Cypress CY62128EV30 Manuel utilisateur

CY62128EV30

MoBL® 1 Mbit (128K x 8) Static RAM

Cypress Semiconductor Corporation • 198 Champion Court • San Jose,CA 95134-1709 • 408-943-2600

Document #: 38-05579 Rev. *D Revised March 28, 2008

Features

■Very high speed: 45 ns

❐Temperature ranges:

• Industrial: –40°C to +85°C

• Automotive-A: –40°C to +85°C

• Automotive-E: –40°C to +125°C

■Wide voltage range: 2.20V – 3.60V

■Pin compatible with CY62128DV30

■Ultra low standby power

❐Typical standby current: 1 μA

❐Maximum standby current: 4 μA

■Ultra low active power

❐Typical active current: 1.3 mA @ f = 1 MHz

■Easy memory expansion with CE1, CE2and OE features

■Automatic power down when deselected

■CMOS for optimum speed and power

■Offered in Pb-free 32-pin SOIC, 32-pin TSOP I, and 32-pin

STSOP packages

Functional Description

The CY62128EV30[1] is a high performance CMOS static RAM

module organized as 128K words by 8 bits. This device features

advanced circuit design to provide ultra low active current. This

is ideal for providing More Battery Life™ (MoBL®) in portable

applications such as cellular telephones. The device also has an

automatic power down feature that significantly reduces power

consumption when addresses are not toggling. Placing the

device into standby mode reduces power consumption by more

than 99% when deselected (CE1HIGH or CE2LOW). The eight

input and output pins (IO0through IO7) are placed in a high

impedance state when the device is deselected (CE1 HIGH or

CE2LOW), the outputs are disabled (OE HIGH), or a write

operation is in progress (CE1 LOW and CE2HIGH and WE

LOW).

To write to the device, take Chip Enable (CE1 LOW and CE2

HIGH) and Write Enable (WE) inputs LOW. Data on the eight IO

pins is then written into the location specified on the Address pin

(A0through A16).

To read from the device, take Chip Enable (CE1 LOW and CE2

HIGH) and Output Enable (OE) LOW while forcing Write Enable

(WE) HIGH. Under these conditions, the contents of the memory

location specified by the address pins appear on the IO pins.

IO0

IO7

IO1

IO2

IO3

IO4

IO5

IO6

A12

SENSE AMPS

POWER

DOWN

A13

A14

A15

A16

ROW DECODER

COLUMN DECODER

128K x 8

ARRAY

INPUT BUFFER

A10

A11

CE1

CE2

Logic Block Diagram

Note

1. For best practice recommendations, refer to the Cypress application note “System Design Guidelines” at http://www.cypress.com.

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CY62128EV30

Document #: 38-05579 Rev. *D Page 2 of 11

Pin Configuration[2]

STSOP

Top View

(not to scale)

GND

TSOP I

Top View

(not to scale)

GND

14 19

Top View

SOIC

15 17

GND

A16

A14

A12

VCC

A15

A13

IO 7

IO 6

IO 5

IO 4

IO 0

IO 1

IO 2

CE1

A10

IO 3

A11

CE2

Table 1. Product Portfolio

Product Range VCC Range (V) Speed

(ns)

Power Dissipation

Operating ICC (mA) Standby ISB2 (µA)

f = 1 MHz f = fmax

Min Typ[3] Max Typ[3] Max Typ[3] Max Typ[3] Max

CY62128EV30LL Ind’l/Auto-A 2.2 3.0 3.6 45 1.3 2.0 11 16 1 4

CY62128EV30LL Auto-E 2.2 3.0 3.6 55 1.3 4.0 11 35 1 30

Notes

2. NC pins are not connected on the die.

3. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA= 25°C.

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CY62128EV30

Document #: 38-05579 Rev. *D Page 3 of 11

Maximum Ratings

Exceeding maximum ratings may impair the useful life of the

device. These user guidelines are not tested.

