Philips SA5211 Manuel du propriétaire

SA5211

Transimpedance ampliﬁer (180 MHz)

Rev. 03 — 07 October 1998 Product speciﬁcation

1. Description

The SA5211 is a 28 kΩtransimpedance, wide-band, low noise ampliﬁer with

differential outputs, particularly suitable for signal recovery in ﬁber optic receivers.

The part is ideally suited for many other RF applications as a general purpose gain

block.

2. Features

■Extremely low noise: 1.8 pA / √Hz

■Single 5 V supply

■Large bandwidth: 180 MHz

■Differential outputs

■Low input/output impedances

■High power supply rejection ratio

■28 kΩdifferential transresistance

3. Applications

■Fiber optic receivers, analog and digital

■Current-to-voltage converters

■Wide-band gain block

■Medical and scientiﬁc Instrumentation

■Sensor preampliﬁers

■Single-ended to differential conversion

■Low noise RF ampliﬁers

■RF signal processing

Philips Semiconductors SA5211

Transimpedance ampliﬁer (180 MHz)

Product speciﬁcation Rev. 03 — 07 October 1998 2 of 28

4. Pinning information

4.1 Pinning

5. Ordering information

6. Limiting values

[1] Maximum dissipation is determined by the operating ambient temperature and the thermal resistance:

θJA = 125 °C/W

[2] The use of a pull-up resistor to VCC, for the PIN diode is recommended.

Fig 1. Pin conﬁguration.

GND2

IIN

VCC1

VCC2 GND1

GND1

GND2

OUT (–)

OUT (+)

D Package

TOP VIEW

SD00318

Table 1: Ordering information

Type number Package

Name Description Version Temperature

range (°C)

SA5211D SO14 plastic small outline package; 14 leads; body width 3.9 mm SOT108-1 −40 to +85

Table 2: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCC power supply −6V

Tamb operating ambient

temperature range -40 +85 °C

TJoperating junction

temperature range -55 +150 °C

TSTG storage temperature range -65 +150 °C

PD MAX power dissipation, TA=25°C

(still-air)[1] −1.0 W

IIN MAX maximum input current[2] −5mA

θJA thermal resistance −125 °C/W

Philips Semiconductors SA5211

Transimpedance ampliﬁer (180 MHz)

Product speciﬁcation Rev. 03 — 07 October 1998 3 of 28

7. Static characteristics

[1] Test condition: output quiescent voltage variation is less than 100 mV for 3 mA load current.

8. Dynamic characteristics

Table 3: Recommended operating conditions

Symbol Parameter Conditions Min Max Unit

VCC supply voltage 4.5 5.5 V

Tamb ambient temperature range -40 +85 °C

TJjunction temperature range -40 +105 °C

Table 4: DC electrical characteristics

Min and Max limits apply over operating temperature range at V

= 5 V, unless otherwise speciﬁed. Typical data apply at

= 5 V and T

amb

=25

Symbol Parameter Test conditions Min Typ Max Unit

VIN input bias voltage 0.55 0.8 1.00 V

VO±output bias voltage 2.7 3.4 3.7 V

VOS output offset voltage −0 130 mV

ICC supply current 20 26 31 mA

IOMAX output sink/source current[1] 34−mA

IIN input current

(2% linearity) Test Circuit 8,

Procedure 2 ±20 ±40 −µA

IIN MAX maximum input current

overload threshold Test Circuit 8,

Procedure 4 ±30 ±60 −µA

Table 5: AC electrical characteristics

Typical data and Min and Max limits apply at V

= 5 V and T

amb

=25

Symbol Parameter Test conditions Min Typ Max Unit

RTtransresistance (differential output) DC tested RL = ∞

Test Circuit 8, Procedure 1 21 28 36 kΩ

ROoutput resistance (differential output) DC tested −30 −Ω

RTtransresistance (single-ended output) DC tested

RL = ∞10.5 14 18.0 kΩ

ROoutput resistance (single-ended output) DC tested −15 −Ω

f3dB bandwidth (-3dB) TA= 25°C

Test circuit 1 −180 −MHz

RIN input resistance −200 −Ω

CIN input capacitance −4−pF

∆R/∆V transresistance power supply sensitivity VCC = 5±0.5 V −3.7 −%/V

∆R/∆T transresistance ambient temperature sensitivity ∆Tamb = Tamb MAX-Tamb MIN −0.025 −%/°C

INRMS noise current spectral density (referred to

input) Test Circuit 2

f = 10 MHz

TA = 25 °C

−1.8 −pA/√Hz

ITintegrated RMS noise current over the

bandwidth (referred to input) TA = 25 °C

Test Circuit 2 −−−−

Philips Semiconductors SA5211

Transimpedance ampliﬁer (180 MHz)

Product speciﬁcation Rev. 03 — 07 October 1998 4 of 28

[1] Package parasitic capacitance amounts to about 0.2pF

[2] PSRR is output referenced and is circuit board layout dependent at higher frequencies. For best performance use RF ﬁlter in VCC lines.

