Cypress Semiconductor Perform STK12C68 Manuel utilisateur

STK12C68

64 Kbit (8K x 8) AutoStore nvSRAM

Cypress Semiconductor Corporation • 198 Champion Court • San Jose

CA 95134-1709 • 408-943-2600

Document Number: 001-51027 Rev. ** Revised January 30, 2009

Features

■

25 ns, 35 ns, and 45 ns access times

■

Hands off automatic STORE on power down with external 68

µF capacitor

■

STORE to QuantumTrap™ nonvolatile elements is initiated by

software, hardware, or AutoStore™ on power down

■

RECALL to SRAM initiated by software or power up

■

Unlimited Read, Write, and Recall cycles

■

1,000,000 STORE cycles to QuantumTrap

■

100 year data retention to QuantumTrap

■

Single 5V+10% operation

■

Commercial and industrial temperatures

■

228-pin (330mil) SOIC, 28-pin (300mil) PDIP, 28-pin (600mil)

PDIP packages

■

28-pin (300 mil) CDIP and 28-pad (350 mil) LCC packages

■

RoHS compliance

Functional Description

The Cypress STK12C68 is a fast static RAM with a nonvolatile

element in each memory cell. The embedded nonvolatile

elements incorporate QuantumTrap technology producing the

world’s most reliable nonvolatile memory. The SRAM provides

unlimited read and write cycles, while independent nonvolatile

data resides in the highly reliable QuantumTrap cell. Data

transfers from the SRAM to the nonvolatile elements (the

STORE operation) takes place automatically at power down. On

power up, data is restored to the SRAM (the RECALL operation)

from the nonvolatile memory. Both the STORE and RECALL

operations are also available under software control. A hardware

STORE is initiated with the HSB pin.

STORE/

RECALL

CONTROL

POWER

CONTROL

SOFTWARE

DETECT

STATIC RAM

ARRAY

128 X 512

Quantum Trap

128 X 512

STORE

RECALL

COLUMN I/O

COLUMN DEC

ROW DECODER

INPUT BUFFERS

HSB

CAP

Logic Block Diagram

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STK12C68

Document Number: 001-51027 Rev. ** Page 2 of 20

Pin Configurations

Pin Definitions

Pin Name Alt IO Type Description

–A

Input Address Inputs. Used to select one of the 8,192 bytes of the nvSRAM.

-DQ

Input or Output Bidirectional Data IO Lines. Used as input or output lines depending on operation.

WE WInput Write Enable Input, Active LOW. When the chip is enabled and WE is LOW, data on the IO

pins is written to the specific address location.

CE EInput Chip Enable Input, Active LOW. When LOW, selects the chip. When HIGH, deselects the chip.

OE GInput Output Enable, Active LOW. The active LOW OE input enables the data output buffers during

read cycles. Deasserting OE HIGH causes the IO pins to tri-state.

Ground Ground for the Device.The device is connected to ground of the system.

Power Supply Power Supply Inputs to the Device.

HSB Input or Output HardwareStoreBusy(HSB).WhenLOW,this output indicatesaHardwareStoreis inprogress.

When pulled low external to the chip, it initiates a nonvolatile STORE operation. A weak internal

pull up resistor keeps this pin high if not connected (connection optional).

CAP

Power Supply AutoStore

Capacitor. Supplies power to nvSRAM during power loss to store data from SRAM

to nonvolatile elements.

Figure1. 28-PinSOIC/DIPandLLC

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STK12C68

Document Number: 001-51027 Rev. ** Page 3 of 20

Device Operation

The STK12C68 nvSRAM is made up of two functional compo-

nents paired in the same physical cell. These are an SRAM

memory cell and a nonvolatile QuantumTrap cell. The SRAM

memory cell operates as a standard fast static RAM. Data in the

SRAM is transferred to the nonvolatile cell (the STORE

operation) or from the nonvolatile cell to SRAM (the RECALL

operation). This unique architecture enables the storage and

recall of all cells in parallel. During the STORE and RECALL

operations, SRAM Read and Write operations are inhibited. The

STK12C68 supports unlimited reads and writes similar to a

typical SRAM. In addition, it provides unlimited RECALL opera-

tions from the nonvolatile cells and up to one million STORE

operations.

