ST STEVAL-IPMnM1S Manuel utilisateur

Introduction

The STEVAL-IPMnM1S is a compact motor drive power board based on SLLIMM-nano SMD (small low-loss intelligent molded

module) product (STIPNS1M50T-H). It provides an affordable and easy-to-use solution for driving high power motors in a wide

range of applications such as power white goods, air conditioning, compressors, power fans and 3-phase inverters for motor

drives in general.

The IPM itself consists of six MOSFETs, three high voltage half-bridge gate driver ICs and a wide range of features like

undervoltage lockout, smart shutdown, internal temperature sensor and NTC, overcurrent protection and internal op-amp.

The main characteristics of this evaluation board are small size, minimal BOM and high efficiency. It features an interface circuit

(BUS and VCC connectors), bootstrap capacitors, snubber capacitor, hardware short-circuit protection, fault event signal and

temperature monitoring. It is designed to work in single- or three-shunt configuration and with triple current sensing options:

three dedicated on-board op-amps, op-amps embedded on MCU or single internal IPM op-amp. The Hall/Encoder part

completes the circuit.

The system is designed to achieve accurate and fast conditioning of current feedback to satisfy the typical requirements for field

oriented control (FOC).

The STEVAL-IPMnM1S is compatible with ST’s control board based on STM32, providing a complete platform for motor control.

Figure 1. Motor control board (top view) based on SLLIMM-nano SMD

STEVAL-IPMnM1S motor control power board based on the SLLIMM™-nano

SMD of MOSFET IPMs

UM2467

User manual

UM2467 - Rev 1 - September 2018

For further information contact your local STMicroelectronics sales office.

www.st.com

1General safety instructions

Danger:

The evaluation board works with high voltage which could be deadly for the users. Furthermore all

circuits on the board are not isolated from the line input. Due to the high power density, the

components on the board as well as the heat sink can be heated to a very high temperature,

which can cause a burning risk when touched directly. This board is intended for use by

experienced power electronics professionals who understand the precautions that must be taken

to ensure that no danger or risk may occur while operating this board.

Caution: After the operation of the evaluation board, the bulk capacitor C1 (if used) may still store a high energy for

several minutes. So it must be first discharged before any direct touching of the board.

Important:

To protect the bulk capacitor C1, we strongly recommended using an external brake chopper after C1 (to discharge the high

brake current back from the induction motor).

UM2467

General safety instructions

UM2467 - Rev 1 page 2/30

2Key features

• Input voltage: from 125 to 400 VDC

• Nominal power: up to 60 W

• Nominal current: up to 0.6 A

• Input auxiliary voltage: up to 20 VDC

• Single- or three-shunt resistors for current sensing (with sensing network)

• Three options for current sensing: dedicated external op-amps, internal SLLIMM-nano SMD op-amp (single)

or via MCU

• Overcurrent hardware protection

• IPM temperature monitoring and protection

• Hall sensor or encoder input

• MOSFETs intelligent power module:

– SLLIMM-nano IPM (STIPNS1M50T-H) - SMD package

• Motor control connector (32 pins) interfacing with ST MCU boards

• Universal design for further evaluation with breadboard and testing pins

• Very compact size

• WEEE compliant

• RoHS compliant

UM2467

Key features

UM2467 - Rev 1 page 3/30

3Circuit schematics

The full schematics for the SLLIMM-nano SMD card for STIPNS1M50T-H IPM products is shown below. This card

consists of an interface circuit (BUS and VCC connectors), bootstrap capacitors, snubber capacitor, short-circuit

protection, fault output circuit, temperature monitoring, single-/three-shunt resistors and filters for input signals. It

also includes bypass capacitors for VCC and bootstrap capacitors. The capacitors are located very close to the

drive IC to avoid malfunction due to noise.

Three current sensing options are provided: three dedicated onboard op-amps, one internal IPM op-amp and the

embedded MCU op-amps; selection is performed through three jumpers.

The Hall/Encoder section (powered at 5 V or 3.3 V) completes the circuit.