Storage Temperature.................................. –65°C to +150°C

Ambient Temperature with

Power Applied ............................................ –55°C to +125°C

Supply Voltage to Ground

Potential..........................................–0.3V to VCC(max) + 0.3V

DC Voltage Applied to Outputs

in High-Z State[4, 5] .........................–0.3V to VCC(max) + 0.3V

DC Input Voltage[4,5].......................–0.3V to VCC(max) + 0.3V

Output Current into Outputs (LOW).............................20 mA

Static Discharge Voltage.......................................... > 2001V

(MIL-STD-883, Method 3015)

Latch up Current.....................................................> 200 mA

Operating Range

Device Range Ambient

Temperature VCC[6]

CY62128EV30LL Ind’l/Auto-A –40°C to +85°C 2.2V to

3.6V

Auto-E –40°C to +125°C

Electrical Characteristics

(Over the Operating Range)

Parameter Description Test Conditions 45 ns (Ind’l/Auto-A) 55 ns (Auto-E) Unit

Min Typ[3] Max Min Typ[3] Max

VOH Output HIGH Voltage IOH = –0.1 mA 2.0 2.0 V

IOH = –1.0 mA, VCC >2.70V

2.4 2.4 V

VOL Output LOW Voltage IOL = 0.1 mA 0.4 0.4 V

IOL = 2.1 mA, VCC >2.70V 0.4 0.4 V

VIH Input HIGH Voltage VCC = 2.2V to 2.7V 1.8 VCC +

0.3V 1.8 VCC +

0.3V V

VCC= 2.7V to 3.6V 2.2 VCC +

0.3V 2.2 VCC +

0.3V V

VIL Input LOW Voltage VCC = 2.2V to 2.7V –0.3 0.6 –0.3 0.6 V

VCC= 2.7V to 3.6V –0.3 0.8 –0.3 0.8 V

IIX Input Leakage Current GND <VI< VCC –1 +1 –4 +4 μA

IOZ Output Leakage Current GND <VO <VCC,Output Disabled –1 +1 –4 +4 μA

ICC VCC Operating Supply

Current f = fmax = 1/tRC VCC = VCCmax

IOUT = 0 mA

CMOS levels

11 16 11 35 mA

f = 1 MHz 1.3 2.0 1.3 4.0 mA

ISB1 Automatic CE

Power down

Current — CMOS Inputs

CE1> VCC−0.2V, CE2< 0.2V

VIN >VCC–0.2V, VIN <0.2V)

f = fmax (Address and Data Only),

f = 0 (OE and WE), VCC = 3.60V

14 135μA

ISB2[7] Automatic CE

Power down

Current — CMOS Inputs

CE1> VCC – 0.2V, CE2< 0.2V

VIN > VCC – 0.2V or VIN < 0.2V,

f = 0, VCC = 3.60V

14 130μA

Notes

4. VIL(min) = –2.0V for pulse durations less than 20 ns.

5. VIH(max) = VCC+0.75V for pulse durations less than 20 ns.

6. Full device AC operation assumes a 100 μs ramp time from 0 to VCC(min) and 200 μs wait time after VCC stabilization.

7. Only chip enables (CE1and CE2) must be at CMOS level to meet the ISB2 / ICCDR spec. Other inputs can be left floating.

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CY62128EV30

Document #: 38-05579 Rev. *D Page 4 of 11

Capacitance

(For all packages)[8]