SRAM Read

TheSTK12C68performsaReadcyclewheneverCE and OEare

LOW while WE and HSB are HIGH. The address specified on

pins A

0–12

determines the 8,192 data bytes accessed. When the

Read is initiated by an address transition, the outputs are valid

after a delay of t

(Read cycle 1). If the Read is initiated by CE

or OE, the outputs are valid at t

ACE

or at t

DOE

, whichever is later

(Read cycle 2). The data outputs repeatedly respond to address

changes within the t

access time without the need for transi-

tions on any control input pins, and remains valid until another

address change or until CE or OE is brought HIGH, or WE or

HSB is brought LOW.

SRAM Write

A Write cycle is performed whenever CE and WE are LOW and

HSBisHIGH.The addressinputsmust be stablepriortoentering

the Write cycle and must remain stable until either CE or WE

goes HIGH at the end of the cycle. The data on the common IO

pins DQ

0–7

are written into the memory if it has valid t

, before

the end of a WE controlled Write or before the end of an CE

controlled Write. Keep OE HIGH during the entire Write cycle to

avoid data bus contention on common IO lines. If OE is left LOW,

internal circuitry turns off the output buffers t

HZWE

after WE goes

LOW.

AutoStore Operation

The STK12C68 stores data to nvSRAM using one of three

storage operations:

1. Hardware store activated by HSB

2. Software store activated by an address sequence

3. AutoStore on device power down

AutoStore operation is a unique feature of QuantumTrap

technology and is enabled by default on the STK12C68.

During normal operation, the device draws current from V

charge a capacitor connected to the V

CAP

pin. This stored

charge is used by the chip to perform a single STORE operation.

If the voltage on the V

pin drops below V

SWITCH

, the part

automatically disconnects the V

CAP

pin from V

. A STORE

operation is initiated with power provided by the V

CAP

capacitor.

Figure 2 shows the proper connection of the storage capacitor

CAP

) for automatic store operation. A charge storage capacitor

between 68 µF and 220 µF (+20%) rated at 6V should be

provided. The voltageon the V

CAP

pin is driven to 5V bya charge

pump internal to the chip. A pull up is placed on WE to hold it

inactive during power up.

In system power mode, both V

and V

CAP

are connected to the

+5V power supply without the 68 μF capacitor. In this mode, the

AutoStore function of the STK12C68 operates on the stored

system charge as power goes down. The user must, however,

guarantee that V

does not drop below 3.6V during the 10 ms

STORE

cycle.

To reduce unnecessary nonvolatile stores, AutoStore, and

Hardware Storeoperations areignored, unless atleastone Write

operation has taken place since the most recent STORE or

RECALL cycle. Software initiated STORE cycles are performed

regardless of whether a Write operation has taken place. An

optional pull up resistor is shown connected to HSB.The HSB

signal is monitored by the system to detect if an AutoStore cycle

is in progress.

Figure 2. AutoStore Mode

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STK12C68

Document Number: 001-51027 Rev. ** Page 4 of 20

Figure 3. AutoStore Inhibit Mode

If the power supply drops faster than 20 us/volt before Vcc

reaches V

SWITCH

, then a 2.2 ohm resistor should be connected

between V

and the system supply to avoid momentary excess

of current between V

and V

CAP

AutoStore Inhibit Mode

If an automatic STORE

on power loss is not required, then V

is tied to ground and +5V is applied to V

CAP

(Figure 3). This is

the AutoStore Inhibit mode, where the AutoStore function is

disabled.If the STK12C68isoperatedinthis configuration,refer-

ences to V

are changed to V

CAP

throughout this data sheet.

In this mode, STORE

operations are triggered through software

control or the HSB pin. To enable or disable Autostore using an

I/O port pin see Preventing Store on page 5.It is not permissible

to change between these three options “on the fly”.

Hardware STORE (HSB) Operation

The STK12C68 provides the HSB pin for controlling and

acknowledging the STORE operations. The HSB pin is used to

request a hardware STORE cycle. When the HSB pin is driven

LOW, the STK12C68 conditionally initiates a STORE operation

after t

DELAY

. An actual STORE cycle only begins if a Write to the

SRAM takes place since the last STORE or RECALL cycle. The

HSB pin also acts as an open drain driver that is internally driven

LOW to indicate a busy condition, while the STORE (initiated by

any means) is in progress.

