Cypress Semiconductor CY7C1386DV25 Manuel utilisateur

18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM

CY7C1386DV25, CY7C1386FV25

CY7C1387DV25, CY7C1387FV25

Cypress Semiconductor Corporation • 198 Champion Court • San Jose,CA 95134-1709 • 408-943-2600

Document Number: 38-05548 Rev. *E Revised Feburary 15, 2007

Features

• Supports bus operation up to 250 MHz

• Available speed grades are 250, 200, and 167 MHz

• Registered inputs and outputs for pipelined operation

• Optimal for performance (Double-Cycle deselect)

• Depth expansion without wait state

•2.5V+

5% power supply (VDD)

• Fast clock-to-output times, 2.6 ns (for 250 MHz device)

• Provides high-performance 3-1-1-1 access rate

• User selectable burst counter supporting Intel® Pentium®

interleaved or linear burst sequences

• Separate processor and controller address strobes

• Synchronous self timed writes

• Asynchronous output enable

• CY7C1386DV25/CY7C1387DV25 available in

JEDEC-standard Pb-free 100-pin TQFP, Pb-free and non

Pb-free 165-ball FBGA package.

CY7C1386FV25/CY7C1387FV25 available in Pb-free and

non Pb-free 119-ball BGA package

• IEEE 1149.1 JTAG-Compatible Boundary Scan

• ZZ sleep mode option

Functional Description [1]

The CY7C1386DV25/CY7C1387DV25/CY7C1386FV25/

CY7C1387FV25 SRAM integrates 512K x 36 and 1M x 18

SRAM cells with advanced synchronous peripheral circuitry

and a two-bit counter for internal burst operation. All

synchronous inputs are gated by registers controlled by a

positive edge triggered clock input (CLK). The synchronous

inputs include all addresses, all data inputs, address-pipelining

chip enable (CE1), depth expansion chip enables (CE2and

CE3 [2]), burst control inputs (ADSC, ADSP, and ADV), write

enables (BWX, and BWE), and global write (GW).

Asynchronous inputs include the output enable (OE) and the

ZZ pin.

Addresses and chip enables are registered at rising edge of

clock when either address strobe processor (ADSP) or

address strobe controller (ADSC) are active. Subsequent

burst addresses can be internally generated as controlled by

the advance pin (ADV).

Address, data inputs, and write controls are registered on-chip

to initiate a self timed write cycle.This part supports byte write

operations (see Pin Definitions on page 6 and Truth Table [4,

5, 6, 7, 8, 9] on page 9 for further details). Write cycles can be

one to four bytes wide as controlled by the byte write control

inputs. GW active LOW causes all bytes to be written. This

device incorporates an additional pipelined enable register

which delays turning off the output buffers an additional cycle

when a deselect is executed.This feature allows depth

expansion without penalizing system performance.

The CY7C1386DV25/CY7C1387DV25/CY7C1386FV25/

CY7C1387FV25 operates from a +2.5V power supply. All

inputs and outputs are JEDEC-standard and

JESD8-5-compatible.

Selection Guide

250 MHz 200 MHz 167 MHz Unit

Maximum Access Time 2.6 3.0 3.4 ns

Maximum Operating Current 350 300 275 mA

Maximum CMOS Standby Current 70 70 70 mA

Notes

1. For best practices or recommendations, please refer to the Cypress application note AN1064, SRAM System Design Guidelines on www.cypress.com.

2. CE3, CE2are for TQFP and 165 FBGA packages only. 119 BGA is offered only in 1 chip enable.

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CY7C1386DV25, CY7C1386FV25

CY7C1387DV25, CY7C1387FV25

Document Number: 38-05548 Rev. *E Page 2 of 30

Logic Block Diagram – CY7C1386DV25/CY7C1386FV25 [3] (512K x 36)

Logic Block Diagram – CY7C1387DV25/CY7C1387FV25 [3] (1M x 18)

