Philips PIP3210-R Manuel du propriétaire

Philips Semiconductors Product specification

TOPFET high side switch PIP3210-R

DESCRIPTION QUICK REFERENCE DATA

Monolithic single channel high side SYMBOL PARAMETER MIN. UNIT

protected power switch in

TOPFET2 technology assembled in ILNominal load current (ISO) 9 A

a 5 pin plastic surface mount

package. SYMBOL PARAMETER MAX. UNIT

APPLICATIONS VBG Continuous off-state supply voltage 50 V

General controller for driving ILContinuous load current 20 A

lamps, motors, solenoids, heaters. TjContinuous junction temperature 150 ˚C

RON On-state resistance Tj= 25˚C 38 mΩ

FEATURES FUNCTIONAL BLOCK DIAGRAM

Vertical power TrenchMOS

Low on-state resistance

CMOS logic compatible

Very low quiescent current

Overtemperature protection

Load current limiting

Latched overload and

short circuit protection

Overvoltage and undervoltage

shutdown with hysteresis

On-state open circuit load

detection

Diagnostic status indication

Voltage clamping for turn off

of inductive loads

ESD protection on all pins

Reverse battery, overvoltage

and transient protection

Fig.1. Elements of the TOPFET HSS with internal ground resistor.

PINNING - SOT426 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION

1Ground

2Input

3 (connected to mb)

4Status

5Load Fig. 2. Fig. 3.

mb Battery

BATT

LOAD

INPUT

GROUND

STATUS POWER

MOSFET

CONTROL &

PROTECTION

CIRCUITS

12 45

HSS

TOPFET

September 2001 1 Rev 1.000

Philips Semiconductors Product specification

TOPFET high side switch PIP3210-R

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VBG Continuous supply voltage 0 50 V

ILContinuous load current Tmb ≤95˚C - 20 A

PDTotal power dissipation Tmb ≤25˚C - 67 W

Tstg Storage temperature -55 175 ˚C

TjContinuous junction temperature1- 150 ˚C

Tsold Mounting base temperature during soldering - 260 ˚C

Reverse battery voltages2

-VBG Continuous reverse voltage - 16 V

-VBG Peak reverse voltage - 32 V

Application information

RI, RSExternal resistors3to limit input, status currents 3.2 - kΩ

Input and status

II, ISContinuous currents -5 5 mA

II, ISRepetitive peak currents δ≤0.1, tp = 300 µs -50 50 mA

Inductive load clamping IL= 10 A, VBG = 16 V

EBL Non-repetitive clamping energy Tj≤150˚C prior to turn-off - 150 mJ

ESD LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCElectrostatic discharge capacitor Human body model; - 2 kV

voltage C = 250 pF; R = 1.5 kΩ

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Thermal resistance4

Rth j-mb Junction to mounting base - - 1.52 1.86 K/W

1 For normal continuous operation. A higher Tjis allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates

to protect the switch.

2 Reverse battery voltage is allowed only with external resistors to limit the input and status currents to a safe value. The connected load must

limit the reverse load current. The internal ground resistor limits the reverse battery ground current. Power is dissipated and the Tj

rating must be observed.

3 To limit currents during reverse battery and transient overvoltages (positive or negative).

4 Of the output power MOS transistor.

September 2001 2 Rev 1.000

Philips Semiconductors Product specification

TOPFET high side switch PIP3210-R

STATIC CHARACTERISTICS

Limits are at -40˚C ≤Tmb ≤150˚C and typicals at Tmb = 25 ˚C unless otherwise stated.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Clamping voltages

VBG Battery to ground IG= 1 mA 50 55 65 V

VBL Battery to load IL= IG= 1 mA 50 55 65 V

-VLG Negative load to ground IL= 10 mA 18 23 28 V

-VLG Negative load voltage1IL= 10 A; tp= 300 µs202530V

Supply voltage battery to ground

VBG Operating range25.5 - 35 V

Currents 9 V ≤VBG ≤16 V

IBQuiescent current3VLG = 0 V - - 20 µA

Tmb = 25˚C - 0.1 2 µA

ILOff-state load current4VBL = VBG --20µA

Tmb = 25˚C - 0.1 1 µA

IGOperating current5IL= 0 A - 2 4 mA

ILNominal load current6VBL = 0.5 V Tmb = 85˚C 9 - - A

Resistances VBG ILtp7Tmb

RON On-state resistance 9 to 35 V 10 A 300 µs 25˚C - 28 38 mΩ

150˚C - - 70 mΩ

RON On-state resistance 6 V 10 A 300 µs 25˚C - 36 48 mΩ

150˚C - - 88 mΩ

RGInternal ground resistance IG= 10 mA 95 150 190 Ω

1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load.