SRAM Read and Write operations, that are in progress when

HSB is driven LOW by any means, are given time to complete

before the STORE operation is initiated. After HSB goes LOW,

the STK12C68 continues SRAM operations for t

DELAY

. During

DELAY

, multiple SRAM Read operations take place. If a Write is

in progress when HSB is pulled LOW, it allows a time, t

DELAY

complete. However, any SRAM Write cycles requested after

HSB goes LOW are inhibited until HSB returns HIGH.

During any STORE operation, regardless of how it is initiated,

the STK12C68 continues to drive the HSB pin LOW, releasing it

only when the STORE is complete. After completing the STORE

operation, the STK12C68 remains disabled until the HSB pin

returns HIGH.

If HSB is not used, it is left unconnected.

Hardware RECALL (Power Up)

During power up or after any low power condition (V

RESET

), an internal RECALL request is latched. When V

once again exceeds the sense voltage of V

SWITCH

, a RECALL

cycle is automatically initiated and takes t

HRECALL

to complete.

If the STK12C68 is in a Write

state at the end of power up

RECALL, the SRAM

data is corrupted. To help avoid this

situation, a 10 Kohm resistor is connected either between WE

and system V

or between CE and system V

Software STORE

Data is transferred from the SRAM to the nonvolatile memory by

a software address sequence. The STK12C68 software STORE

cycle is initiated by executing sequential CE controlled Read

cycles from six specific address locations in exact order. During

the STORE cycle, an erase of the previous nonvolatile data is

first performed followed by a program of the nonvolatile

elements. When a STORE cycle is initiated, input and output are

disabled until the cycle is completed.

Because a sequence of Reads from specific addresses is used

for STORE initiation, it is important that no other Read or Write

accesses intervene in the sequence. If they intervene, the

sequence is aborted and no STORE or RECALL takes place.

To initiate the software STORE cycle, the following Read

sequence is performed:

1. Read address 0x0000, Valid READ

2. Read address 0x1555, Valid READ

3. Read address 0x0AAA, Valid READ

4. Read address 0x1FFF, Valid READ

5. Read address 0x10F0, Valid READ

6. Read address 0x0F0F, Initiate STORE cycle

The software sequence is clocked with CE controlled Reads or

OE controlled Reads. When the sixth address in the sequence

is entered, the STORE cycle commences and the chip is

disabled. It is important that Read cycles and not Write cycles

are used in the sequence. It is not necessary that OE is LOW for

a valid sequence. After the t

STORE

cycle time is fulfilled, the

SRAM is again activated for Read and Write operation.

Software RECALL

Data is transferred from the nonvolatile memory to the SRAM by

a software address sequence. A software RECALL cycle is

initiated with a sequence of Read operations in a manner similar

to the software STORE initiation. To initiate the RECALL cycle,

the following sequence of CE controlled Read operations is

performed:

1. Read address 0x0000, Valid READ

2. Read address 0x1555, Valid READ

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STK12C68

Document Number: 001-51027 Rev. ** Page 5 of 20

3. Read address 0x0AAA, Valid READ

4. Read address 0x1FFF, Valid READ

5. Read address 0x10F0, Valid READ

6. Read address 0x0F0E, Initiate RECALL cycle

Internally, RECALL isa twostepprocedure. First, theSRAMdata

is cleared; then, the nonvolatile information is transferred into the

SRAM cells. After the t

RECALL

cycle time, the SRAM is again

ready for Read and Write operations. The RECALL operation

does not alter the data in the nonvolatile elements. The nonvol-

atile data can be recalled an unlimited number of times.

Data Protection

The STK12C68 protects data from corruption during low voltage

conditions by inhibiting all externally initiated STORE and Write

operations. The low voltage condition is detected when V

less than V

SWITCH

. If the STK12C68 is in a Write mode (both CE

and WE are low) at power up after a RECALL or after a STORE,

the Write is inhibited until a negative transition on CE or WE is

detected. This protects against inadvertent writes during power

up or brown out conditions.