ADDRESS

ADV

CLK

BURST

COUNTER AND

LOGIC

CLR

ADSP

ADSC

MODE

BWE

DQP

BYTE

WRITE REGISTER

,DQP

BYTE

WRITE REGISTER

,DQP

BYTE

WRITE REGISTER

DQP

BYTE

WRITE REGISTER

ENABLE

OUTPUT

REGISTERS

SENSE

AMPS

MEMORY

ARRAY

OUTPUT

BUFFERS

DQP

BYTE

WRITE DRIVER

,DQP

BYTE

WRITE DRIVER

,DQP

BYTE

WRITE DRIVER

DQP

BYTE

WRITE DRIVER

INPUT

REGISTERS

A0,A1,A

A[1:0]

CONTROL

DQs

DQP

ADDRESS

ADV

CLK BURST

COUNTER AND

CLR

ADSC

DQP

BYTE

WRITE REGISTER

A ,

DQP

BYTE

WRITE REGISTER

ENABLE

SENSE

AMPS

MEMORY

ARRAY

ADSP

[1:0]

MODE

BWE

PIPELINED

ENABLE

DQP

OUTPUT

REGISTERS

INPUT

REGISTERS

OUTPUT

BUFFERS

B ,

DQP

BYTE

DQP

BYTE

SLEEP

CONTROL

A0, A1, A

Note

3. CY7C1386FV25 and CY7C1387FV25 have only 1 chip enable (CE1).

[+] Feedback

CY7C1386DV25, CY7C1386FV25

CY7C1387DV25, CY7C1387FV25

Document Number: 38-05548 Rev. *E Page 3 of 30

Pin Configurations

NC/72M

NC/36M

VSS

VDD

DQPB

DQB

VDDQ

VSSQ

DQB

VSSQ

VDDQ

DQB

VSS

VDD

DQA

VDDQ

VSSQ

DQA

VSSQ

VDDQ

DQA

DQPA

DQPC

DQC

VDDQ

VSSQ

DQC

VSSQ

VDDQ

DQC

VDD

VSS

DQD

VDDQ

VSSQ

DQD

VSSQ

VDDQ

DQD

DQPD

CE1

CE2

BWD

BWC

BWB

BWA

CE3

VDD

VSS

CLK

BWE

ADSC

ADSP

ADV

100

MODE

CY7C1386DV25

(512K X 36)

NC/72M

NC/36M

VSS

VDD

VDDQ

VSSQ

DQPA

DQA

VSSQ

VDDQ

DQA

VSS

VDD

DQA

VDDQ

VSSQ

DQA

VSSQ

VDDQ

VSSQ

DQB

VSSQ

VDDQ

DQB

VDD

VSS

DQB

VDDQ

VSSQ

DQB

DQPB

VSSQ

VDDQ

CE1

CE2

BWB

BWA

CE3

VDD

VSS

CLK

BWE

ADSC

ADSP

ADV

100

MODE

CY7C1387DV25

(1M x 18)

100-pin TQFP Pinout (3 Chip Enables)

[+] Feedback

CY7C1386DV25, CY7C1386FV25

CY7C1387DV25, CY7C1387FV25

Document Number: 38-05548 Rev. *E Page 4 of 30

Pin Configurations (continued)

2345671

VDDQ

NC/288M

NC/144M

DQPC

DQC

DQD

DQC

DQD

AA AA

ADSP VDDQ

DQC

VDDQ

DQC

VDDQ

DQD

VDDQ

VDD

CLK

VDD

VSS

NC/576M

NC/1G

TDOTCKTDITMS

NC/36MNC/72M

VDDQ

AAA

DQA

DQC

DQA

DQB

DQA

DQB

VDD

DQC

VDD

DQD

ADSC

CE1

ADV

VSS

VSS DQPA

MODE

DQPD

DQPB

BWB

BWC

NC VDD NC

BWA

BWE

BWD

2345671

VDDQ

NC/288M

NC/144M

NCDQB

DQB

AA AA

ADSP VDDQ

VDDQ

NC/72M

VDDQ

VDD

CLK

VDD

VSS

NC/576M

NC/1G

TDOTCKTDITMS

VDDQ

A NC/36M A

DQA

DQB

DQA

VDD

DQB

VDD

DQB

ADSC

CE1

ADV

VSS

VSS NC

MODE

DQPB

DQPA

BWB

NC VDD NC

BWA

BWE

CY7C1387FV25 (1M x 18)