[3] Guaranteed by linearity and overload tests.

[4] tRdeﬁned as 20 to 80% rise time. It is guaranteed by -3dB bandwidth test.

InCS=0[1] ∆f = 50 MHz

∆f = 100 MHz

∆f = 200 MHz

−

InCS= 1pF ∆f = 50 MHz

∆f = 100 MHz

∆f = 200 MHz

−

PSRR power supply rejection ratio[2]

(VCC1 = VCC2)DC tested, ∆VCC = 0.1V

Equivalent AC

Test Circuit 3

23 32 −dB

PSRR power supply rejection ratio[2] (VCC1) DC tested, ∆VCC = 0.1V

Equivalent AC

Test Circuit 4

23 32 −dB

PSRR power supply rejection ratio[2] (VCC2) DC tested, ∆VCC = 0.1V

Equivalent AC

Test Circuit 5

45 65 −dB

PSRR power supply rejection ratio (ECL

conﬁguration)[2] f = 0.1 MHz

Test Circuit 6 −23 −dB

VOMAX maximum differential output voltage swing RL = ∞

Test Circuit 8, Procedure 3 1.7 3.2 −VP-P

VIN MAX maximum input amplitude for output duty cycle

of 50±5%[3] Test Circuit 7 160 −−mVP-P

tRrise time for 50mV output signal[4] Test Circuit 7 −0.8 1.8 ns

Table 5: AC electrical characteristics

…continued

Typical data and Min and Max limits apply at V

= 5 V and T

amb

=25

Symbol Parameter Test conditions Min Typ Max Unit

Philips Semiconductors SA5211

Transimpedance ampliﬁer (180 MHz)

Product speciﬁcation Rev. 03 — 07 October 1998 5 of 28

9. Test circuits

Fig 2. Test circuits 1 and 2.

Test Circuit 2

Test Circuit 1

SINGLE-ENDED DIFFERENTIAL

NETWORK ANALYZER

S-PARAMETERTEST SET

PORT 1 PORT 2

IN DUT

OUT

GND

CC1

CC2

= 50

0.1µF

= 50

R = 1k 0.1µF

0.1µF

SPECTRUM ANALYZER

IN DUT

OUT

OUT 33

GND

CC1

CC2

0.1µF

= 50

0.1µF

= 60DB

= 50

SD00319

≈

OUT

R = 2 ×S21 ×RR

= V

OUT

R = 4 ×S21 ×R

≈

1 + S22

1 – S22



– 33 R

= 2Z

1 + S22

1 – S22



– 66

Philips Semiconductors SA5211

Transimpedance ampliﬁer (180 MHz)

Product speciﬁcation Rev. 03 — 07 October 1998 6 of 28

Fig 3. Test circuits 3 and 4.

Test Circuit 4

Test Circuit 3

NETWORK ANALYZER

S-PARAMETER TEST SET

PORT 1 PORT 2

VCC2

VCC1

GND1GND2

CURRENT PROBE

1mV/mA

CAL

TEST

TRANSFORMER

NH0300HB

100

OUT

OUT BAL.

0.1µF

10µF

0.1µF

UNBAL.

NETWORK ANALYZER

S-PARAMETER TEST SET

PORT 1 PORT 2

CURRENT PROBE

1mV/mA

CAL

TEST

TRANSFORMER

NH0300HB

100

OUT

OUT BAL.

UNBAL.

VCC1

VCC2

0.1µF

10µF0.1µF

0.1µF

10µF

GND1GND2

SD00320

Philips Semiconductors SA5211

Transimpedance ampliﬁer (180 MHz)

Product speciﬁcation Rev. 03 — 07 October 1998 7 of 28

Fig 4. Test circuits 5 and 6.

NETWORK ANALYZER

S-PARAMETER TEST SET

PORT 1 PORT 2

CURRENT PROBE

1mV/mA

CAL

TEST

TRANSFORMER

NH0300HB

100

OUT

OUT BAL.

UNBAL.

