SanDisk INAND Manuel utilisateur

SanDisk

Product Manual

Version 3.1

Document No. 80-36-00450

December 2006

SanDisk Corporation

Corporate Headquarters • 601 McCarthy Boulevard • Milpitas, CA 95035

Phone (408) 801-1000 • Fax (408) 801-8657

www.sandisk.com

Revision 3.1 SanDisk iNAND Product Manual

SanDisk®Corporation general policy does not recommend the use of its products in life support applications where in a failure

or malfunction of the product may directly threaten life or injury. Per SanDisk Terms and Conditions of Sale, the user of SanDisk

products in life support applications assumes all risk of such use and indemnifies SanDisk against all damages. See “Disclaimer

of Liability.”

This document is for information use only and is subject to change without prior notice. SanDisk Corporation assumes no

responsibility for any errors that may appear in this document, nor for incidental or consequential damages resulting from the

furnishing, performance or use of this material. No part of this document may be reproduced, transmitted, transcribed, stored in

a retrievable manner or translated into any language or computer language, in any form or by any means, electronic,

mechanical, magnetic, optical, chemical, manual or otherwise, without the prior written consent of an officer of SanDisk

Corporation.

All parts of the SanDisk documentation are protected by copyright law and all rights are reserved.

SanDisk and the SanDisk logo are registered trademarks of SanDisk Corporation. CompactFlash is a U.S. registered trademark

of SanDisk Corporation.

Product names mentioned herein are for identification purposes only and may be trademarks and/or registered trademarks of

their respective companies.

SanDisk products are covered or licensed under one or more of the following U.S. Patent Nos. 5,070,032; 5,095,344; 5,168,465;

5,172,338; 5,198,380; 5,200,959; 5,268,318; 5,268,870; 5,272,669; 5,418,752; 5,602,987. Other U.S. and foreign patents

awarded and pending.

Lit. No. 80-36-00450 Rev. 3.1 12/06 Printed in U.S.A.

Revision History

September 2005 Revision 0.1—First draft of initial release

October 2005 Revision 0.2—Second draft of initial release

October 2005 Revision 0.3—Third draft of initial release

October 2005 Revision 1.0—Release

November 2005 Revision 1.1—Minor revision in Section 1.2; changed area in Table 1-1

January 2006 Revision 2.0—Added 4GB specifications

February 2006 Revision 2.1—Added footnote for MB/GB calculation in Section 2, 3 & App B

November 2006 Revision 3.0—Major revision to include high capacity information and other changes to the SDA spec;

updated contact information.

December 2006 Revision 3.1—Changed G8 pin from “VCORE” to “FCAP”; adjusted capacitor specifications.

Revision 3.1 SanDisk iNAND Product Manual

TABLE OF CONTENTS

1. Introduction...................................................................................................1-1

1.1 General Description................................................................................1-1

1.2 Features...................................................................................................1-2

1.3 Document Scope.....................................................................................1-2

1.4 iNAND Standard ....................................................................................1-2

1.5 Functional Description............................................................................1-3

1.6 Technology Independence ......................................................................1-3

1.7 Defect and Error Management................................................................1-4

1.8 Wear Leveling.........................................................................................1-4

1.9 Automatic Sleep Mode ...........................................................................1-4

1.10 iNAND—SD Bus Mode........................................................................1-4

1.11 SPI Mode...............................................................................................1-6

2. Product Specifications...................................................................................2-1

2.1 Overview ................................................................................................2-1

2.2 Typical Card Power Requirements .........................................................2-1

2.3 System Performance...............................................................................2-1

2.4 System Reliability and Maintenance ......................................................2-1

2.5 Physical Specifications...........................................................................2-2

2.6 Capacity Specifications ..........................................................................2-4

3. iNAND Interface Description .......................................................................3-1

3.1 Pins and Registers...................................................................................3-1

3.2 Bus Topologies .......................................................................................3-2

3.3 Electrical Interface..................................................................................3-3

3.4 iNAND Registers....................................................................................3-3

3.5 Data Interchange Format and Card Sizes ...............................................3-3

4. iNAND Protocol Description........................................................................4-1

4.1 General ...................................................................................................4-1

4.2 SD Bus Protocol .....................................................................................4-1

4.3 Functional Description............................................................................4-1

Appendix A Capacitor Specifications..........................................................A-1

Appendix B Ordering Information ..............................................................B-1

Appendix C SanDisk Worldwide Sales Offices...........................................C-1

Appendix D Limited Warranty....................................................................D-1

Appendix E Disclaimer of Liability............................................................. E-1

Chapter 1 – Introduction

Revision 3.1 SanDisk iNAND Product Manual

1 Introduction

1.1 General Description

The SanDisk iNAND is a very small, flash storage device, designed specifically for storage

applications that put a premium on small form factor, low power and low cost. Flash is the

ideal storage medium for portable, battery-powered devices. It features low power

consumption and is non-volatile, requiring no power to maintain the stored data. It also has

a wide operating range for temperature, shock and vibration.

iNAND is well-suited to meet the needs of small, low power, electronic devices. With a

form factor measuring 12mm by 18mm by 1.2mm, iNAND is expected to be used in a wide

variety of portable devices like mobile phones, pagers, and voice recorders.