Noise Considerations

The STK12C68 is a high speed memory. It must have a high

frequency bypass capacitor of approximately 0.1 µF connected

between V

and V

SS,

using leads and traces that are as short

as possible. As with all high speed CMOS ICs, careful routing of

power, ground, and signals reduce circuit noise.

Hardware Protect

The STK12C68 offers hardware protection against inadvertent

STORE operation and SRAM Writes during low voltage condi-

tions. When V

CAP

SWITCH

, all externally initiated STORE

operations and SRAM Writes are inhibited. AutoStore can be

completely disabled by tying VCC to ground and applying +5V to

CAP

. This is the AutoStore Inhibit mode; in this mode, STOREs

are only initiated by explicit request using either the software

sequence or the HSB pin.

Low Average Active Power

CMOS technology provides the STK12C68 the benefit of

drawingsignificantlyless currentwhenitiscycledattimeslonger

than 50 ns. Figure 4 shows the relationship between I

and

Read or Write cycle time. Worst case current consumption is

shown for both CMOS and TTL input levels (commercial temper-

ature range, VCC = 5.5V, 100% duty cycle on chip enable). Only

standby current is drawn when the chip is disabled. The overall

average current drawn by the STK12C68 depends on the

following items:

■

The duty cycle of chip enable

■

The overall cycle rate for accesses

■

The ratio of Reads to Writes

■

CMOS versus TTL input levels

■

The operating temperature

■

The V

level

■

IO loading

Preventing Store

The STORE

function is disabled by holding HSB high with a

driver capable of sourcing 30 mA at a V

of at least 2.2V,

because it must overpower the internal pull down device. This

device drives HSB LOW for 20 μs at the onset of a STORE.

When the STK12C68 is connected for AutoStore operation

(system V

connected to V

and a 68 μF capacitor on V

CAP

)

and V

crosses V

SWITCH

on the way down, the STK12C68

attempts to pull HSB LOW. If HSB does not actually get below

, the part stops trying to pull HSB LOW and abort the STORE

attempt.

Figure 4. Current Versus Cycle Time (Read)

Figure 5. Current Versus Cycle Time (Write)

[+] Feedback

STK12C68

Document Number: 001-51027 Rev. ** Page 6 of 20

Best Practices

nvSRAM products have been used effectively for over 15 years.

While ease-of-use is one of the product’s main system values,

experience gained working with hundreds of applications has

resulted in the following suggestions as best practices:

■

The nonvolatile cells in an nvSRAM are programmed on the

test floor during final test and quality assurance. Incoming

inspection routines at customer or contract manufacturer’s

sites sometimes reprograms these values. Final NV patterns

are typically repeating patterns of AA, 55, 00, FF, A5, or 5A.

Theendproduct’sfirmwareshouldnotassumethatanNVarray

is in a set programmed state. Routines that check memory

content values to determine first time system configuration,

cold or warm boot status, and so on must always program a

unique NV pattern (for example, complex 4-byte pattern of 46

E64953hex or more randombytes)as partof the finalsystem

manufacturing test to ensure these system routines work

consistently.

■

Power up boot firmware routines should rewrite the nvSRAM

intothedesiredstate.While thenvSRAM is shipped in apreset

state, best practice is to again rewrite the nvSRAM into the

desired state as a safeguard against events that might flip the

bit inadvertently (program bugs, incoming inspection routines,

and so on).

■

TheVcapvaluespecifiedinthisdatasheetincludesaminimum

and a maximum value size. The best practice is to meet this

requirementandnotexceedthemaximumVcapvaluebecause

the higher inrush currents may reduce the reliability of the

internal pass transistor. Customers who want to use a larger

Vcap value to make sure there is extra store charge should

discuss their Vcap size selection with Cypress.

Table 1. Hardware Mode Selection

CE WE HSB A12–A0 Mode IO Power

H X H X Not Selected Output High Z Standby

L H H X Read SRAM Output Data Active

[3]

L L H X Write SRAM Input Data Active

X X L X Nonvolatile STORE Output High Z I

CC2[1]

L H H 0x0000

0x1555

0x0AAA

0x1FFF

0x10F0

0x0F0F

Read SRAM

Nonvolatile STORE

Output Data

Output High Z

Active I

CC2[2, 3]

L H H 0x0000

0x1555

0x0AAA

0x1FFF

0x10F0

0x0F0E

Read SRAM

Nonvolatile RECALL

Output Data

Output High Z

Active

[2, 3]

Notes

1. HSB STORE operation occurs only if an SRAM Write is done since the last nonvolatile cycle. After the STORE (If any) completes, the part goes into standby

mode, inhibiting all operations until HSB rises.