CY7C1386FV25 (512K x 36)

119-Ball BGA (1 Chip Enable)

[+] Feedback

CY7C1386DV25, CY7C1386FV25

CY7C1387DV25, CY7C1387FV25

Document Number: 38-05548 Rev. *E Page 5 of 30

Pin Configurations (continued)

165-Ball FBGA Pinout (3 Chip Enable)

CY7C1386DV25 (512K x 36)

234 5671

TDO

NC/288M

NC/144M

DQPC

DQC

DQPD

DQD

CE1BWBCE3

BWCBWE

ACE2

DQC

DQD

MODE

DQC

DQD

NC/36M

NC/72M

VDDQ

BWDBWACLK GW

VSS VSS VSS VSS

VDDQ VSS

VDD VSS

VSS

VDDQ

VDD VSS

VDD VSS VSS

VDDQ VDD

VSS

VDD

VSS

VDD VSS VSS

VSS

VDD

VDD VSS

VDD VSS VSS

TCK

VSS

TDI

DQCVSS

DQC

VSS

DQD

VDDQ

VSS

TMS

891011

ADV A

ADSC NC

OE ADSP ANC/576M

VSS VDDQ NC/1G DQPB

VDDQ

VDD DQB

DQB

DQA

VDD VDDQ

VDD VDDQ DQB

VDD

DQA

VDD VDDQ DQA

VDDQ

VDD

VDD VDDQ

VDD VDDQ DQA

VDDQ

VSS

DQB

DQA

DQPA

DQA

VDDQ

CY7C1387DV25 (1M x 18)

VSS

234 5671

TDO

NC/288M

NC/144M

DQPB

DQB

ACE1NC CE3

BWBBWE

ACE2

DQB

MODE

DQB

NC/36M

NC/72M

VDDQ

NC BWACLK GW

VSS VSS VSS VSS

VDDQ VSS

VDD VSS

VSS

VDDQ

VDD VSS

VDD VSS VSS

VDDQ VDD

VSS

VDD

VSS

VDD ‘VSS VSS

VSS

VDD

VDD VSS

VDD VSS VSS

TCKA0

VSS

TDI

DQBVSS

NC VSS

DQB

VSS

DQB

VDDQ

VSS

TMS

891011

ADV A

ADSC A

OE ADSP ANC/576M

VSS VDDQ NC/1G DQPA

VDDQ

VDD NC

DQA

VDD VDDQ

VDD VDDQ DQA

VDD

NCVDD VDDQ DQA

VDDQ

VDD

VDD VDDQ

VDD VDDQ NC

VDDQ

VSS

DQA

VDDQ

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CY7C1387DV25, CY7C1387FV25

Document Number: 38-05548 Rev. *E Page 6 of 30

Pin Definitions

Name IO Description

A0, A1, A Input-

Synchronous

Address inputs used to select one of the address locations. Sampled at the

rising edge of the CLK if ADSP or ADSC is active LOW, and CE1,CE2, and CE3 [2]

are sampled active. A1: A0 are fed to the two-bit counter..

BWA, BWB

BWC, BWD

Input-

Synchronous

Byte write select inputs, active LOW. Qualified with BWE to conduct byte writes

to the SRAM. Sampled on the rising edge of CLK.

GW Input-

Synchronous

Global write enable input, active LOW. When asserted LOW on the rising edge

of CLK, a global write is conducted (all bytes are written, regardless of the values

on BWXand BWE).

BWE Input-

Synchronous

Byte write enable input, active LOW. Sampled on the rising edge of CLK. This

signal must be asserted LOW to conduct a byte write.

CLK Input-

Clock

Clock input. Used to capture all synchronous inputs to the device. Also used to

increment the burst counter when ADV is asserted LOW, during a burst operation.