Parameter Description Test Conditions Max Unit

CIN Input Capacitance TA= 25°C, f = 1 MHz,

VCC = VCC(typ) 10 pF

COUT Output Capacitance 10 pF

Note

8. Tested initially and after any design or process changes that may affect these parameters.

9. Full device AC operation requires linear VCC ramp from VDR to VCC(min) > 100 μs or stable at VCC(min) >100 μs.

Thermal Resistance

Parameter Description Test Conditions TSOP I SOIC STSOP Unit

ΘJA Thermal Resistance

(Junction to Ambient) Still Air, soldered on a 3 x 4.5 inch,

two-layer printed circuit board 33.01 48.67 32.56 °C/W

ΘJC Thermal Resistance

(Junction to Case) 3.42 25.86 3.59 °C/W

Figure 1. AC Test Loads and Waveforms

VCC

OUTPUT

30 pF

INCLUDING

JIG AND

SCOPE

GND 90%

10% 90%

10%

Rise Time = 1 V/ns Fall Time = 1 V/ns

OUTPUT V

Equivalentto: THEVENIN EQUIVALENT

ALL INPUT PULSES

RTH

Parameters 2.50V 3.0V Unit

R1 16667 1103 Ω

R2 15385 1554 Ω

RTH 8000 645 Ω

VTH 1.20 1.75 V

Data Retention Characteristics

(Over the Operating Range)

Parameter Description Conditions Min Typ[3] Max Unit

VDR VCC for Data Retention 1.5 V

ICCDR[7] Data Retention Current VCC = 1.5V,

CE1> VCC − 0.2V or CE2< 0.2V,

VIN > VCC − 0.2V or VIN < 0.2V

Ind’l/Auto-A 3 μA

Auto-E 30 μA

tCDR[8] Chip Deselect to Data Retention

Time 0ns

tR[9] Operation Recovery Time tRC ns

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Document #: 38-05579 Rev. *D Page 5 of 11

Data Retention Waveform [10]

Switching Characteristics

(Over the Operating Range)[10, 11]

Parameter Description 45 ns (Ind’l/Auto-A) 55 ns (Auto-E) Unit

Min Max Min Max

Read Cycle

tRC Read Cycle Time 45 55 ns

tAA Address to Data Valid 45 55 ns

tOHA Data Hold from Address Change 10 10 ns

tACE CE LOW to Data Valid 45 55 ns

tDOE OE LOW to Data Valid 22 25 ns

tLZOE OE LOW to Low Z[12] 55ns

tHZOE OE HIGH to High Z[12,13] 18 20 ns

tLZCE CE LOW to Low Z[12] 10 10 ns

tHZCE CE HIGH to High Z[12, 13] 18 20 ns

tPU CE LOW to Power Up 00ns

tPD CE HIGH to Power Up 45 55 ns

Write Cycle[14]

tWC Write Cycle Time 45 55 ns

tSCE CE LOW to Write End 35 40 ns

tAW Address Setup to Write End 35 40 ns

tHA Address Hold from Write End 0 0 ns

tSA Address Setup to Write Start 0 0 ns

tPWE WE Pulse Width 35 40 ns

tSD Data Setup to Write End 25 25 ns

tHD Data Hold from Write End 0 0 ns

tHZWE WE LOW to High Z[12, 13] 18 20 ns

tLZWE WE HIGH to Low Z[12] 10 10 ns

VCC(min)

tCDR

VDR >1.5V

DATA RETENTION MODE

VCC

Notes

10.CE is the logical combination of CE1and CE2. When CE1is LOW and CE2 is HIGH, CE is LOW; when CE1is HIGH or CE2is LOW, CE is HIGH.

11. Test Conditions for all parameters other than tri-state parameters assume signal transition time of 3 ns or less (1 V/ns), timing reference levels of VCC(typ)/2, input

pulse levels of 0 to VCC(typ), and output loading of the specified IOL/IOH as shown in the “AC Test Loads and Waveforms” on page 4.

12.At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.

13.tHZOE, tHZCE, and tHZWE transitions are measured when the output enter a high impedance state.

14.The internal write time of the memory is defined by the overlap of WE, CE = VIL. All signals must be ACTIVE to initiate a write and any of these signals can

terminate a write by going INACTIVE. The data input setup and hold timing should be referenced to the edge of the signal that terminates the write.

