Cypress Semiconductor CY62157CV30 Manuel utilisateur

512K x 16 Static RAM

CY62157CV30/33

Cypress Semiconductor Corporation • 198ChampionCourt • San Jose,CA 95134-1709 • 408-943-2600

Document #: 38-05014 Rev. *F Revised August 31, 2006

Features

• Temperature Ranges

— Automotive-A: –40°C to 85°C

— Automotive-E: –40°C to 125°C

•Voltage range:

— CY62157CV30: 2.7V–3.3V

— CY62157CV33: 3.0V–3.6V

• Ultra-low active power

— Typical active current: 1.5 mA @ f = 1 MHz

— Typical active current: 5.5 mA @ f = fmax

• Low standby power

• Easy memory expansionwithCE1,CE2andOE features

• Automatic power-down when deselected

• CMOS for optimum speed/power

• Available in Pb-free and non Pb-free 48-ball FBGA

package

Functional Description[1]

The CY62157CV30/33 are high-performance CMOS static

RAMs organized as 512K words by 16 bits. These devices

feature advanced circuit design to provide ultra-low active

current. This is ideal for providing More Battery Life™

(MoBL™) in portable applications such as cellular telephones.

The devices also have an automatic power-down feature that

significantly reduces power consumption by 80% when

addresses are not toggling. The device can also be put into

standbymodereducingpowerconsumptionbymore than99%

when deselected (CE1HIGH or CE2LOW or both BLE and

BHE are HIGH). The input/output pins (I/O0through I/O15) are

placed in a high-impedance state when: deselected (CE1

HIGH or CE2LOW), outputs are disabled (OE HIGH), both

Byte High Enable and Byte Low Enable are disabled (BHE,

BLE HIGH), or during a write operation (CE1LOW and CE2

HIGH and WE LOW).

Writing to the device is accomplished by taking Chip Enable 1

(CE1) and Write Enable (WE) inputs LOW and Chip Enable 2

(CE2) HIGH. If Byte Low Enable (BLE) is LOW, then data from

I/O pins (I/O0through I/O7), is written into the location

specified on the address pins (A0through A18). If Byte High

Enable (BHE) is LOW, then data from I/O pins (I/O8through

I/O15) is written into the location specified on the address pins

(A0through A18).

Reading from the device is accomplished by taking Chip

Enable 1 (CE1) and Output Enable (OE) LOW and Chip

Enable 2 (CE2) HIGH while forcing the Write Enable (WE)

HIGH. If Byte Low Enable (BLE) is LOW, then data from the

memory location specified by the address pins will appear on

I/O0to I/O7. If Byte High Enable (BHE) is LOW, then data from

memory will appear on I/O8to I/O15. See the truth table at the

back of this data sheet for a complete description of read and

write modes.

The CY62157CV30/33 are available in a 48-ball FBGA

package.

Note:

1. For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.

Logic Block Diagram

512K × 16

RAM Array I/O

–I/O

ROW DECODER

COLUMN DECODER

SENSE AMPS

DATA IN DRIVERS

I/O

–I/O

BLE

BHE

Power-down

Circuit

BHE

BLE

[+] Feedback

CY62157CV30/33

Document #: 38-05014 Rev. *F Page 2 of 13

Product Portfolio

Product Range VCC Range

Power Dissipation

Operating (ICC) mA Standby (ISB2)

µAf = 1 MHz f = fmax

Min. Typ.[2] Max. Typ.[2] Max. Typ.[2] Max. Typ.[2] Max.

CY62157CV30 Automotive-E 2.7V 3.0V 3.3V 1.5 3 7 15 8 70

CY62157CV33 Automotive-A 3.0V 3.3V 3.6V 1.5 3 5.5 12 10 30

Automotive-E 1.5 3 7 15 10 80

Pin Configurations[2, 3, 4]

FBGA (Top View)

Pin Definitions

Name Definition

Input A0-A18. Address Inputs

Input/Output I/O0-I/O15. Data lines. Used as input or output lines depending on operation

Input/Control WE. Write Enable, Active LOW. When selected LOW, a WRITE is conducted. When selected HIGH, a READ is

conducted.

Input/Control CE1. Chip Enable 1, Active LOW.

Input/Control CE2. Chip Enable 2, Active HIGH.

Input/Control OE. Output Enable, Active LOW. Controls the direction of the I/O pins. When LOW, the I/O pins behave as

outputs. When deasserted HIGH, I/O pins are three-stated, and act as input data pins

Ground Vss. Ground for the device

Power Supply Vcc. Power supply for the device

Notes:

2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ.), TA= 25°C.