2 On-state resistance is increased if the supply voltage is less than 9 V.

3 This is the continuous current drawn from the supply when the input is low and includes leakage current to the load.

4 The measured current is in the load pin only.

5 This is the continuous current drawn from the supply with no load connected, but with the input high.

6 Defined as in ISO 10483-1. For comparison purposes only.

7 The supply and input voltage for the RON tests are continuous. The specified pulse duration tprefers only to the applied load current.

September 2001 3 Rev 1.000

Philips Semiconductors Product specification

TOPFET high side switch PIP3210-R

INPUT CHARACTERISTICS

9 V ≤VBG ≤16 V. Limits are at -40˚C ≤Tmb ≤150˚C and typicals at Tmb = 25 ˚C unless otherwise stated.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

IIInput current VIG = 5 V 20 90 160 µA

VIG Input clamping voltage II= 200 µA 5.5 7 8.5 V

VIG(ON) Input turn-on threshold voltage - 2.4 3 V

VIG(OFF) Input turn-off threshold voltage 1.5 2.1 - V

∆VIG Input turn-on hysteresis - 0.3 - V

II(ON) Input turn-on current VIG = 3 V - - 100 µA

II(OFF) Input turn-off current VIG = 1.5 V 10 - - µA

STATUS CHARACTERISTICS

The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high.

Limits are at -40˚C ≤Tmb ≤150˚C and typicals at Tmb = 25 ˚C unless otherwise stated. Refer to TRUTH TABLE.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VSG Status clamping voltage IS= 100 µA 5.5 7 8.5 V

VSG Status low voltage IS= 100 µA--1V

Tmb = 25˚C - 0.7 0.8 V

ISStatus leakage current VSG = 5 V - - 15 µA

Tmb = 25˚C - 0.1 1 µA

ISStatus saturation current1VSG = 5 V 2 7 12 mA

Application information

RSExternal pull-up resistor - 47 - kΩ

OPEN CIRCUIT DETECTION CHARACTERISTICS

An open circuit load can be detected in the on-state. Refer to TRUTH TABLE.

Limits are at -40˚C ≤Tmb ≤150˚C and typical is at Tmb = 25 ˚C.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Open circuit detection 9 V ≤VBG ≤35 V

IL(TO) Low current detect threshold 0.24 - 1.6 A

Tj= 25˚C 0.4 0.8 1.2 A

∆IL(TO) Hysteresis - 0.16 - A

1 In a fault condition with the pull-up resistor short circuited while the status transistor is conducting. This condition should be avoided in order to

prevent possible interference with normal operation of the device.

September 2001 4 Rev 1.000

Philips Semiconductors Product specification

TOPFET high side switch PIP3210-R

UNDERVOLTAGE & OVERVOLTAGE CHARACTERISTICS

Limits are at -40˚C ≤Tmb ≤150˚C and typicals at Tmb = 25 ˚C. Refer to TRUTH TABLE.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Undervoltage

VBG(UV) Low supply threshold voltage12 4.2 5.5 V

∆VBG(UV) Hysteresis - 0.5 - V

Overvoltage

VBG(OV) High supply threshold voltage240 45 50 V

∆VBG(OV) Hysteresis - 1 - V

TRUTH TABLE

ABNORMAL CONDITIONS

DETECTED LOAD

INPUT SUPPLY LOAD OUTPUT STATUS DESCRIPTION

UV OV LC SC OT

L X X X X X OFF H off

H 0 0 0 0 0 ON H on & normal

H 0 0 1 0 0 ON L on & low current detect

H 1 0 X X X OFF H supply undervoltage lockout

H 0 1 X 0 0 OFF H supply overvoltage shutdown

H 0 0 0 1 X OFF L SC tripped

H 0 0 0 0 1 OFF L OT shutdown3

KEY TO ABBREVIATIONS

L logic low UV undervoltage

H logic high OV overvoltage

X don’t care LC low current or open circuit load

0 condition not present SC short circuit

1 condition present OT overtemperature

1 Undervoltage sensor causes the device to switch off and reset.

2 Overvoltage sensor causes the device to switch off to protect its load.

3 The status will continue to indicate OT (even if the input goes low) until the device cools below the reset threshold. Refer to OVERLOAD

PROTECTION CHARACTERISTICS.