3.1 Schematic diagrams

Figure 2. STEVAL-IPMnM1S - circuit schematic (1 of 5)

UM2467

Circuit schematics

UM2467 - Rev 1 page 4/30

Figure 3. STEVAL-IPMnM1S - circuit schematic (2 of 5)

UM2467

Schematic diagrams

UM2467 - Rev 1 page 5/30

Figure 4. STEVAL-IPMnM1S - circuit schematic (3 of 5)

LED Red

Phase C - input

0 0

0p 0p

R10

0P4

Phase B - input

Phase A - input

R8 1k0

R14 1k0 0

0p 0p

R19 1k0

R13 1k0 6

0p 0p

R15 1k0

nano OP+

nano OPOUT

nano OP-

STIPNS1M50T-H

IPM module

D/OD

OP+

OPOUT

OP-

D/OD1

boo

TP19

TP10

TP13

TP18

TP9

TP17

0400V

R16 R17 R18

0.68 1W 0.68 1W 0.68 1W

1_SHUNT 1_SHUNT

6TP16

TP11

phase _A

phase _B

phase _C

3_SHUNT

UM2467

Schematic diagrams

UM2467 - Rev 1 page 6/30

Figure 5. STEVAL-IPMnM1S - circuit schematic (4 of 5)

UM2467

Schematic diagrams

UM2467 - Rev 1 page 7/30

Figure 6. STEVAL-IPMnM1S - circuit schematic (5 of 5)

Hall/Encoder

M_phase_A

M_phase_C

M_phase_B

3.3V

+5V

3.3V

+5V

R42

4k7

R392k4

Encoder/Hall

SW12

C37

10p

SW15

C34

100n

SW13

SW10

R40

4k7

SW9

R34

4k7

R41

4k7

R35

4k7

C33

100n

C35

10p

R372k4

SW14

R382k4

C32

100n

SW16

R36

4k7

SW11

C36

10p

UM2467

Schematic diagrams

UM2467 - Rev 1 page 8/30

4Main characteristics

The board is designed for a 125 VDC to 400 VDC supply voltage.

An appropriate bulk capacitor for the power level of the application must be mounted at the dedicated position on

the board.

The SLLIMM-nano SMD integrates six MOSFET switches with freewheeling diodes and high voltage gate drivers.

Thanks to this integrated module, the system offers power inversion in a simple and compact design that requires

less PCB area and increases reliability.

The board offers the added flexibility of being able to operate in single- or three-shunt configuration by modifying

solder bridge jumper settings (see Section 5.3.4 Single- or three-shunt selection).

Figure 7. STEVAL-IPMnM1S architecture

UM2467

Main characteristics

UM2467 - Rev 1 page 9/30

5Filters and key parameters

5.1 Input signals

The input signals (LINx and HINx) to drive the internal MOSFETs are active high. A 375 kΩ (typ.) pull-down

resistor is built-in for each input signal. To prevent input signal oscillation, an RC filter is added on each input as

close as possible to the IPM. The filter is designed using a time constant of 10 ns (1 kΩ and 10 pF).

5.2 Bootstrap capacitor

In the 3-phase inverter, the emitters of the low side MOSFETs are connected to the negative DC bus (VDC-) as

common reference ground, which allows all low side gate drivers to share the same power supply, while the

emitter of the high side MOSFETs is alternatively connected to the positive (VDC+) and negative (VDC-) DC bus

during running conditions.

A bootstrap method is a simple and cheap solution to supply the high voltage section. This function is normally

accomplished by a high voltage fast recovery diode. The SLLIMM-nano SMD MOSFET-based family includes a

patented integrated structure that replaces the external diode with a high voltage DMOS functioning as a diode

with series resistor. An internal charge pump provides the DMOS driving voltage.

The value of the CBOOT capacitor should be calculated according to the application requirements.

Figure 8. CBOOT graph selection shows the behavior of CBOOT (calculated) versus switching frequency (fsw), with

different values of ∆VCBOOT for a continuous sinusoidal modulation and a duty cycle δ = 50%.

Note: This curve is taken from application note AN4840 (available on www.st.com); calculations are based on the

STGIP5C60T-Hyy device, which represents the worst case scenario for this kind of calculation.

The boot capacitor must be two or three times larger than the CBOOT calculated in the graph.

For this design, a value of 2.2 µF was selected.

Figure 8. CBOOT graph selection

UM2467

Filters and key parameters

UM2467 - Rev 1 page 10/30

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