To support this wide range of applications, iNAND is offered with an SD Interface. The SD

interface product is fully compatible with iNAND products, and provides a 4-bit data bus

for maximum performance. For compatibility with existing controllers, the iNAND offers,

in addition to these interfaces, an alternate communication-protocol based on the SPI

standard.

These interfaces allow for easy integration into any design, regardless of which type of

microprocessor is used.All device and interface configuration data (such as maximum

frequency and card identification) are stored on the device.

The SanDisk iNAND provides up to 4 GB of memory for use in mass storage applications.

In addition to the mass-storage-specific flash memory chip, iNAND includes an intelligent

controller, which manages interface protocols, data storage and retrieval, error correction

code (ECC) algorithms, defect handling and diagnostics, power management, wear

leveling, and clock control. Figure 1-1 is a block diagram of the SanDisk iNAND with SD

Interface.

Figure 1-1 SanDisk iNAND Block Diagram

SD Bus/SPI Bus

Interface Flash

Memory

SanDisk

Single Chip

Controller Control

Data In/Out

SanDisk iNAND

Chapter 1 – Introduction

Revision 3.1 SanDisk iNAND Product Manual

1.2 Features

SanDisk iNAND product features include the following.

►Up to 4 GB of data storage

►SD-protocol compatible

►Supports SPI Mode

►Designed for portable and stationary applications that require high performance and reliable

data storage

►Voltage range 2.7 to 3.6V

►Variable clock rate 0-25 MHz (default), 0-50MHz (high-speed)

►Up to 25 MB/sec bus transfer rate (using 4 parallel data lines)

►Correction of memory-field errors

►Built-in write protection features (permanent and temporary)

►Application-specific commands

►Standard footprint across all capacities

1.3 Document Scope

This document describes the key features and specifications of the SanDisk iNAND as well

as the information required to interface it to a host system. Chapter 2 describes the physical

and mechanical properties of iNAND, Chapter 3 contains the pins and register overview,

and Chapter 4 gives a general overview of the SD protocol. Information about SPI Protocol

can be referenced in Section 7 of the SDA Physical Layer Specification, Version 2.00.

1.4 iNAND Standard

SanDisk iNAND devices are fully compatible with the SDA Physical Layer Specification,

Version 2.00.This specification is available from the SD Card Association (SDA).

SD Card Associations

2400 Camino Ramon, Suite 375

San Ramon, CA 94583 USA

Telephone: +1 (925) 275-6615

Fax: +1 (925) 886-4870

E-mail: office@sdcard.org

Website: www.sdcard.org

Chapter 1 – Introduction

Revision 3.1 SanDisk iNAND Product Manual

1.5 Functional Description

The SanDisk iNAND contains a high-level, intelligent subsystem as shown in Figure 1-1.

This intelligent (microprocessor) subsystem provides many capabilities not found in other

types of memory cards. These capabilities include:

•Host independence from details of erasing and programming flash memory

•Sophisticated system for managing defects (analogous to systems found in magnetic

disk drives)

•Sophisticated system for error recovery including a powerful ECC

•Power management for low power operation

1.6 Technology Independence

The 512-byte sector size of the SanDisk iNAND is the same as that in an IDE magnetic

disk drive. To write or read a sector (or multiple sectors), the host software simply issues a

read or write command to the card. The command contains the address and number of

sectors to write or read. The host software then waits for the command to complete.

The host software does not get involved in the details of how the flash memory is erased,

programmed or read. This is extremely important because flash devices are expected to get

increasingly complex in the future. Because iNAND use an intelligent on-board controller,

host system software will not need to be updated as new flash memory evolves. In other

words, systems that support iNAND technology today will be able to access future SanDisk

devices built with new flash technology without having to update or change host software.

Chapter 1 – Introduction

Revision 3.1 SanDisk iNAND Product Manual

1.7 Defect and Error Management

The SanDisk iNAND contains a sophisticated defect and error management system. This

system is analogous to the systems found in magnetic disk drives and in many cases offers

enhancements. If necessary, iNAND will rewrite data from a defective sector to a good

sector. This is completely transparent to the host and does not consume any user data space.

The soft error rate specification for iNAND is much better than the magnetic disk drive

specification. In the extremely rare case that a read error does occur, iNAND has

innovative algorithms to recover the data. These defect and error management systems,

coupled with the solid state construction, give SanDisk iNAND unparalleled reliability.