CE1Input-

Synchronous

Chip enable 1 input, active LOW. Sampled on the rising edge of CLK. Used in

conjunction with CE2and CE3 [2] to select or deselect the device. ADSP is ignored

if CE1is HIGH. CE1is sampled only when a new external address is loaded.

CE2 [2] Input-

Synchronous

Chip enable 2 input, active HIGH. Sampled on the rising edge of CLK. Used in

conjunction with CE1and CE3 [2] to select or deselect the device. CE2is sampled

only when a new external address is loaded.

CE3 [2] Input-

Synchronous

Chip enable 3 input, active LOW. Sampled on the rising edge of CLK. Used in

conjunction with CE1 and CE2to select or deselect the device. Not connected for

BGA. Where referenced, CE3 [2] is assumed active throughout this document for

BGA. CE3 is sampled only when a new external address is loaded.

OE Input-

Asynchronous

Output enable, asynchronous input, active LOW. Controls the direction of the

IO pins. When LOW, the IO pins behave as outputs. When deasserted HIGH, DQ

pins are tri-stated, and act as input data pins. OE is masked during the first clock

of a read cycle when emerging from a deselected state.

ADV Input-

Synchronous

Advance input signal, sampled on the rising edge of CLK, active LOW. When

asserted, it automatically increments the address in a burst cycle.

ADSP Input-

Synchronous

Address strobe from processor, sampled on the rising edge of CLK, active

LOW. When asserted LOW, addresses presented to the device are captured in the

address registers. A1: A0 are also loaded into the burst counter. When ADSP and

ADSC are both asserted, only ADSP is recognized. ASDP is ignored when CE1is

deasserted HIGH.

ADSC Input-

Synchronous

Address strobe from controller, sampled on the rising edge of CLK, active

LOW. When asserted LOW, addresses presented to the device are captured in the

address registers. A1: A0 are also loaded into the burst counter. When ADSP and

ADSC are both asserted, only ADSP is recognized.

ZZ Input-

Asynchronous

ZZ sleep input, active HIGH. When asserted HIGH places the device in a

non-time-critical sleep condition with data integrity preserved. For normal operation,

this pin has to be LOW or left floating. ZZ pin has an internal pull down.

DQs, DQPs IO-

Synchronous

Bidirectional data IO lines. As inputs, they feed into an on-chip data register that

is triggered by the rising edge of CLK. As outputs, they deliver the data contained

in the memory location specified by the addresses presented during the previous

clock rise of the read cycle. The direction of the pins is controlled by OE. When OE

is asserted LOW, the pins behave as outputs. When HIGH, DQs and DQPXare

placed in a tri-state condition.

VDD Power Supply Power supply inputs to the core of the device.

[+] Feedback

CY7C1386DV25, CY7C1386FV25

CY7C1387DV25, CY7C1387FV25

Document Number: 38-05548 Rev. *E Page 7 of 30

Functional Overview

All synchronous inputs pass through input registers controlled

by the rising edge of the clock. All data outputs pass through

output registers controlled by the rising edge of the clock.

The CY7C1386DV25/CY7C1387DV25/CY7C1386FV25/

CY7C1387FV25 supports secondary cache in systems using

either a linear or interleaved burst sequence. The interleaved

burst order supports Pentium®and i486™processors. The

linear burst sequence is suited for processors that use a linear

burst sequence. The burst order is user selectable, and is

determined by sampling the MODE input. Accesses can be

initiated with either the processor address strobe (ADSP)or

the controller address strobe (ADSC). Address advancement

through the burst sequence is controlled by the ADV input. A

two-bit on-chip wraparound burst counter captures the first

address in a burst sequence and automatically increments the

address for the rest of the burst access.

Byte write operations are qualified with the byte write enable

(BWE) and byte write select (BWX) inputs. A global write

enable (GW) overrides all byte write inputs and writes data to

all four bytes. All writes are simplified with on-chip

synchronous self timed write circuitry.