2. The six consecutive addresses must be in the order listed. WE must be high during all six consecutive CE controlled cycles to enable a nonvolatile cycle.

3. I/O state assumes OE < V

. Activation of nonvolatile cycles does not depend on state of OE.

[+] Feedback

STK12C68

Document Number: 001-51027 Rev. ** Page 7 of 20

Maximum Ratings

Exceeding maximum ratings may shorten the useful life of the

device. These user guidelines are not tested.

Storage Temperature ................................. –65°C to +150°C

Temperature under Bias ............................. –55°C to +125°C

Voltage on Input Relative to GND.....................–0.5V to 7.0V

Voltage on Input Relative to Vss............–0.6V to V

+ 0.5V

Voltage on DQ

0-7

or HSB .......................–0.5V to Vcc + 0.5V

Power Dissipation..........................................................1.0W

DC output Current (1 output at a time, 1s duration) ....15 mA

Operating Range

Range Ambient Temperature V

Commercial 0°C to +70°C 4.5V to 5.5V

Industrial -40°C to +85°C 4.5V to 5.5V

DC Electrical Characteristics

Over the operating range (V

= 4.5V to 5.5V)

[4]

Parameter Description Test Conditions Min Max Unit

CC1

Average V

Current t

= 25 ns

= 35 ns

= 45 ns

Dependent on output loading and cycle rate. Values obtained

without output loads.

OUT

= 0 mA.

CC2

Average V

Current

during STORE All Inputs Do Not Care, V

= Max

Average current for duration t

STORE

3mA

CC3

AverageV

Currentat

= 200 ns, 5V, 25°C

Typical

WE > (V

– 0.2V). All other inputs cycling.

Dependent on output loading and cycle rate. Values obtained

without output loads.

10 mA

CC4

Average V

CAP

Current

during AutoStore Cycle All Inputs Do Not Care, V

= Max

Average current for duration t

STORE

2mA

SB1[5]

Standby Current

(Standby, Cycling TTL

Input Levels)

= 25 ns, CE > V

= 35 ns, CE > V

= 45 ns, CE > V

SB2 [5]

Standby Current CE > (V

– 0.2V). All others V

<0.2V or >

– 0.2V). Standby current level after

nonvolatile cycle is complete.

Inputs are static. f = 0 MHz.

Commercial 1.5 mA

Industrial 2.5 mA

Input Leakage Current V

= Max, V

< V

-1 +1 μA

Input Leakage Current V

= Max, V

< V

-1 +1 μA

Off State Output

Leakage Current V

= Max, V

< V

, CE or OE > V

or WE < V

-5 +5 μA

Input HIGH Voltage 2.2 V

0.5 V

Input LOW Voltage V

– 0.5 0.8 V

Output HIGH Voltage I

OUT

= –4 mA 2.4 V

Output LOW Voltage I

OUT

= 8 mA 0.4 V

Logic ‘0’ Voltage on

HSB Output I

OUT

= 3 mA 0.4 V

CAP

Storage Capacitor Between Vcap pin and Vss, 6V rated. 68 µF +20% nom. 54 260 µF

Notes

4. V

reference levels throughout this data sheet refer to VCC if that is where the power supply connection is made, or V

CAP

if VCC is connected to ground.

5. CE > V

does not produce standby current levels until any nonvolatile cycle in progress has timed out.

[+] Feedback

STK12C68

Document Number: 001-51027 Rev. ** Page 8 of 20

Data Retention and Endurance

Parameter Description Min Unit

DATA

Data Retention 100 Years

Nonvolatile STORE Operations 1,000 K

Capacitance

In the following table, the capacitance parameters are listed.

[6]

Parameter Description Test Conditions Max Unit

Input Capacitance T

= 25°C, f = 1 MHz,

= 0 to 3.0 V 8pF

OUT

Output Capacitance 7pF

Thermal Resistance

In the following table, the thermal resistance parameters are listed.

