IEPC EPC9067 Manuel utilisateur

Development Board

EPC9067

Quick Start Guide

EPC8009

65 V Half Bridge with Sync FET Bootstrap Gate Drive

QUICK START GUIDE

Demonstration System EPC9067

DESCRIPTION

The EPC9067 development board is a 65 V maximum device voltage,

2.7 A maximum output current, half bridge with onboard gate drives,

featuring the EPC8009 enhancement mode (eGaN®) eld eect transistor

(FET). The gate driver has been congured with a synchronous FET

bootstrap circuit featuring the EPC2038 eGaN FET that eliminates high

side device losses induced by the reverse recovery losses of the internal

bootstrap diode of the gate driver. The purpose of this development

board is to simplify the evaluation process of the EPC8009 eGaN FET by

including all the critical components on a single board that can be easily

connected into any existing converter. The inclusion of the synchronous

FET bootstrap circuit enables signicant increase in operating frequency

capability of the half bridge circuit.

The EPC9067 development board is 2” x 1.5”and has two EPC8009 eGaN

FETs in a half bridge conguration using Texas Instruments LM5113 gate

driver with supply and bypass capacitors. The board contains all critical

components and layout for optimal switching performance. There are

also various probe points to facilitate simple waveform measurement

and eciency calculation. The board includes pads for the inclusion of

customer components to facilitate testing in a Buck converter or ZVS

class-D amplier congurations. A complete block diagram of the circuit

is given in gure 1.

For more information on the EPC8009 and EPC2038 eGaN FETs please

refer to the datasheet available from EPC at www.epc-co.com. The

datasheet should be read in conjunction with this quick start guide.

Table 1: Performance Summary (TA= 25°C) EPC9067

Symbol Parameter Conditions Min Max Units

VDD Gate Drive Input Supply

Range 7.5 12 V

VIN Bus Input Voltage Range 52* V

VOUT Switch Node Output Voltage 65 V

IOUT Switch Node Output Current 2.7* A

VPWM PWM Logic Input Voltage

Threshold

Input ‘High’

Input ‘Low’

3.5

1.5

Minimum ‘High’State Input

Pulse Width

VPWM rise and

fall time < 10ns 40 ns

Minimum ‘Low’ State Input

Pulse Width

VPWM rise and

fall time < 10ns 160#ns

*Assumes inductive load, maximum current depends on die temperature – actual maximum current

with be subject to switching frequency, bus voltage and thermals.

# Limited by time needed to ‘refresh’ high side bootstrap supply voltage.

QUICK START PROCEDURE

Development board EPC9067 is easy to set up to evaluate the performance

of the EPC8009 eGaN FET. Refer to gure 2 for proper connect and

measurement setup and follow the procedure below:

1. Congure the board for either ZVS class-D operation OR Buck converter

operation.

2. With power o, connect the input power supply bus to +VIN (J1) and

ground / return to –VIN (J4).

3. For ZVS class-D operation, with power o, connect a HF load to the HF

output (RF-J2 OR Vsw-J3 and GND-J4). For Buck converter operation,

with power o, connect a DC load to the DC output (+VOUT -J5 and

GND-J4).

4. With power o, connect the gate drive input to +VDD (J90, Pin-1) and

ground return to –VDD (J90, Pin-2).

5. With power o, connect the input PWM control signal to PWM (J70,

Pin-1) and ground return to either Pin-2 or Pin-4 of J70.

6. Turn on the gate drive supply – make sure the supply is within the

7.5 V and 12 V range.

7. Turn on the controller / PWM input source and probe switching node to

observe switching operation.

8. Turn on the bus voltage to the required value (do not exceed the

absolute maximum voltage of 52 V on VOUT). Increase voltage slowly

while monitoring operation to ensure the FETs are operating within

their datasheet parameters.

9. Once operational, adjust the bus voltage and load PWM control

within the operating range and observe the output switching

behavior, eciency and other parameters.

10. For shutdown, please follow steps in reverse.

NOTE. When measuring the high frequency content switch node, care

must be taken to avoid long ground leads. Measure the switch node by

placing the oscilloscope probe tip through the large via on the switch

node (designed for this purpose) and grounding the probe directly

across the GND terminal provided. See gure 3 for proper scope probe

technique.

EPC9067 development board

QUICK START GUIDE

Demonstration System EPC9067

Figure 2: Proper connection and measurement setup

Figure 3: Proper measurement of the switch node

Figure 1: Block diagram of EPC9067 development board

CBypass

Level shift

PGND

Gate drive

regulator

Logic and

dead-time

adjust

VDD

GND

PWM

LBuck

COUT

CZVS

DC output

LZVS

HF output

7.5 – 12 V

VIN supply

(note polarity)

High frequency

connection

Switch-node

oscilloscope probe

Ground post

Dead-time

setting

(if installed)

DC output

measurement

Main voltage

measurement

52 VDCmax

VMain supply

(note polarity)

DC output

Control signal

inputs

SMA(optional)