Synchronous chip selects CE1, CE2, CE3 [2] and an

asynchronous output enable (OE) provide for easy bank

selection and output tri-state control. ADSP is ignored if CE1

is HIGH.

Single Read Accesses

This access is initiated when the following conditions are

satisfied at clock rise: (1) ADSP or ADSC is asserted LOW, (2)

chip selects are all asserted active, and (3) the write signals

(GW, BWE) are all deasserted HIGH. ADSP is ignored if CE1

is HIGH. The address presented to the address inputs is

stored into the address advancement logic and the address

corresponding data is allowed to propagate to the input of the

output registers. At the rising edge of the next clock the data

is allowed to propagate through the output register and onto

the data bus within tCO if OE is active LOW. The only exception

occurs when the SRAM is emerging from a deselected state

to a selected state, its outputs are always tri-stated during the

first cycle of the access. After the first cycle of the access, the

outputs are controlled by the OE signal. Consecutive single

read cycles are supported.

The CY7C1386DV25/CY7C1387DV25/CY7C1386FV25/

CY7C1387FV25 is a double-cycle deselect part. Once the

SRAM is deselected at clock rise by the chip select and either

ADSP or ADSC signals, its output will tri-state immediately

after the next clock rise.

Single Write Accesses Initiated by ADSP

This access is initiated when both of the following conditions

are satisfied at clock rise: (1) ADSP is asserted LOW, and (2)

chip select is asserted active. The address presented is

loaded into the address register and the address

advancement logic while being delivered to the memory core.

VSS Ground Ground for the core of the device.

VSSQ IO Ground Ground for the IO circuitry.

VDDQ IO Power Supply Power supply for the IO circuitry.

MODE Input-

Static

Selects burst order. When tied to GND selects linear burst sequence. When tied

to VDD or left floating selects interleaved burst sequence. This is a strap pin and

must remain static during device operation. Mode pin has an internal pull up.

TDO JTAG serial output

Synchronous

Serial data-out to the JTAG circuit. Delivers data on the negative edge of TCK.

If the JTAG feature is not used, this pin must be disconnected. This pin is not

available on TQFP packages.

TDI JTAG serial input

Synchronous

Serial data-in to the JTAG circuit. Sampled on the rising edge of TCK. If the JTAG

feature is not used, this pin can be disconnected or connected to VDD. This pin is

not available on TQFP packages.

TMS JTAG serial input

Synchronous

Serial data-in to the JTAG circuit. Sampled on the rising edge of TCK. If the JTAG

feature is not used, this pin can be disconnected or connected to VDD. This pin is

not available on TQFP packages.

TCK JTAG-

Clock

Clock input to the JTAG circuitry. If the JTAG feature is not used, this pin must

be connected to VSS. This pin is not available on TQFP packages.

NC – No Connects. Not internally connected to the die

NC/(36M, 72M, 144M,

288M, 576M, 1G)

–These pins are not connected. They will be used for expansion to the 36M, 72M,

144M, 288M, 576M, and 1G densities.

Pin Definitions (continued)

Name IO Description

[+] Feedback

CY7C1386DV25, CY7C1386FV25

CY7C1387DV25, CY7C1387FV25

Document Number: 38-05548 Rev. *E Page 8 of 30

The write signals (GW, BWE, and BWX) and ADV inputs are

ignored during this first cycle.

ADSP triggered write accesses require two clock cycles to

complete. If GW is asserted LOW on the second clock rise, the

data presented to the DQxinputs is written into the

corresponding address location in the memory core. If GW is

HIGH, then the write operation is controlled by BWE and BWX

signals.

The CY7C1386DV25/CY7C1387DV25/CY7C1386FV25/

CY7C1387FV25 provides byte write capability that is

described in the write cycle description table. Asserting the

byte write enable input (BWE) with the selected byte write

input will selectively write to only the desired bytes. Bytes not

selected during a byte write operation will remain unaltered. A

synchronous self timed write mechanism has been provided

to simplify the write operations.