[6]

Parameter Description Test Conditions 28-SOIC 28-PDIP

(300 mil) 28-PDIP

(600 mil) 28-CDIP 28-LCC Unit

Thermal Resis-

tance

(Junction to

Ambient)

Test conditions follow

standard test methods and

procedures for measuring

thermal impedance, per EIA /

JESD51.

46.55 45.16 55.84 46.1 95.31 °C/W

Thermal Resis-

tance

(Junction to Case)

27.95 31.62 25.74 5.01 9.01 °C/W

Figure 6. AC Test Loads

AC Test Conditions

5.0V

Output

30 pF

R1 963Ω

512Ω

5.0V

Output

5 pF

R1 963

512

For Tri-state Specs

Input Pulse Levels..................................................0 V to 3 V

Input Rise and Fall Times (10% to 90%)...................... <5 ns

Input and Output Timing Reference Levels.......................1.5

Note

6. These parameters are guaranteed by design and are not tested.

[+] Feedback

STK12C68

Document Number: 001-51027 Rev. ** Page 9 of 20

AC Switching Characteristics

SRAM Read Cycle

Parameter Description 25 ns 35 ns 45 ns Unit

Min Max Min Max Min Max

Cypress

Parameter Alt

ACE

ELQV

Chip Enable Access Time 25 35 45 ns

RC [7]

AVAV,

ELEH

Read Cycle Time 25 35 45 ns

AA [8]

AVQV

Address Access Time 25 35 45 ns

DOE

GLQV

Output Enable to Data Valid 10 15 20 ns

OHA [8]

AXQX

Output Hold After Address Change 5 5 5 ns

LZCE [9]

ELQX

Chip Enable to Output Active 5 5 5 ns

HZCE [9]

EHQZ

Chip Disable to Output Inactive 10 10 12 ns

LZOE [9]

GLQX

Output Enable to Output Active 0 0 0 ns

HZOE [9]

GHQZ

Output Disable to Output Inactive 10 10 12 ns

PU [6]

ELICCH

Chip Enable to Power Active 0 0 0 ns

PD [6]

EHICCL

Chip Disable to Power Standby 25 35 45 ns

Switching Waveforms

Figure 7. SRAM Read Cycle 1: Address Controlled

[7, 8]

Figure 8. SRAM Read Cycle 2: CE and OE Controlled

[7]

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Notes

7. WE and HSB must be High during SRAM Read cycles.

8. Device is continuously selected with CE and OE both Low.

9. Measured ±200 mV from steady state output voltage.

[+] Feedback

STK12C68

Document Number: 001-51027 Rev. ** Page 10 of 20

SRAM Write Cycle

Parameter Description 25 ns 35 ns 45 ns Unit

Min Max Min Max Min Max

Cypress

Parameter Alt

AVAV

Write Cycle Time 25 35 45 ns

PWE

WLWH,

WLEH

Write Pulse Width 20 25 30 ns

SCE

ELWH,

ELEH

Chip Enable To End of Write 20 25 30 ns

DVWH,

DVEH

Data Setup to End of Write 10 12 15 ns

WHDX,

EHDX

Data Hold After End of Write 0 0 0 ns

AVWH,

AVEH

Address Setup to End of Write 20 25 30 ns

AVWL,

AVEL

Address Setup to Start of Write 0 0 0 ns

WHAX,

EHAX

Address Hold After End of Write 0 0 0 ns

HZWE [9,10]

WLQZ

Write Enable to Output Disable 10 13 14 ns

LZWE [9]

WHQX

Output Active After End of Write 5 5 5 ns

Switching Waveforms

Figure 9. SRAM Write Cycle 1: WE Controlled

[11, 12]

Figure 10. SRAM Write Cycle 2: CE Controlled

[11, 12]

SCE

PWE

HZWE

LZWE

ADDRESS

DATA IN

DATA OUT

DATA VALID

HIGH IMPEDANCE

PREVIOUS DATA

ADDRESS

SCE

PWE

DATA IN

DATA OUT HIGH IMPEDANCE

DATA VALID

Notes

10.If WE is Low when CE goes Low, the outputs remain in the high impedance state.

11. HSB must be high during SRAM Write cycles.

12.CE or WE must be greater than V

during address transitions.

[+] Feedback

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