Do not use

probe ground lead

Ground probe

against post

Place probe tip

in large via Minimize loop

QUICK START GUIDE

Demonstration System EPC9067

Table 2: Bill of Materials - Amplier Board

Item Qty Reference Part Description Manufacturer/Part Number

1 1 C40 Capacitors, Ceramic, 4.7 µF, 10 V, ±20%, X5R Samsung, CL05A475MP5NRNC

2 3 C4, C5, C6 Capacitors, Ceramic, 1.0 µF, 100 V, ±10%, X7S TDK, C2012X7S2A105K125AB

3 3 C95, C96, C97 Capacitors, Ceramic, 1.0 µF, 25 V, ±10%, X5R Murata, GRM188R61E105KA12D

4 2 C71, C72 Capacitors, Ceramic, 100 nF, 25 V, ±10%, X7R TDK, C1005X7R1E104K050BB

5 2 C41, C44 Capacitors, Ceramic, 100 nF, 16 V, ±10%, X7R Murata, GRM155R71C104KA88D

6 1 C45 Capacitors, Ceramic, 22 nF, 25 V, ±10%, X7R TDK, C1005X7R1E223K050BB

7 3 C1, C2, C3 Capacitors, Ceramic, 10 nF, 100 V, ±20%, X7S TDK, C1005X7S2A103M050BB

8 2 C42, C43 Capacitors, Ceramic, 22 pF, 50 V, ±5%, NPO TDK, C1005C0G1H220J050BA

9 1 R46 Resistors, 27 KΩ, ±1%, 1/10 W Panasonic, ERJ-2RKF2702X

10 1 R70 Resistors, 10.0 KΩ, ±1%, 1/10 W Panasonic, ERJ-6ENF1002V

11 1 R74 Resistors, 191 Ω, ±1%, 1/10 W Panasonic, ERJ-2RKF1910X

12 1 R75 Resistors, 56 Ω, ±1%, 1/10 W Panasonic, ERJ-2RKF56R0X

13 1 R45 Resistors, 20 Ω, ±1%, 1/16 W Stackpole, RMCF0402FT20R0

14 1 R44 Resistors, 4.7 Ω, ±1%, ±/16 W Yageo, RC0402FR-074R7L

15 3 D45, D74, D75 Diodes, Schottky Diode, 30 V, VF=370 mV @ 1 mA, 30 mA Diodes Inc, SDM03U40-7

16 1 D40 Diodes, Schottky, 100 V, 0.2 A, VF=1 V @ 200 mA ST Microelectronics, BAT41KFILM

17 1 D41 Diodes, Zener, 5.1 V, 150 mW ±5% Bourns Inc., CD0603-Z5V1

18 1 Q44 eGaN® FET, 100 V, 500 mA, RDS(on) =2.1 Ω @ 50 mA, 5 V EPC, EPC2038

19 2 Q1, Q2 eGaN® FET, 65 V, 4.1A, RDS(on) =138 mΩ @ 500 mA, 5 V EPC, EPC8009

20 1 U95 IC's, 5 V LDO, 250 mA, up to 16VIN, Vdropout=0.33 V @ 250 mA Microchip, MCP1703T-5002E/MC

21 1 U40 IC's, Gate driver, 5.2 VDC, 1.2 A, 4.5 V to 5.5 V

Texas Instruments, LM5113TME/NOPB

22 1 U72 IC's, Logic 2 NAND Gate, 1.65 V to 5.5 V, ± 24 mA

Fairchild, NC7SZ00L6X

23 1 U71 IC's, 2 Input AND Gate, Tiny Logic, 1.65 V to 5.5 V, ± 32 mA Fairchild, NC7SZ08L6X

24 4 TP1, TP2, TP3, TP4 Test Point, Test Point Subminiature

Keystone, 5015

25 0.19 J70, J90, GP1 (See Note 1) Headers, Male Vertical, 36 Pin. 230" Contact Height, .1" Center Pitch FCI, 68001-236HLF

26 4 J1, J3, J4, J5 Headers, 2 Rows by 2 Pins .1" Male Vertical, .1" Center Pitch TE Connectivity, 5-146256-2

Optional Components

Item Qty Reference Part Description Manufacturer/Part Number

1 1 C7 Capacitors, DNP, Ceramic, 1.0 µF, 100 V, ±10%, X7S TDK, C2012X7S2A105K125AB

2 1 C46 Capacitor, DNP, Ceramic, 100 nF, 16 V, ±10%, X7R Murata, GRM155R71C104KA88D

3 3 R71, R72, R73 Resistor, DNP, 0 Ω, 1/10 W, Jumper Panasonic, ERJ-3GEY0R00V

4 2 P74, P75 Potentiometer, DNP, Multi-turn Potentiometer, 1 kΩ, ±10%, 1/4 W, 12 Turn

Top Adjustment Small Murata, PV37W102C01B00

5 1 Lbuck Inductor, DNP, 10 μH, ±20%, 3.5 A, 33 mΩ, Resonance=40 MHz, Frequency

Tested=100 KHz Wϋrth, 744314101

6 1 Lzvs Inductor, DNP, 500 nH, , Q=180, 50 MHz, DCR=16.5 mΩ, IRMS=4.3 A Coilcraft, 2929SQ-501JEB