3. NC pins are not connected on the die.

4. E3 (DNU) can be left as NC or VSS to ensure proper application.

I/O

BHE

BLE

I/O

DNU

326541

[+] Feedback

CY62157CV30/33

Document #: 38-05014 Rev. *F Page 3 of 13

Maximum Ratings

(Above which the useful life may be impaired. For user guide-

lines, not tested.)

Storage Temperature ................................. –65°C to +150°C

Ambient Temperature with

Power Applied.............................................–55°C to +125°C

Supply Voltage to Ground Potential...–0.5V to Vccmax + 0.5V

DC Voltage Applied to Outputs

in High-Z State[5]....................................–0.5V to VCC + 0.3V

DC Input Voltage[5].................................–0.5V to VCC + 0.3V

Output Current into Outputs (LOW).............................20 mA

Static Discharge Voltage.......................................... > 2001V

(per MIL-STD-883, Method 3015)

Latch-up Current ................................................... > 200 mA

Operating Range

Device Range

Ambient

Temperature

[TA][6] VCC

CY62157CV30 Automotive-E –40°Cto+125°C 2.7V–3.3V

CY62157CV33 Automotive-A –40°C to +85°C 3.0V–3.6V

Automotive-E –40°Cto+125°C

Electrical Characteristics Over the Operating Range

Parameter Description Test Conditions

CY62157CV30-70

UnitMin. Typ.[2] Max.

VOH Output HIGH Voltage IOH = –1.0 mA VCC = 2.7V 2.4 V

VOL Output LOW Voltage IOL = 2.1 mA VCC = 2.7V 0.4 V

VIH Input HIGH Voltage 2.2 VCC + 0.3V V

VIL Input LOW Voltage –0.3 0.8 V

IIX Input Leakage

Current GND <VI< VCC –10 +10 µA

IOZ Output Leakage

Current GND < VO <VCC, Output Disabled –10 +10 µA

ICC VCC Operating

Supply

Current

f = fMAX = 1/tRC VCC = 3.3V

IOUT = 0 mA

CMOS Levels

715mA

f = 1 MHz 1.5 3

ISB1 Automatic CE

Power-Down

Current— CMOS

Inputs

CE1> VCC – 0.2V or CE2< 0.2V

VIN > VCC – 0.2V or VIN < 0.2V,

f = fmax (Address and Data Only),

f=0(OE

, WE, BHE and BLE)

870µA

ISB2 Automatic CE

Power-Down

Current—CMOS

Inputs

CE1> VCC – 0.2V or CE2< 0.2V

VIN > VCC – 0.2V or VIN < 0.2V,

f = 0, VCC = 3.3V

870µA

Notes:

5. VIL(min.) = –2.0V for pulse durations less than 20 ns.

6. TAis the “Instant-On” case temperature.

[+] Feedback

CY62157CV30/33

Document #: 38-05014 Rev. *F Page 4 of 13

Electrical Characteristics Over the Operating Range

Parameter Description Test Conditions

CY62157CV33-70

UnitMin. Typ.[2] Max.

VOH Output HIGH

Voltage IOH = –1.0 mA

VCC = 3.0V 2.4 V

VOL Output LOW

Voltage IOL = 2.1 mA

VCC = 3.0V 0.4 V

VIH Input HIGH Voltage 2.2 VCC + 0.3V V

VIL Input LOW Voltage –0.3 0.8 V

IIX Input Leakage

Current GND <VI< VCC Auto-A –1 +1 µA

Auto-E –10 +10 µA

IOZ Output Leakage

Current GND < VO <VCC, Output Disabled Auto-A –1 +1 µA

Auto-E –10 +10 µA

ICC VCC Operating

Supply

Current

f = fMAX = 1/tRC VCC = 3.6V

IOUT = 0 mA

CMOSLevels

Auto-A 5.5 12 mA

Auto-E 7 15

f = 1 MHz Auto-A/

Auto-E 1.5 3

ISB1 Automatic CE

Power-Down

Current—CMOS

Inputs

CE1> VCC – 0.2V or

CE2< 0.2V

VIN > VCC – 0.2V or

VIN < 0.2V,

f = fmax (Address and Data

Only),

f = 0 (OE,WE,BHE,and BLE)

Auto-A 10 30 µA

Auto-E 10 80 µA

ISB2 Automatic CE

Power-Down

Current—CMOS

Inputs

CE1> VCC – 0.2V or

CE2< 0.2V

VIN > VCC – 0.2V or

VIN < 0.2V,

f = 0, VCC = 3.6V

Auto-A 10 30 µA

Auto-E 10 80 µA

Thermal Resistance[7]

