns

Write Cycle

Write Cycle Time 15 20 25 ns

SCE[7]

CE LOW to Write End 12 16 20 ns

Address Valid to Write End 12 16 20 ns

Address Hold From Write End 0 0 0 ns

SA[7]

Address Setup to Write Start 0 0 0 ns

PWE

Write Pulse Width 12 17 22 ns

Data Setup to Write End 10 12 15 ns

Notes

6. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and outputloading of the specified I

and 30 pF load capacitance.

7. To access RAM, CE=L, UB=L, SEM=H. To access semaphore, CE=H and SEM=L. Either condition must be valid for the entire t

SCE

time.

8. At any given temperature and voltage condition for any given device, t

HZCE

is less than t

LZCE

and t

HZOE

is less than t

LZOE

9. Test conditions used are Load 2.

10.This parameter is guaranteed by design, but it is not production tested. For information on port-to-port delay through RAM cells from writing port to reading port,

refer to Figure 11.

[+] Feedback

CY7C027V/027VN/027AV/028V

CY7C037V/037AV/038V

Document #: 38-06078 Rev. *B Page 8 of 18

Data Retention Mode

The CY7C027V/027VN/027AV/028V and

CY7037V/037AV/038V are designed with battery backup in

mind. Data retention voltage and supply current are guaranteed

over temperature. The following rules ensure data retention:

1. Chip enable (CE) must be held HIGHduring data retention, within

to V

– 0.2V.

2. CE must be kept between V

– 0.2V and 70% of V

during

the power up and power down transitions.

3. The RAM can begin operation >t

after V

reaches the mini-

mum operating voltage (3.0 volts).

Data Hold From Write End 0 0 0 ns

HZWE[9, 10]

R/WLOW to High Z 10 12 15 ns

LZWE[9 ,10]

R/WHIGH to Low Z 3 3 3 ns

WDD[36]

Write Pulse to Data Delay 30 40 50 ns

DDD[36]

Write Data Valid to Read Data Valid 25 30 35 ns

Busy Timing

[11]

BLA

BUSY LOW from Address Match 15 20 20 ns

BHA

BUSY HIGH from Address Mismatch 15 20 20 ns

BLC

BUSY LOW from CE LOW 15 20 20 ns

BHC

BUSY HIGH from CE HIGH 15 16 17 ns

Port Setup for Priority 5 5 5 ns

R/WHIGH after BUSY (Slave) 0 0 0 ns

R/WHIGH after BUSY HIGH(Slave) 13 15 17 ns

BDD[13]

BUSY HIGH to Data Valid 15 20 25 ns

Interrupt Timing

[11]

INS

INT Set Time 15 20 20 ns

INR

INT Reset Time 15 20 20 ns

Semaphore Timing

SOP

SEM Flag Update Pulse (OEor SEM)101012ns

SWRD

SEM Flag Write to Read Time 5 5 5 ns

SPS

SEM Flag Contention Window 5 5 5 ns

SAA

SEM Address Access Time 15 20 25 ns

Switching Characteristics

Over the Operating Range

[6]

(continued)

Parameter Description

CY7C027V/027VN/027AV/028V/

CY7C037V/037AV/038V Unit

-15 -20 -25

Min Max Min Max Min Max

Timing

Parameter Test Conditions

[14]

Max Unit

ICC

DR1

At VCC

= 2V 50 μA

Data Retention Mode

3.0V 3.0V

> 2.0V

to V

–0.2V

VIH

Notes

11. For information on port-to-port delay through RAM cells from writing port to reading port, refer to Figure 11 waveform.

12.Test conditions used are Load 1.

13.t

BDD

is a calculated parameter and is the greater of t

WDD

–t

PWE

(actual) or t

DDD

–t

(actual).

14.CE = V

, V

= GND to V

, T

= 25°C. This parameter is guaranteed but not tested.

[+] Feedback

CY7C027V/027VN/027AV/028V

CY7C037V/037AV/038V

Document #: 38-06078 Rev. *B Page 9 of 18

Switching Waveforms

Notes

15.R/Wis HIGH for read cycles.

16.Device is continuously selected CE = V

and UB or LB = V

. This waveform cannot be used for semaphore reads.

17.OE = V

18.Address valid prior to or coincident with CE transition LOW.

19.To access RAM, CE= V

, UB or LB = V

, SEM = V

. To access semaphore, CE = V

, SEM = V

OHA

DATA VALIDPREVIOUS DATAVALID

DATA OUT

ADDRESS

OHA

Figure 4. Read Cycle No. 1 (Either Port Address Access)

[15, 16, 17]

ACE

LZOE

DOE

HZOE

HZCE

DATA VALID

LZCE

DATA OUT

CE and

LB or UB

CURRENT

Figure 5. Read Cycle No. 2 (Either Port CE/OE Access)

[15, 18, 19]

UB or LB

DATA OUT

ADDRESS

OHA

LZCE

ABE

HZCE

ACE

LZCE

Figure 6. Read Cycle No. 3 (Either Port)

[15, 17, 18, 19]

[+] Feedback

CY7C027V/027VN/027AV/028V

CY7C037V/037AV/038V

Document #: 38-06078 Rev. *B Page 10 of 18

Notes

20.R/Wmust be HIGH duringall address transitions.

21.A write occurs during the overlap (t

SCE

or t

PWE

) of a LOW CE or SEM and a LOW UB or LB.

22.t

is measured from the earlier of CEor R/W or (SEM or R/W) going HIGH at the end of write cycle.

23.If OEis LOW during a R/W controlled write cycle, the write pulse width must be the larger of t

PWE

or (t

HZWE

+ t

) to allow the I/O drivers to turn off and data to be placed on

the bus for the required t

. If OE is HIGH during an R/W controlled write cycle, this requirement does not apply and the write pulse can be as short as the specified t

PWE

24.To access RAM, CE= V

, SEM = V

25.To access upper byte, CE = V

, UB = V

, SEM = V

To access lower byte, CE = V

, LB = V

, SEM = V

26.Transition is measured ±500 mV from steadystate with a 5 pF load (including scope and jig).This parameter is sampled and not 100% tested.

27.During this period, the I/O pins are in the output state, and input signals must not be applied.

28.If the CEor SEM LOW transition occurs simultaneously with or after the R/W LOW transition, the outputs remain in the high impedance state.

Switching Waveforms

(continued)

PWE

R/W

DATAOUT

DATA IN

ADDRESS

HZOE

HZWE

LZWE

Figure 7. Write Cycle No. 1: R/W Controlled Timing

[20, 21, 22, 23]

[26]

[23]

[24,25]

NOTE 27 NOTE 27

SCE

R/W

DATA IN

ADDRESS

Figure 8. Write Cycle No. 2: CE Controlled Timing

[20, 21, 22, 28]

[24,25]

[+] Feedback

Ce manuel convient aux modèles suivants

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