EPC EPC9036 Manuel utilisateur

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DESCRIPTION

These development boards are in a monolithic half- bridge topology with on-board gate drives,

featuring the EPC2100/1/5 eGaNICs (Enhancement-mode Gallium Nitride Integrated Circuit).

The purpose of these development boards is to simplify the evaluation process of these

monolithically integrated eGaN FETs by including all the critical components on a single board

that can be easily connected into any existing converter.

The development board is 2” x 2” and contains one eGaNIC in half-bridge conguration using the

Texas Instruments LM5113 gate driver, supply and bypass capacitors. The board contains all critical

components and layout for optimal switching performance and has additional area to add buck

output lter components on board. There are also various probe points to facilitate simple wave-

form measurement and eciency calculation. A complete block diagram of the circuit is given in

Figure 1.

For more information on the EPC2100/1/5 eGaNICs, please refer to the datasheets available from

EPC at www.epc-co.com. The datasheet should be read in conjunction with this quick start guide.

Development Board

EPC9036/37/41

Quick Start Guide

Monolithic Half-Bridge with

Gate Drive for EPC2100/1/5

Demonstration Board Notication

These boards are intended for product evaluation purposes only and are not intended for commercial use. As evaluation tools, they are not designed for compliance with the European Union directive on

electromagnetic compatibility or any other such directives or regulations. As board builds are at times subject to product availability, it is possible that boards may contain components or assembly materials

that are not RoHS compliant. Ecient Power Conversion Corporation (EPC) makes no guarantee that the purchased board is 100% RoHS compliant. No Licenses are implied or granted under any patent

right or other intellectual property whatsoever. EPC assumes no liability for applications assistance, customer product design, software performance, or infringement of patents or any other intellectual

property rights of any kind.

EPC reserves the right at any time, without notice, to change said circuitry and specications.

Symbol Parameter Conditions Min Max Units

VDD Gate Drive Input Supply Range 7 12 V

VIN Bus Input Voltage Range

When using 30 V devices, EPC9036 24* V

When using 60 V devices, EPC9037 48* V

When using 80 V devices, EPC9041 64* V

VOUT Switch Node Output Voltage

When using 30 V devices, EPC9036 30* V

When using 60 V devices, EPC9037 60* V

When using 80 V devices, EPC9041 80* V

IOUT Switch Node Output Current

When using 30 V devices, EPC9036 28* A

When using 60 V devices, EPC9037 22* A

When using 80 V devices, EPC9041 20* A

VPWM

PWM Logic Input Voltage

Threshold

Input ‘High’ 3.5 6 V

Input ‘Low’ 0 1.5 V

Minimum ‘High’ State Input

Pulse Width

VPWM rise and fall time < 10ns 50 ns

Minimum ‘Low’State Input Pulse

Width

VPWM rise and fall time < 10ns 100# ns

**Maximum input voltage depends on inductive loading, Maximum switch node ringing must be kept under device rated voltage.

* Maximum current depends on die temperature – actual maximum current with be subject to switching frequency, bus voltage and thermal cooling. eGaNIC

intended for high step-down ratio applications.

# Limited by time needed to‘refresh’high side bootstrap supply voltage.

Table 1: Performance Summary (TA = 25°C)

QUICK START GUIDE

EPC9037/37/41

QUICK START PROCEDURE

The development boards are easy to set up to evaluate the perfor-

mance of the eGaNIC. The board allows the on-board placement of

buck output lter components. Refer to Figure 2 for proper connect

and measurement setup and follow the procedure below:

1. With power o, connect the input power supply bus to +VIN (J5, J6)

and ground / return to –VIN (J7, J8).

2. With power o, connect the switch node of the half bridge OUT

(J3, J4) to your circuit as required.

3. With power o, connect the gate drive input to +VDD (J1, Pin-1) and

ground return to –VDD (J1, Pin-2).

4. With power o, connect the input PWM control signal to PWM

(J2, Pin-1) and ground return to any of the remaining J2 pins.

5. Turn on the gate drive supply – make sure the supply is between

7 V and 12 V range.

6. Turn on the bus voltage to the required value (do not exceed the

absolute maximum voltage on VOUT as indicated in the table below:

a. EPC9036, 30 V

b. EPC9037, 60 V

c. EPC9041, 80 V

7. Turn on the controller / PWM input source and probe switching

node to see switching operation.

8. Once operational, adjust the bus voltage and load PWM control

within the operating range and observe the output switching

behavior, eciency and other parameters.

9. For shutdown, please follow steps in reverse.

NOTE. When measuring the high frequency content switch node (OUT), care must

be taken to avoid long ground leads. Measure the switch node (OUT) by placing

the oscilloscope probe tip through the large via on the switch node (designed for

this purpose) and grounding the probe directly across the GND terminals provided.

See Figure 3 for proper scope probe technique.

