International Rectifier Photosmart 335 Manuel utilisateur

IRF1104

PRELIMINARY HEXFET®Power MOSFET

Fifth Generation HEXFETs from International Rectifier utilize advanced

processingtechniquestoachieveextremelylow on-resistancepersiliconarea.

This benefit, combined with the fast switching speed and ruggedized device

design that HEXFET Power MOSFETs are well known for, provides the

designerwithanextremelyefficientandreliabledeviceforuseinawidevariety

of applications.

The TO-220 package is universally preferred for all commercial-industrial

applications at power dissipation levels to approximately 50 watts. The low

thermal resistance and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

Parameter Max. Units

ID@ TC= 25°C ContinuousDrain Current, VGS @10V 100

ID@ TC= 100°C ContinuousDrain Current,VGS @ 10V 71 A

IDM PulsedDrain Current400

PD @TC= 25°C PowerDissipation 170 W

LinearDeratingFactor 1.11 W/°C

VGS Gate-to-SourceVoltage ± 20 V

EAS SinglePulseAvalancheEnergy350 mJ

IAR AvalancheCurrent60 A

EAR RepetitiveAvalancheEnergy17 mJ

dv/dt Peak Diode Recovery dv/dt 5.0 V/ns

TJOperatingJunctionand -55 to + 175

TSTG Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C

Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

Absolute Maximum Ratings

Parameter Typ. Max. Units

RθJC Junction-to-Case ––– 0.90

RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W

RθJA Junction-to-Ambient ––– 62

Thermal Resistance

VDSS = 40V

RDS(on) = 0.009Ω

ID= 100A

TO-220AB

lAdvanced Process Technology

lUltra Low On-Resistance

lDynamic dv/dt Rating

l175°C Operating Temperature

lFast Switching

lFully Avalanche Rated

Description

4/24/98

www.irf.com 1

PD- 9.1724A

IRF1104

2 www.irf.com

Parameter Min. Typ. Max. Units Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID= 250µA

∆V(BR)DSS/∆TJBreakdownVoltageTemp.Coefficient ––– 0.038 ––– V/°C Reference to 25°C, ID= 1mA

RDS(on) StaticDrain-to-SourceOn-Resistance ––– ––– 0.009 ΩVGS = 10V, ID= 60A 

VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID= 250µA

gfs ForwardTransconductance 37 ––– ––– S VDS = 25V, ID= 60A

––– ––– 25 µA VDS = 40V, VGS = 0V

––– ––– 250 VDS = 32V, VGS = 0V, TJ= 150°C

Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V

Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V

QgTotalGateCharge ––– ––– 93 ID= 60A

Qgs Gate-to-SourceCharge ––– ––– 29 nC VDS = 32V

Qgd Gate-to-Drain("Miller")Charge ––– ––– 30 VGS = 10V, See Fig. 6 and 13 

td(on) Turn-On Delay Time ––– 15 ––– VDD = 20V

trRiseTime ––– 114 ––– ID= 60A

td(off) Turn-OffDelayTime ––– 28 ––– RG= 3.6Ω

tfFallTime ––– 19 ––– RD= 0.33Ω, See Fig. 10 

Between lead,

––– ––– 6mm (0.25in.)

from package

and center of die contact

Ciss Input Capacitance ––– 2900 ––– VGS = 0V

Coss Output Capacitance ––– 1100 ––– pF VDS = 25V

Crss Reverse Transfer Capacitance ––– 250 ––– ƒ = 1.0MHz, See Fig. 5

Electrical Characteristics @ TJ= 25°C (unless otherwise specified)

LDInternal Drain Inductance

LSInternal Source Inductance ––– –––

IGSS

4.5

7.5

IDSS Drain-to-Source Leakage Current

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

ISD ≤60A, di/dt ≤304A/µs, VDD ≤ V(BR)DSS,

TJ ≤175°C

Notes:

Starting TJ = 25°C, L = 194µH

RG = 25Ω, IAS = 60A. (See Figure 12)

Pulse width ≤300µs; duty cycle ≤2%.

Parameter Min. Typ. Max. Units Conditions

ISContinuous Source Current MOSFET symbol

(Body Diode) ––– ––– showing the

ISM Pulsed Source Current integral reverse

(Body Diode) 

––– ––– p-n junction diode.