Parameter Description Test Conditions FBGA Unit

ΘJA Thermal Resistance

(Junction to Ambient) Still Air, soldered on a 3 x 4.5 inch, two-layer printed

circuit board 55 °C/W

ΘJC Thermal Resistance

(Junction to Case) 16 °C/W

Note:

7. Tested initially and after any design or process changes that may affect these parameters.

[+] Feedback

CY62157CV30/33

Document #: 38-05014 Rev. *F Page 5 of 13

Capacitance[7]

Parameter Description Test Conditions Max. Unit

CIN Input Capacitance TA= 25°C, f = 1 MHz,

VCC = VCC(typ.) 6pF

COUT Output Capacitance 8 pF

AC Test Loads and Waveforms

Typ

OUTPUT

30 pF

INCLUDING

JIG AND

SCOPE

GND

90%

10% 90%

10%

OUTPUT V

Equivalent to: THÉVENIN EQUIVALENT

ALL INPUT PULSES

Rise TIme: 1 V/ns Fall Time: 1 V/ns

Parameters 3.0V 3.3V Unit

R1 1.105 1.216 ΚΩ

R2 1.550 1.374 ΚΩ

RTH 0.645 0.645 ΚΩ

VTH 1.75 1.75 V

Data Retention Characteristics (Over the Operating Range)

Parameter Description Conditions Min. Typ.[2] Max. Unit

VDR VCC for Data Retention 1.5 V

ICCDR Data Retention Current VCC = 1.5V, CE1> VCC – 0.2V or

CE2< 0.2V,

VIN > VCC – 0.2V or VIN < 0.2V

Auto-A 4 20 µA

Auto-E 460µA

tCDR[8] Chip Deselect to Data

Retention Time 0ns

tR[8] Operation Recovery Time tRC ns

Data Retention Waveform[9]

Notes:

8. Full Device AC operation requires linear VCC ramp from VDR to VCC(min.) > 100 µs or stable at VCC(min.) >100 µs.

9. BHE.BLE is the AND of both BHE and BLE. Chip can be deselected by either disabling the chip enable signals or by disabling both BHE and BLE.

CC(min.)

CDR

>1.5 V

DATA RETENTION MODE

BHE.BLE

[+] Feedback

CY62157CV30/33

Document #: 38-05014 Rev. *F Page 6 of 13

Switching Characteristics Over the Operating Range [10]

Parameter Description

70 ns

UnitMin. Max.

Read Cycle

tRC Read Cycle Time 70 ns

tAA Address to Data Valid 70 ns

tOHA Data Hold from Address Change 10 ns

tACE CE1 LOW and CE2 HIGH to Data Valid 70 ns

tDOE OE LOW to Data Valid 35 ns

tLZOE OE LOW to Low-Z[11] 5ns

tHZOE OE HIGH to High-Z[11, 12] 25 ns

tLZCE CE1 LOW and CE2 HIGH to Low-Z[11] 10 ns

tHZCE CE1 HIGH or CE2 LOW to High-Z[11, 12] 25 ns

tPU CE1 LOW and CE2 HIGH to Power-up 0 ns

tPD CE1 HIGH or CE2 LOW to Power-down 70 ns

tDBE BHE/BLE LOW to Data Valid 70 ns

tLZBE[11] BHE/BLE LOW to Low-Z[13] 5ns

tHZBE BHE/BLE HIGH to High-Z[11, 12] 25 ns

Write Cycle[14]

tWC Write Cycle Time 70 ns

tSCE CE1 LOW and CE2 HIGH to Write End 60 ns

tAW Address Set-up to Write End 60 ns

tHA Address Hold from Write End 0 ns

tSA Address Set-up to Write Start 0 ns

tPWE WE Pulse Width 50 ns

tBW BHE/BLE Pulse Width 60 ns

tSD Data Set-up to Write End 30 ns

tHD Data Hold from Write End 0 ns

tHZWE WE LOW to High-Z[11, 12] 25 ns

tLZWE WE HIGH to Low-Z[11] 5ns

Notes:

10.Test conditions assume signal transition time of 5 ns or less, timing reference levels of VCC(typ.)/2, input pulse levels of 0 to VCC(typ.), and output loading of the

specified IOL/IOH and 30-pF load capacitance.

11.At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZBE is less than tLZBE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any

given device.