Figure 1: Block Diagram of Development Board

VDD

VIN

PWM

Input

OUT

VSW

Gate Drive Supply

Pads for Buck Output Filter

Monolithic

Half Bridge

Logic and

Dead-time

Adjust

Gate Drive

Regulator

LM5113

Gate

Driver

VERSION

(For Eciency

Measurement)

Gate Drive Supply

(Note Polarity)

7 V – 12V

PWM Input

VDD Supply

VIN Supply

(For Eciency

Measurement)

Pads for Buck

Output Filter

See table for max

OUT

PGND

VOUT

IIN

See table

for max

Do not use probe ground lead

Place probe tip

in large via at OUT

Minimize loop

Ground probe

againstTP3

Figure 2: Proper Connection and Measurement Setup

Figure 3: Proper Measurement of Switch Node – OUT

QUICK START GUIDE

EPC9037/37/41

THERMAL CONSIDERATIONS

The EPC9036/37/41 development boards showcase the EPC2100/1/5

eGaNIC. These development boards are intended for bench evalua-

tion with low ambient temperature and convection cooling. The ad-

dition of heat-sinking and forced air cooling can signicantly increase

Figure 4: EPC9036Typical Waveforms forVIN = 12V to 1.2 V/25 A (1000 kHz) Buck converter

showing rising and falling edges, CH4: (VOUT) Switch node voltage

750

650 ps rise time

350 MHz

ringing

3 V

ps fall time

the current rating of these devices, but care must be taken to not

exceed the absolute maximum die temperature of 150°C.

NOTE. These development boards do not have any current or thermal protection on

board.

Item Qty Reference Part Description Manufacturer

1 3 C4, C10, C11, Capacitor, 1µF, 10%, 25 V, X5R Murata, GRM188R61E105KA12D

2 2 C16, C17 Capacitor, 100pF, 5%, 50 V, NP0 Kemet, C0402C101K5GACTU

3 2 C9, C19 Capacitor, 0.1µF, 10%, 25 V, X5R TDK, C1005X5R1E104K

4 4 C21, C22, C23, C24 Capacitor - See Table 3 See Table 3

5 2 D1, D2 Schottky Diode, 30 V Diodes Inc., SDM03U40-7

6 3 J1, J2, J9 Connector 2 pins of Tyco, 4-103185-0

7 6 J3, J4, J5, J6, J7, J8 Connector FCI, 68602-224HLF

8 1 Q1 eGaNIC , - see Table 3 See Table 3

9 1 R1 Resistor, 10.0K, 5%, 1/8 W Stackpole, RMCF0603FT10K0

10 2 R2, R15 Resistor, 0 Ohm, 1/8W Stackpole, RMCF0603ZT0R00

11 1 R4 Resistor, 47 Ohm, 1%, 1/8W Stackpole, RMCF0603FT47R0

12 1 R5 Resistor, - see Table 3 See Table 3

13 4 R19, R20, R23, R24 Resistor, 0 Ohm, 1/20W Panasonic, ERJ-1GE0R00C

14 2 TP1, TP2 Test Point Keystone Elect, 5015

15 1 TP3 Connector 1/40th of Tyco, 4-103185-0

16 1 U1 I.C., Logic Fairchild, NC7SZ00L6X

17 1 U2 I.C., Gate driver Texas Instruments, LM5113

18 1 U3 I.C., Regulator Microchip, MCP1703T-5002E/MC

19 1 U4 I.C., Logic Fairchild, NC7SZ08L6X

20 0 R14 Optional Resistor

21 0 D3 Optional Diode

22 0 P1, P2 Optional Potentiometer

Table 2: Bill of Materials - Amplier Board

QUICK START GUIDE

EPC9037/37/41

Board

Number Item Qty Reference Part Description Manufacturer / Part #

EPC9036

4 4 C21, C22, C23, C24 Capacitor, 4.7µF, 10%, 50V, X5R TDK, C2012X5R1H475K125AB

8 2 Q1, Q2 eGaNIC EPC2100

12 1 R5 Resistor, 22 Ohm, 1%, 1/8W Stackpole, RMCF0603FT22R0

EPC9037

4 4 C21, C22, C23, C24 Capacitor, 1µF, 10%, 100V, X7S TDK, CGA4J3X7S2A105K125AE

8 2 Q1, Q2 eGaNIC EPC2101

12 1 R5 Resistor, 47 Ohm, 1%, 1/8W Stackpole, RMCF0603FT47R0

EPC9041

4 4 C21, C22, C23, C24 Capacitor, 1µF, 10%, 100V, X7S TDK, CGA4J3X7S2A105K125AE

8 2 Q1, Q2 eGaNIC EPC2105

12 1 R5 Resistor, 47 Ohm, 1%, 1/8W Stackpole, RMCF0603FT47R0

Table 3: Variable BOM Components

VCC

7 - 12 Vdc

1µF, 25V

C10

1µF, 25V

CON2

10k

PWM1

GND

VDD

NC7SZ00L6X

24 V

SWOUT

GND

TP3

CON1

CON4

C11

1µF, 25V

TP2

Keystone 5015

TP1

Keystone 5015

Zero

R14

Optional

R15

Zero

See Table

SDM03U40

PWM2

VCC

OUT 1

NC 2

NC 3

GND 4

GND

U3 MCP1703

CON2

Optional

GND

VDD

NC7SZ08L6X

0.1µF, 25V

C22

C23

C21

LM5113TM

C19

0.1µF, 25V

C17

100pF

C16

100pF

Optional

C24

4.7µF, 50V

1:4 HB

R19

Zero

R20

Zero

R23

Zero

R24

Zero

Development Board Schematic

EPC9036/37/41

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