September 2001 5 Rev 1.000

Philips Semiconductors Product specification

TOPFET high side switch PIP3210-R

OVERLOAD PROTECTION CHARACTERISTICS

5.5 V ≤VBG ≤35 V, limits are at -40˚C ≤Tmb ≤150˚C and typicals at Tmb = 25 ˚C unless otherwise stated.

Refer to TRUTH TABLE.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Overload protection VBL = VBG

IL(lim) Load current limiting VBG ≥9 V 34 45 64 A

Short circuit load protection

VBL(TO) Battery load threshold voltage1VBG = 16 V 8 10 12 V

VBG = 35 V 15 20 25 V

td sc Response time2VBL > VBL(TO) - 180 250 µs

Overtemperature protection

Tj(TO) Threshold junction 150 170 190 ˚C

temperature3

∆Tj(TO) Hysteresis - 10 - ˚C

SWITCHING CHARACTERISTICS

Tmb = 25 ˚C, VBG = 13 V, for resistive load RL= 13 Ω.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

During turn-on from input going high

td on Delay time to 10% VL-4060µs

dV/dton Rate of rise of load voltage 30% to 70% VL- 0.35 1 V/µs

t on Total switching time to 90% VL- 140 200 µs

During turn-off from input going low

td off Delay time to 90% VL-5580µs

dV/dtoff Rate of fall of load voltage 70% to 30% VL- 0.6 1 V/µs

t off Total switching time to 10% VL- 85 120 µs

CAPACITANCES

Tmb = 25 ˚C; f = 1 MHz; VIG = 0 V. designed in parameters.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Cig Input capacitance VBG = 13 V - 15 20 pF

Cbl Output capacitance VBL = 13 V - 250 350 pF

Csg Status capacitance VSG = 5 V - 11 15 pF

1 The battery to load threshold voltage for short circuit protection is proportional to the battery supply voltage. After short circuit protection has

operated, the input voltage must be toggled low for the switch to resume normal operation.

2 Measured from when the input goes high.

3 After cooling below the reset temperature the switch will resume normal operation.

September 2001 6 Rev 1.000

Philips Semiconductors Product specification

TOPFET high side switch PIP3210-R

Fig.4. High side switch measurements schematic.

(current and voltage conventions)

Fig.5. Typical on-state resistance, tp= 300 µs.

RON = f(Tj); parameter VBG; condition IL= 10 A

Fig.6. Typical on-state characteristics, Tj= 25 ˚C.

IL= f(Tj); parameter VBG; tp= 250 µs

Fig.7. Typical supply characteristics, 25 ˚C.

IG= f(VBG); parameter VIG

Fig.8. Typical on-state resistance,Tj= 25 ˚C.

RON = f(VBG); condition IL= 10 A; tp= 300 µs

Fig.9. Typical operating supply current.

IG= f(Tj); parameters IL, VBG; condition VIG = 5 V

TOPFET

HSS

IS IL

VBG

VIG VSG RS

VLG

LOAD

VBL

0 10203040506070

VBG / V

IBG(ON) / mA

OPERATING VIG = 5 V

CLAMPING

OVERVOLTAGE

SHUTDOWN

UNDERVOLTAGE

SHUTDOWN

QUIESCENT VIG = 0 V

-50 0 50 100 150 200

/ mOhm

= 6 V

9 V =< V

=< 35 V

typ

/ mOhm

1 10 100

/ V

max

012

/ V

/ A

/ V > = 8

0.5

1.0

1.5

2.0

2.5

3.0

-50 0 50 100 150 200

/ mA

lL > IL(TO)

= 50 V

9 V <= V

<= 35 V

typ.

= 0 A

> I

L(TO)

September 2001 7 Rev 1.000

Philips Semiconductors Product specification

TOPFET high side switch PIP3210-R

Fig.10. Typical supply quiescent current.

IB= f(Tj); condition VBG = 16 V, VIG = 0 V, VLG = 0 V

Fig.11. Typical off-state leakage current.

IL= f(Tj); conditions VBL = 16 V = VBG, VIG = 0 V.