VSD DiodeForwardVoltage ––– ––– 1.3 V TJ= 25°C, IS= 60A, VGS = 0V 

trr Reverse RecoveryTime ––– 74 110 ns TJ= 25°C, IF= 60A

Qrr ReverseRecoveryCharge ––– 188 280 nC di/dt = 100A/µs



ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Source-Drain Ratings and Characteristics

100

400 A

Caculated continuous current based on maximum allowable

junction temperature;for recommended current-handling of the

package refer to Design Tip # 93-4

IRF1104

www.irf.com 3

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

100

1000

0.1 1 10 100

20µs PULSE WIDTH

T = 175 C

J°

TOP

BOTTOM

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

4.5V

100

1000

0.1 1 10 100

20µs PULSE WIDTH

T = 25 C

J°

TOP

BOTTOM

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

4.5V

0.1

100

1000

4.0 5.0 6.0 7.0 8.0 9.0 10.0

V = 50V

20µs PULSE WIDTH

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

T = 175 C

J°

T = 25 C

J°

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

0.0

0.5

1.0

1.5

2.0

2.5

T , Junction Temperature( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

V =

I =

10V

100A

IRF1104

4 www.irf.com

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-SourceVoltage

Fig 5. Typical Capacitance Vs.

Drain-to-SourceVoltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

1 10 100

1000

2000

3000

4000

5000

V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

0V,

f = 1MHz

+ C

C SHORTED

iss gs gd , ds

rss gd

oss ds gd

Ciss

Coss

Crss

0.1

100

1000

0.2 0.8 1.4 2.0 2.6

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

V = 0 V

T = 25 C

J°

T = 175 C

J°

100

1000

10000

1 10 100

OPERATION IN THIS AREA LIMITED

BY RDS(on)

Single Pulse

T = 175 C

= 25 C

°°

V , Drain-to-Source Voltage (V)

I , Drain Current (A)I , Drain Current (A)

10us

100us

1ms

10ms

025 50 75 100

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

FOR TEST CIRCUIT

SEE FIGURE

I =

60A

V = 20V

V = 32V

IRF1104

www.irf.com 5

Fig 10a. Switching Time Test Circuit

90%

10%

GS t

d(on)

d(off)

Fig 10b. Switching Time Waveforms

VDS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

VGS

RGD.U.T.

10V

VDD

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.

Case Temperature

0.01

0.1

0.00001 0.0001 0.001 0.01 0.1 1

Notes:

1. Duty factor D = t / t

2. Peak T =P x Z + T

1 2

JDM thJC C

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

25 50 75 100 125 150 175

100

T , Case Temperature ( C)

I , Drain Current (A)

LIMITED BY PACKAGE

IRF1104

6 www.irf.com

Charge

D.U.T. V

3mA

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

10 V

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

(BR)DSS

0.01

Ω

D.U.T

VDS

-V

DRIVER

15V

20V

25 50 75 100 125 150 175

200

400

600

800

Starting T , Junction Temperature( C)

E , Single Pulse Avalanche Energy (mJ)

TOP

BOTTOM

24A

42A

60A

IRF1104

www.irf.com 7

P.W. Period

di/dt

Diode Recovery

dv/dt

Ripple ≤5%

Body Diode Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current Body Diode Forward

Current

=10V

Driver Gate Drive

D.U.T. I

Waveform

D.U.T. V

Waveform

Inductor Curent

D = P.W.

Period

Fig 14. For N-Channel HEXFETS

*VGS = 5V for Logic Level Devices

Peak Diode Recovery dv/dt Test Circuit







RGVDD

• dv/dt controlled by RG

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer



IRF1104

8 www.irf.com

LEAD ASSIGNMENTS

1 - GATE

2 - DRAIN

3 - SOURCE

4 - DRAIN

- B -

1.32 (.052)

1.22 (.048)

3X 0.55 (.022)

0.46 (.018)

2.92 (.115)

2.64 (.104)

4.69 (.185)

4.20 (.165)

3X 0.93 (.037)

0.69 (.027)

4.06 (.160)

3.55 (.140)

1.15 (.045)

MIN

6.47 (.255)

6.10 (.240)

3.78 (.149)

3.54 (.139)

- A -

10.54 (.415)

10.29 (.405)

2.87 (.113)

2.62 (.103)

15.24 (.600)

14.84 (.584)

14.09 (.555)

13.47 (.530)

3X 1.40 (.055)

1.15 (.045)

2.54 (.100)

0.36 (.014) M B A M

1 2 3

NOTES:

1 DIMENSIONING & TOLERANCING PER ANSIY14.5M,1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.

2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

Part Marking Information

TO-220AB

Package Outline

TO-220AB Outline

Dimensions are shown in millimeters (inches)

PART NUMBER

INTERNATIONAL

RECTIFIER

LOGO

EXAMPLE : THIS IS AN IRF1010

WITH ASSEMBLY

LOT CODE 9B1M

ASSEMBLY

LOT CODE

DATE CODE

(YYWW)

YY = YEAR

WW = WEEK

9246

IRF1010

9B 1M

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371

http://www.irf.com/ Dataand specifications subject to changewithout notice. 4/98

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