Panasonic Transistors 2SA2161J Manuel utilisateur

Transistors

Publication date: November 2004 SJC00312BED

2SA2161J

Silicon PNP epitaxial planar type

For general amplification

Complementary to 2SC6037J

■Features

•Low collector-emitter saturation voltage VCE(sat)

•SS-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing

■Absolute Maximum Ratings Ta=25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) VCBO −15 V

Collector-emitter voltage (Base open) VCEO −12 V

Emitter-base voltage (Collector open) VEBO −5V

Collector current IC−500 mA

Peak collector current ICP −1A

Collector power dissipation PC125 mW

Junction temperature Tj125 °C

Storage temperature Tstg −55 to +125 °C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) VCBO IC=−10 µA, IE=0 −15 V

Collector-emitter voltage (Base open) VCEO IC=−1 mA, IB=0 −12 V

Emitter-base voltage (Collector open) VEBO IE=−10 µA, IC=0 −5V

Collector-base cutoff current (Emitter open)

ICBO VCB =−15 V, IE=0 −0.1 µA

Forward current transfer ratio hFE VCE =−2 V, IC=−10 mA 270 680 

Collector-emitter saturation voltage VCE(sat) IC=−200 mA, IB=−10 mA −250 mV

Transition frequency fTVCB =−2 V, IE=10 mA, f =200 MHz 200 MHz

Collector output capacitance Cob VCB =10 V, IE=0, f =1 MHz 4.5 pF

(Common base, input open circuited)

■Electrical Characteristics Ta=25°C ±3°C

Unit: mm

Marking Symbol: 2U

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

1: Base

2: Emitter

3: Collector

EIAJ: SC-89, JEDEC: SOT-490

SSMini3-F1 Package

0.27±0.02

0.12+0.03

–0.01

0.80±0.05(0.80)

0.85

1.60±0.05

0 to 0.02

0.10 max.

0.70+0.05

–0.03

(0.375)

5˚

1.60+0.05

–0.03

1.00±0.05

(0.50)(0.50)

+0.05

–0.03

This product complies with the RoHS Directive (EU 2002/95/EC).

2SA2161J

2SJC00312BED

VCE(sat) IChFE ICCob VCB

PCTaICVCE ICVBE

020 40 60 80 100 120 140

100

120

140

Collector power dissipation PC(mW)

Ambient temperature Ta(°C)

−10

−20

−30

−40

−50

−60

−70

0− 0.5 −1.0 −1.5 −2.0 −2.5 −3.0

Collector current I

(mA)

Collector-emitter voltage

VCE (V)

IB = −160 µA

−140 µA

−120 µA

−100 µA

−80 µA

−60 µA

−40 µA

−20 µA

=25°C

0−1.4−1.2−1.0− 0.8− 0.2 − 0.6− 0.4

−10

−20

−30

−40

−50

−60

−70

−80

−90

−100

Base-emitter voltage VBE (V)

Collector current I

(mA)

=−2 V

=85°C−25°C

25°C

−1

000−100−10−1− 0.1

− 0.1

− 0.01

−1

Collector-emitter saturation voltage VCE(sat) (V)

Collector current IC(mA)

=85°C

25°C

−25°C

/ I

=20

−1−10 −100

−1 000

600

500

400

300

200

100

Forward current transfer ratio hFE

Collector current IC(mA)

Ta=85°C

25°C

−25°C

VCE =−2 V

510

100

Collector-base voltage VCB (V)

Collector output capacitance

(Common base, input open circuited) C

(pF)

f =1 MHz

=25°C

This product complies with the RoHS Directive (EU 2002/95/EC).

Request for your special attention and precautions in using the technical information and

semiconductors described in this book

(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

regulations of the exporting country, especially, those with regard to security export control, must be observed.

(2)The technical information described in this book is intended only to show the main characteristics and application circuit examples

of the products, and no license is granted under any intellectual property right or other right owned by our company or any other

company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other

company which may arise as a result of the use of technical information described in this book.

(3)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office

equipment, communications equipment, measuring instruments and household appliances).

Consult our sales staff in advance for information on the following applications:

–Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support

systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-

ucts may directly jeopardize life or harm the human body.

–Any applications other than the standard applications intended.

(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-

provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product

Standards in advance to make sure that the latest specifications satisfy your requirements.

(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions

(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute

maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any

defect which may arise later in your equipment.

 Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure

mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire

or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.

(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,

thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which

damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.

(7)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita

Electric Industrial Co., Ltd.

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