7 1 D44 Diodes, DNP, Schottky Diode, 30 V, VF=370 mV @ 1 mA, 30 mA Diodes Inc, SDM03U40-7

8 1 J2 Connector, DNP, RP-SMA Plug, 50 Ω Linx, CONREVSMA013.062

9 1 HS1 Hardware, DNP, W= (0.590") 15 mm, by L= (0.590") 15 mm, H=(0.374")

9.5 mm, 26.2°C/W @ 200 LFM Advanced Thermal Solutions, ATS-54150D-C2-R0

Note 1 (36 pin Header to be cut as follows) J70 cut 4 pins used, J90 cut 2 pins used, GP1 cut 1 pin used

THERMAL CONSIDERATIONS

The EPC9067 development board showcases the EPC8009 eGaN FET.

Although the electrical performance surpasses that for traditional

Si devices, their relatively smaller size does magnify the thermal

management requirements. The EPC9067 is intended for bench

evaluation with low ambient temperature and convection cooling.

The addition of heat-sinking and forced air cooling can signicantly

increase the current rating of these devices, but care must be taken to

not exceed the absolute maximum die temperature of 125°C.

NOTE. The EPC9067 development board does not have any current or thermal

protection on board.

QUICK START GUIDE

Demonstration System EPC9067

Figure 4: EPC9067 - Schematic

GRH1

5 VHS 1

5 V

GL H1

U40

L M5 113T M

GRH1

GL H1

D74

SDM03U4 0

D75

SDM0 3U4 0

C72

5 V

C71

5 V

10 K

R70

Deadtime Right

Deadtime Left

U72

NC 7S Z00L 6X

U71

NC 7S Z08L 6X

5 V

.1” Male Vert.

2 x 2 .1” Male Vert.

.1” Male Vert.

2 x 2 .1” Male Vert.

J90

Logic Supply Regulator

V7 in

C95

1 μF, 25 V

100 nF, 25 V

1 μF, 25 V

C96

U95

MCP1703T-5002E/MC

5.0 V, 250 mA DFN

OUT

GND

C97

Logic Supply

7.5 VDC - 12 VDC

GRre t1

PWM1

L _Sig

H_Sig

PGND

DNP 500 nH

Lzvs

GRre t1

SMA Board Edge

H_Sig

L _Sig

C42

C43

GP1

ProbeHole

PH1

T P1

T P2

Vmain

Q1GRre t1

PGND

GRH1

GL H1

Vmain

Vmain Vma in

Vmain

J70

PWM1

PWM2

DNP

R73

1 2

R72

PWM2

PWM1

DNP 0 Ω

1 2

R71

PWM1

EPC8009

DNP

L buck

D40

BAT5 4 K F IL M

PGND

Vmain

PGND

Vmain

5 V

4.7 V

GL H1

PGND

C40

HS 1

DNP

C2 C3

Output

Gbtst

Q44

EPC2038

100 V, 2.8 Ω

R45

SDM0 3U4 0

D44

E MP T Y

C46

E MP T Y

D41

CD 0603-Z5V1

D45

SDM0 3U4 0

C45

C41

27 K

R46

4E 7

1 2

R44

100 nF, 16 V

C44

SW Output

Buck Output

ZVS Tank Circuit

HF Output

Main Supply Input

GND

T P4

PGND

T P3 Output

V7 in

DNP 220 Ω

20 Ω

DNP 100 Ω

1 2

R75

1 2

R74

P75

DNP 1 K

P74

Gate Driver

Ground Post

22 pF, 50 V

4.7 μF, 10 V

1 μF, 100 V

10 nF, 100 V 10 nF, 100 V

100 nF, 16 V

10 nF, 100 V

1 μF, 100 V

22 nF, 25 V

SMD probe loop

Synchronous Bootstrap Power Supply

EPC Products are distributed through Digi-Key.

www.digikey.com

For More Information:

Please contact info@epc-co.com

or your local sales representative

Visit our website:

www.epc-co.com

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Demonstration Board Warning and Disclaimer

The EPC9067 board is intended for product evaluation purposes only and is not intended for commercial use. Replace components on the Evaluation Board only with those parts shown on

the parts list (or Bill of Materials) in the Quick Start Guide. Contact an authorized EPC representative with any questions.

This board is intended to be used by certied professionals, in a lab environment, following proper safety procedures. Use at your own risk.

As an evaluation tool, this board is not designed for compliance with the European Union directive on electromagnetic compatibility or any other such directives or regulations. As board

builds are at times subject to product availability, it is possible that boards may contain components or assembly materials that are not RoHS compliant. Ecient Power Conversion

Corporation (EPC) makes no guarantee that the purchased board is 100% RoHS compliant.

The Evaluation board (or kit) is for demonstration purposes only and neither the Board nor this Quick Start Guide constitute a sales contract or create any kind of warranty, whether express

or implied, as to the applications or products involved.

Disclaimer: EPC reserves therightatanytime,without notice, to makechanges to anyproducts describedhereintoimprovereliability, function, or design. EPCdoes notassume any liability

arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, or other intellectual property whatsoever, nor the

rights of others.

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