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CY62128EV30

Document #: 38-05579 Rev. *D Page 6 of 11

Switching Waveforms

Figure 2. Read Cycle 1 (Address transition controlled) [15, 16]

Figure 3. Read Cycle No. 2 (OE controlled) [10, 16, 17]

Figure 4. Write Cycle No. 1 (WE controlled) [10, 15, 18, 19]

PREVIOUS DATA VALID DATA VALID

tAA

tOHA

tRC

ADDRESS

DATA OUT

50%

DATA VALID

tRC

tACE

tDOE

tLZOE

tLZCE

tPU

HIGH IMPEDANCE

tHZOE tHZCE

tPD

IMPEDANCE

ICC

ISB

HIGH

ADDRESS

DATA OUT

VCC

SUPPLY

CURRENT

DATA VALID

tHD

tSD

tPWE

tSA

tHA

tAW

tSCE

tWC

tHZOE

ADDRESS

DATA IO

NOTE

Notes

15.The device is continuously selected. OE, CE1= VIL, CE2= VIH.

16.WE is HIGH for read cycle.

17.Address valid before or similar to CE1transition LOW and CE2transition HIGH.

18.Data IO is high impedance if OE = VIH.

19.If CE1goes HIGH or CE2goes LOW simultaneously with WE HIGH, the output remains in high impedance state.

20.During this period, the IOs are in output state. Do not apply input signals.

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CY62128EV30

Document #: 38-05579 Rev. *D Page 7 of 11

Figure 5. Write Cycle No. 2 (CE1 or CE2 controlled) [10, 14, 18, 19]

Figure 6. Write Cycle No. 3 (WE controlled, OE LOW) [10, 19]

Switching Waveforms (continued)

tWC

DATA VALID

tAW

tSA

tPWE

tHA

tHD

tSD

tSCE

ADDRESS

DATA IO

DATA VALID

tHD

tSD

tLZWE

tPWE

tSA

tHA

tAW

tSCE

tWC

tHZWE

ADDRESS

DATA IO

NOTE

Table 2. Truth Table for CY62128EV30

CE1CE2WE OE Inputs/Outputs Mode Power

H X X X High Z Deselect/Power Down Standby (ISB)

X L X X High Z Deselect/Power Down Standby (ISB)

L H H L Data Out Read Active (ICC)

L H H H High Z Output Disabled Active (ICC)

L H L X Data in Write Active (ICC)

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CY62128EV30

Document #: 38-05579 Rev. *D Page 8 of 11

Ordering Information

Speed

(ns) Ordering Code Package

Diagram Package Type Operating

Range

45 CY62128EV30LL-45SXI 51-85081 32-pin 450-Mil SOIC (Pb-free) Industrial

CY62128EV30LL-45ZXI 51-85056 32-pin TSOP Type I (Pb-free)

CY62128EV30LL-45ZAXI 51-85094 32-pin STSOP (Pb-free)

45 CY62128EV30LL-45ZXA 51-85056 32-pin TSOP Type I (Pb-free) Automotive-A

55 CY62128EV30LL-55ZXE 51-85056 32-pin TSOP Type I (Pb-free) Automotive-E

Contact your local Cypress sales representative for availability of these parts.

Package Diagrams

Figure 7. 32-Pin (450 Mil) Molded SOIC, 51-85081

0.546[13.868]

0.440[11.176]

0.101[2.565]

0.050[1.270]

0.014[0.355]

0.118[2.997]

0.004[0.102]

0.047[1.193]

0.006[0.152]

0.023[0.584]

0.793[20.142]

0.450[11.430]

0.566[14.376]

0.111[2.819]

0.817[20.751]

BSC.

0.020[0.508]

MIN.

MAX.

0.012[0.304]

0.039[0.990]

0.063[1.600]

SEATING PLANE

116

17 32

0.004[0.102]

51-85081-*B

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CY62128EV30

Document #: 38-05579 Rev. *D Page 9 of 11

Figure 8. 32-Pin Thin Small Outline Package Type I (8 x 20 mm), 51-85056

Package Diagrams (continued)

51-85056-*D

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CY62128EV30

Document #: 38-05579 Rev. *D Page 10 of 11

Figure 9. 32-Pin Shrunk Thin Small Outline Package (8 x 13.4 mm), 51-85094

Package Diagrams (continued)

51-85094-*D

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