The CY7C1386DV25/CY7C1387DV25/CY7C1386FV25/

CY7C1387FV25 is a common IO device, the output enable

(OE) must be deasserted HIGH before presenting data to the

DQ inputs. Doing so will tri-state the output drivers. As a safety

precaution, DQ are automatically tri-stated whenever a write

cycle is detected, regardless of the state of OE.

Single Write Accesses Initiated by ADSC

ADSC write accesses are initiated when the following

conditions are satisfied: (1) ADSC is asserted LOW, (2) ADSP

is deasserted HIGH, (3) chip select is asserted active, and (4)

the appropriate combination of the write inputs (GW, BWE,

and BWX) are asserted active to conduct a write to the desired

byte(s). ADSC triggered write accesses require a single clock

cycle to complete. The address presented is loaded into the

address register and the address advancement logic while

being delivered to the memory core. The ADV input is ignored

during this cycle. If a global write is conducted, the data

presented to the DQXis written into the corresponding address

location in the memory core. If a byte write is conducted, only

the selected bytes are written. Bytes not selected during a byte

write operation will remain unaltered. A synchronous self

timed write mechanism has been provided to simplify the write

operations.

The CY7C1386DV25/CY7C1387DV25/CY7C1386FV25/

CY7C1387FV25 is a common IO device, the output enable

(OE) must be deasserted HIGH before presenting data to the

DQXinputs. Doing so will tri-state the output drivers. As a

safety precaution, DQXare automatically tri-stated whenever

a write cycle is detected, regardless of the state of OE.

Burst Sequences

The CY7C1386DV25/CY7C1387DV25/CY7C1386FV25/

CY7C1387FV25 provides a two-bit wraparound counter, fed

by A[1:0], that implements either an interleaved or linear burst

sequence. The interleaved burst sequence is designed

specifically to support Intel Pentium applications. The linear

burst sequence is designed to support processors that follow

a linear burst sequence. The burst sequence is user selectable

through the MODE input.

Asserting ADV LOW at clock rise will automatically increment

the burst counter to the next address in the burst sequence.

Both read and write burst operations are supported.

Sleep Mode

The ZZ input pin is an asynchronous input. Asserting ZZ

places the SRAM in a power conservation sleep mode. Two

clock cycles are required to enter into or exit from this sleep

mode. While in this mode, data integrity is guaranteed.

Accesses pending when entering the sleep mode are not

considered valid nor is the completion of the operation

guaranteed. The device must be deselected prior to entering

the sleep mode. CEs, ADSP, and ADSC must remain inactive

for the duration of tZZREC after the ZZ input returns LOW.

Interleaved Burst Address Table

(MODE = Floating or VDD)

First

Address

A1: A0

Second

Address

A1: A0

Third

Address

A1: A0

Fourth

Address

A1: A0

00 01 10 11

01 00 11 10

10 11 00 01

11 10 01 00

Linear Burst Address Table (MODE = GND)

First

Address

A1: A0

Second

Address

A1: A0

Third

Address

A1: A0

Fourth

Address

A1: A0

00 01 10 11

01 10 11 00

10 11 00 01

11 00 01 10

[+] Feedback

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Document Number: 38-05548 Rev. *E Page 9 of 30

ZZ Mode Electrical Characteristics

Parameter Description Test Conditions Min. Max. Unit

IDDZZ Sleep mode standby current ZZ > VDD – 0.2V 80 mA

tZZS Device operation to ZZ ZZ > VDD – 0.2V 2tCYC ns

tZZREC ZZ recovery time ZZ < 0.2V 2tCYC ns

tZZI ZZ Active to sleep current This parameter is sampled 2tCYC ns

tRZZI ZZ Inactive to exit sleep current This parameter is sampled 0 ns

Truth Table [4, 5, 6, 7, 8, 9]