1.8 Wear Leveling

Wear-leveling is an intrinsic part of the erase pooling functionality of iNAND.

1.9 Automatic Sleep Mode

A unique feature of iNAND is automatic entrance and exit from sleep mode. Upon

completion of an operation, cards enter sleep mode to conserve power if no further

commands are received in less than 5 milliseconds (ms). The host does not have to take any

action for this to occur. However, in order to achieve the lowest sleep current, the host

needs to shut down its clock to the card. In most systems, cards are in sleep mode except

when accessed by the host, thus conserving power.

When the host is ready to access a card in sleep mode, any command issued to it will cause

it to exit sleep, and respond.

1.10 iNAND — SD Bus Mode

The following sections provide valuable information on SanDisk iNAND in SD Bus mode.

SanDisk iNAND devices are fully compliant with the SDA Physical Layer Specification,

Version 2.00. Card Specific Data (CSD) Register structures are compliant with CSD

Structure 1.0 and 2.0.

This section covers Negotiating Operating Conditions, Card Acquisition and Identification,

Card Status, Memory Array Partitioning, Read/Write Operations, Data Transfer Rate, Data

Protection in Flash Cards, Write Protection, Copy Bit, and CSD Register.

Additional practical card detection methods can be found in application notes pertaining to

the SDA Physical Layer Specification, Version 2.00.

Chapter 1 – Introduction

Revision 3.1 SanDisk iNAND Product Manual

SanDisk iNAND Memory Module

Sector 1

Sector 2

Sector 3

Sector n

WP Group 0

Block

WP Group 1

WP Group 2

Block

Figure 1-2 Memory Array Partitioning

Figure 1-3 Data Transfer Formats

Multiple Block Mode

Memory

Sectors

Memory

Sectors

Memory

Sectors

Memory

Sectors

Memory

Sectors

Memory

Sectors

Memory

Sectors

Memory

Sectors

Memory

Sectors

Memory

Sectors

Memory

Sectors

Memory

Sectors

Memory

Sectors

Memory

Sectors

Start Address

(Write)

Start Address

(Read/Write)

Start Address

(Read)

Write

Start Address Stop Start

Read

Stop

Single Block Mode Misalignment Error

Chapter 1 – Introduction

Revision 3.1 SanDisk iNAND Product Manual

Table 1-1 Mode Definitions

Mode Description

Single Block In this mode the host reads or writes one data block in a pre-specified length. The

data block transmission is protected with 16-bit CRC that is generated by the

sending unit and checked by the receiving unit.

The block length for read operations is limited by the device sector size (512 bytes)

but can be as small as a single byte. Misalignment is not allowed. Every data block

must be contained in a single physical sector.

The block length for write operations must be identical to the sector size and the

start address aligned to a sector boundary.

Multiple Block This mode is similar to the single block mode, except for the host can read/write

multiple data blocks (all have the same length) that are stored or retrieved from

contiguous memory addresses starting at the address specified in the command.

The operation is terminated with a stop transmission command.

Misalignment and block length restrictions apply to multiple blocks and are identical

to the single block read/write operations.

1.11 SPI Mode

The SPI Mode is a secondary communication protocol for iNAND devices. This mode is a

subset of the SD Protocol, designed to communicate with an SPI channel, commonly found

in Motorola and other vendors’ microcontrollers. Table 1-1 contains names and

descriptions of SPI Mode functions. More information about SPI Mode can be found in

Section 7 or the SDA Physical Layer Specification, Version 2.00.

Chapter 2 – Product Specifications

Revision 3.1 SanDisk iNAND Product Manual

2 Product Specifications

2.1 Overview

For details about the environmental, reliability and durability specifications, refer to

Section 8.1 of the SDA Physical Layer Specification, Version 2.00.

2.2 Typical Card Power Requirements

Table 2-1 iNAND Power Requirements (Ta=25°[email protected])

VDD (ripple: max, 60mV peak-to-peak) 2.7 V – 3.6 V

Value Measurement Average

Sleep 250 uA Max

Read 100 mA Max

Write 100 mA Max

2.3 System Performance

All performance values for iNAND in Table 2-2 were measured using the following

conditions:

•Voltage range 2.7 V to 3.6 V

•Temperature -25° C to 85° C

•Independent of the iNAND clock frequency

Table 2-2 System Performance

Timing Maximum Value

Block Read Access Time 100 ms

Block Write Access Time 250 ms

CMD1 to Ready after Power-up 1000 ms

2.4 System Reliability and Maintenance

Table 2-3 Reliability and Maintenance Specifications

MTBF >1,000,000 hours

Preventative Maintenance None

Data Reliability <1 non-recoverable error in 1014 bits read

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