Fig.12. Status leakage current.

IS= f(Tj); conditions VSG = 5 V, VIG = VBG = 0 V

Fig.13. Low load current detection threshold.

IL(OC) = f(Tj); conditions VIG = 5 V; VBG ≥9 V

Fig.14. Supply undervoltage thresholds.

VBG(UV) = f(Tj); conditions VIG = 5 V; VBL ≤2 V

Fig.15. Supply overvoltage thresholds.

VBG(OV) = f(Tj); conditions VIG = 5 V; IL= 100 mA

100E-12

1E-9

10E-9

100E-9

1E-6

10E-6

100E-6

-50 0 50 100 150 200

IB/ A

Tj/ OC

max.

typ.

0.0

0.4

0.8

1.2

1.6

-50 0 50 100 150 200

L(OC)

/ A

typ.

min.

max.

10E-12

00E-12

1E-9

10E-9

100E-9

1E-6

10E-6

100E-6

-50 0 50 100 150 200

Tj/ OC

IL/ A

max.

typ.

2.5

3.5

4.5

5.5

-50 0 50 100 150 200

BG(UV)

/ V

typ.

off

1E-9

10E-9

100E-9

1E-6

10E-6

100E-6

-50 0 50 100 150 200

Tj/ OC

IS/ A

max.

typ.

-50 0 50 100 150 200

Tj/ OC

VBG(OV) / V

max.

min.

off

September 2001 8 Rev 1.000

Philips Semiconductors Product specification

TOPFET high side switch PIP3210-R

Fig.16. Typical status low characteristic.

VSG = f(Tj); conditions VBG ≥9 V, IS= 100 µA

Fig.17. Typical threshold voltage characteristic.

VIG = f(Tj); condition 9V ≤VBG ≤16V

Fig.18. Typical input clamping voltage.

VIG = f(Tj); condition II= 200µA, VBG = 13V

Fig.19. Typical status low characteristic, Tj= 25 ˚C.

IS= f(VSG); conditions VIG = 5V, VBG = 13V,IL= 0A

Fig.20. Typical status clamping voltage.

VSG = f(Tj); condition IS= 100µA, VBG = 13V

Fig.21. Typical status characteristic, Tj= 25 ˚C.

IS= f(VSG); conditions VIG = VBG = 0V

SG(LOW)

/ V

0.5

-50 0 50 100 150 200

/ mA

012345

/ V

1.00

1.50

2.00

2.50

3.00

-50 0 50 100 150 200

/ V

IG(ON)

IG(OFF)

6.50

6.60

6.70

6.80

6.90

7.00

7.10

7.20

7.30

7.40

7.50

-50 0 50 100 150 200

/ V V

/ V =

6.50

6.60

6.70

6.80

6.90

7.00

7.10

7.20

7.30

7.40

7.50

-50 0 50 100 150 200

/ V

/ mA

0246810

/ V

September 2001 9 Rev 1.000

Philips Semiconductors Product specification

TOPFET high side switch PIP3210-R

Fig.22. Typical battery to ground clamping voltage.

VBG = f(Tj); parameter IG

Fig.23. Typical battery to load clamping voltage.

VBL = f(Tj); parameter IL; condition IG= 10mA

Fig.24. Typical negative load clamping.

IL= f(VLG); conditions VIG = = 0V, Tj= 25˚C

Fig.25. Typical negative load clamping voltage.

VLG = f(Tj); parameter IL; condition VIG = = 0V

Fig.26. Typical reverse diode characteristic.

IL= f(VBL); conditions VIG = 0 V, Tj= 25 ˚C

Fig.27. Typical overload characteristic, Tmb = 25 ˚C.

IL= f(VBL); condition VBG = 16 V; parameter tp

-50 0 50 100 150 200

Tj/ OC

VBG / V

1 mA

200 mA

-30

-25

-20

-15

-10

-50 0 50 100 150 200

Tj/ OC

IL=

10 mA

10 A

VLG / V

-50 0 50 100 150 200

1 mA

600 mA

/ V

IL/ A

-50

-45

-40

-35

-30

-25

-20

-15

-10

-5

-1.1 -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0

VBL / V

/ A

-30 -25 -20 -15 -10

/ V

/ A

02468101214161820

/ V

Short circuit trip = 150us

BL(TO)

typ.

current limiting

September 2001 10 Rev 1.000

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