Operation Add. Used CE1CE2CE3ZZ ADSP ADSC ADV WRITE OE CLK DQ

Deselect Cycle, Power Down None H X X L X L X X X L-H Tri-State

Deselect Cycle, Power Down None L L X L L X X X X L-H Tri-State

Deselect Cycle, Power Down None L X H L L X X X X L-H Tri-State

Deselect Cycle, Power Down None L L X L H L X X X L-H Tri-State

Deselect Cycle, Power Down None L X H L H L X X X L-H Tri-State

Sleep Mode, Power Down None X X X H X X X X X X Tri-State

READ Cycle, Begin Burst External L H L L L X X X L L-H Q

READ Cycle, Begin Burst External L H L L L X X X H L-H Tri-State

WRITE Cycle, Begin Burst External L H L L H L X L X L-H D

READ Cycle, Begin Burst External L H L L H L X H L L-H Q

READ Cycle, Begin Burst External L H L L H L X H H L-H Tri-State

READ Cycle, Continue Burst Next X X X L H H L H L L-H Q

READ Cycle, Continue Burst Next X X X L H H L H H L-H Tri-State

READ Cycle, Continue Burst Next H X X L X H L H L L-H Q

READ Cycle, Continue Burst Next H X X L X H L H H L-H Tri-State

WRITE Cycle, Continue Burst Next X X X L H H L L X L-H D

WRITE Cycle, Continue Burst Next H X X L X H L L X L-H D

READ Cycle, Suspend Burst Current X X X L H H H H L L-H Q

READ Cycle, Suspend Burst Current X X X L H H H H H L-H Tri-State

READ Cycle, Suspend Burst Current H X X L X H H H L L-H Q

READ Cycle, Suspend Burst Current H X X L X H H H H L-H Tri-State

WRITE Cycle, Suspend Burst Current X X X L H H H L X L-H D

WRITE Cycle, Suspend Burst Current H X X L X H H L X L-H D

Notes

4. X = Don't Care, H = Logic HIGH, L = Logic LOW.

5. WRITE = L when any one or more byte write enable signals and BWE = L or GW = L. WRITE = H when all byte write enable signals, BWE, GW = H.

6. The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.

7. CE1, CE2, and CE3are available only in the TQFP package. BGA package has only 2 chip selects CE1and CE2.

8. The SRAM always initiates a read cycle when ADSP is asserted, regardless of the state of GW, BWE, or BWX. Writes may occur only on subsequent clocks after

the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the write cycle to allow the outputs to tri-state. OE is a don't

care for the remainder of the write cycle.

9. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle all data bits are tri-state when OE is

inactive or when the device is deselected, and all data bits behave as output when OE is active (LOW).

[+] Feedback

CY7C1386DV25, CY7C1386FV25

CY7C1387DV25, CY7C1387FV25

Document Number: 38-05548 Rev. *E Page 10 of 30

Partial Truth Table for Read/Write [5, 10]

Function (CY7C1386DV25/CY7C1386FV25) GW BWE BWDBWCBWBBWA

Read HHXXXX

Read HLHHHH

Write Byte A – (DQA and DQPA) HLHHHL

Write Byte B – (DQB and DQPB)HLHHLH

Write Bytes B, A H L H H L L

Write Byte C – (DQCand DQPC) HLHLHH

Write Bytes C, A H L H L H L

Write Bytes C, B H L H L L H

Write Bytes C, B, A H L H L L L

Write Byte D – (DQD and DQPD) HL LHHH

Write Bytes D, A H L L H H L

Write Bytes D, B H L L H L H

Write Bytes D, B, A H L L H L L

Write Bytes D, C H L L L H H

Write Bytes D, C, A H L L L H L

WriteBytesD,C,B HLLLLH

WriteAllBytes HLLLLL

WriteAllBytes LXXXXX

Truth Table for Read/Write [5, 10]

Function (CY7C1387DV25/CY7C1387FV25) GW BWE BWBBWA

Read H H X X

Read H L H H

Write Byte A – (DQA and DQPA)HLHL

Write Byte B – (DQBand DQPB)HLLH

Write All Bytes H L L L

Write All Bytes L X X X

Note

10. Table only lists a partial listing of the byte write combinations. Any combination of BWX is valid appropriate write will be done based on which byte write is active.

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