12.tHZOE, tHZCE, tHZBE, and tHZWE transitions are measured when the outputs enter a high-impedance state.

13.When both byte enables are toggled together this value is 10 ns.

14.The internal Write time of the memory is defined by the overlap of WE, CE1 = VIL, BHE and/or BLE = VIL, CE2 = VIH. All signals must be ACTIVE to initiate a

Write and any of these signals can terminate a Write by going INACTIVE. The data input set-up and hold timing should be referenced to the edge of the signal

that terminates the Write.

[+] Feedback

CY62157CV30/33

Document #: 38-05014 Rev. *F Page 7 of 13

Switching Waveforms

Read Cycle No. 1 (Address Transition Controlled)[15, 16]

Read Cycle No. 2 (OE Controlled)[16, 17]

Notes:

15.Device is continuously selected. OE, CE1 = VIL, BHE and/or BLE = VIL, CE2 = VIH.

16.WE is HIGH for Read cycle.

17.Address valid prior to or coincident with CE1, BHE, BLE transition LOW and CE2transition HIGH.

ADDRESS

DATA OUT PREVIOUS DATA VALID DATA VALID

tRC

tAA

tOHA

50%

DATA VALID

tRC

tACE

tDOE

tLZOE

tLZCE

tPU

HIGH IMPEDANCE

tHZOE tHZCE

tPD

HIGH

CE1

ICC

ISB

IMPEDANCE

ADDRESS

CE2

DATA OUT

VCC

SUPPLY

CURRENT

BHE/BLE

tLZBE

tHZBE

[+] Feedback

CY62157CV30/33

Document #: 38-05014 Rev. *F Page 8 of 13

Write Cycle No. 1 (WE Controlled)[14, 18, 19]

Notes:

18.Data I/O is high-impedance if OE = VIH.

19.If CE1goes HIGH or CE2goes LOW simultaneously with WE HIGH, the output remains in a high-impedance state.

20.During this period, the I/Os are in output state and input signals should not be applied.

Switching Waveforms (continued)

tHD

tSD

tPWE

tSA

tHA

tAW

tSCE

tWC

tHZOE

DATAIN VALID

CE1

ADDRESS

CE2

DATA I/O

NOTE 20

BHE/BLE tBW

[+] Feedback

CY62157CV30/33

Document #: 38-05014 Rev. *F Page 9 of 13

Write Cycle No. 2 (CE1or CE2Controlled) [14, 18, 19]

Write Cycle No. 3 (WE Controlled, OE LOW)[19]

Switching Waveforms (continued)

tHD

tSD

tPWE

tHA

tAW

tSCE

tWC

tHZOE

DATAIN VALID

CE1

ADDRESS

CE2

DATA I/O

NOTE 20

BHE/BLE tBW

tSA

DATAIN VALID

tHD

tSD

tLZWE

tPWE

tSA

tHA

tAW

tSCE

tWC

tHZWE

CE1

ADDRESS

CE2

DATAI/O NOTE 20

tBW

BHE/BLE

[+] Feedback

CY62157CV30/33

Document #: 38-05014 Rev. *F Page 10 of 13

Write Cycle No. 4 (BHE/BLE Controlled, OE LOW)[19]

Truth Table

CE1CE2WE OE BHE BLE Inputs/Outputs Mode Power

H X X X X X High Z Deselect/Power-Down Standby (ISB)

X L X X X X High Z Deselect/Power-Down Standby (ISB)

X X X X H H High Z Deselect/Power-Down Standby (ISB)

L H H L L L Data Out (I/OO–I/O15) Read Active (ICC)

L H H L H L Data Out (I/OO–I/O7);

I/O8–I/O15 in High Z Read Active (ICC)

L H H L L H Data Out (I/O8–I/O15);

I/O0–I/O7 in High Z Read Active (ICC)

L H H H L L High Z Output Disabled Active (ICC)

L H H H H L High Z Output Disabled Active (ICC)

L H H H L H High Z Output Disabled Active (ICC)

L H L X L L Data In (I/OO–I/O15) Write Active (ICC)

L H L X H L Data In (I/OO–I/O7);

I/O8–I/O15 in High Z Write Active (ICC)

L H L X L H Data In (I/O8–I/O15);

I/O0–I/O7 in High Z Write Active (ICC)

Switching Waveforms (continued)

DATA I/O

ADDRESS

tWC

CE1

DATA

VALID

NOTE 20

BHE/BLE

tSCE

CE2

PWE

[+] Feedback

Ce manuel convient aux modèles suivants

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