VCC2

VCC1

0.1µF

10µF0.1µF

0.1µF

10µF

Test Circuit 6

Test Circuit 5

NETWORK ANALYZER

S-PARAMETER TEST SET

PORT 1 PORT 2

CURRENT PROBE

1mV/mA

CAL

TEST

TRANSFORMER

NH0300HB

100

OUT

OUT BAL.

UNBAL.

GND2

GND1

VCC1 VCC2

0.1µF

10µF

GND

0.1µF

10µF

5.2V

10µF

GND2

GND1

SD00321

Philips Semiconductors SA5211

Transimpedance ampliﬁer (180 MHz)

Product speciﬁcation Rev. 03 — 07 October 1998 8 of 28

Fig 5. Test circuit 7.

Test Circuit 7

OSCILLOSCOPE

1k OUT

OUT

GND2

GND1

VCC1 VCC2

0.1µF

PULSE GEN.

Measurement done using

differential wave forms

0.1µF

ZO= 50Ω

BZO= 50Ω

DUT

SD00322

Philips Semiconductors SA5211

Transimpedance ampliﬁer (180 MHz)

Product speciﬁcation Rev. 03 — 07 October 1998 9 of 28

Fig 6. Test circuit 8.

GND2

Test Circuit 8

OUT +

OUT –

GND1

IN DUT

IIN (µA)

VOUT (V)

–

Typical Differential Output Voltage

vs Current Input

2.00

1.60

1.20

0.80

0.40

0.00

–0.40

–0.80

–1.20

–1.60

–2.00

–100 –80 –60 –40 –20 0 20 40 60 80 100

DIFFERENTIAL OUTPUTVOLTAGE (V)

CURRENT INPUT (µA)

NE5211 TEST CONDITIONS

Procedure 1 RTmeasured at 15µA

RT= (VO1 – VO2)/(+15µA – (–15µA))

Where: VO1 Measured at IIN = +15µA

VO2 Measured at IIN = –15µA

Procedure 2 Linearity = 1 – ABS((VOA – VOB) / (VO3 – VO4))

Where: VO3 Measured at IIN = +30µA

VO4 Measured at IIN = –30µA

Procedure 3 VOMAX = VO7 – VO8

Where: VO7 Measured at IIN = +65µA

VO8 Measured at IIN = –65µA

Procedure 4 IIN Test Pass Conditions:

VO7 – VO5 > 20mV and V06 – VO5 > 50mV

Where: VO5 Measured at IIN = +40µA

VO6 Measured at IIN = –400µA

VO7 Measured at IIN = +65µA

VO8 Measured at IIN = –65µA

SD00331

VOB = RT×(– 30µA) + VOB

VOA = RT×(+ 30µA) + VOB

Philips Semiconductors SA5211

Transimpedance ampliﬁer (180 MHz)

Product speciﬁcation Rev. 03 — 07 October 1998 10 of 28

10. Typical performance characteristics

Fig 7. Typical performance characteristics.

DIFFERENTIAL OUTPUT VOLTAGE (V)

OUTPUT VOLTAGE (V)

OUTPUT BIAS VOLTAGE (V)

NE5211 Supply Current

vs Temperature NE5211 Output Bias Voltage

vs Temperature

NE5211 Output Voltage

vs Input Current

NE5211 Input Bias Voltage

vs Temperature NE5211 Output Bias Voltage

vs Temperature NE5211 Differential Output Voltage

vs Input Current

NE5211 Output Offset Voltage

vs Temperature NE5211 Differential Output Swing

vs Temperature

NE5211 Output Voltage

vs Input Current

AMBIENT TEMPERATURE (

60 20 0 20 40 60 80 100 120

40

TOTAL SUPPLY CURRENT (mA)

(I + I )

CC1 CC2

3.50

3.45

3.40

3.35

3.30

3.25

OUTPUT BIAS VOLTAGE (V)

VCC = 5.0V

PIN 14

PIN 12

950

INPUT BIAS VOLTAGE (mV)

5.5V

4.5V

OUTPUT OFFSET VOLTAGE (mV)

5.5V

5.0V

4.5V

VOS =V

OUT12 V

OUT14

4.1

3.9

3.7

3.5

3.3

3.1

2.9

2.7

PIN 14

5.5V

5.0V

4.5V

DIFFERENTIAL OUTPUT SWING (V)

4.0

3.8

3.6

3.4

3.2

3.0

2.8

2.6

5.5V

5.0V

4.5V

2.4

2.2

DC TESTED

RL=

4.5

2.5

100.0 0 +100.0

INPUT CURRENT (

+25

+125

C+85

55

+125

+85

2.0

2.0

100.0 0 +100.0

INPUT CURRENT (

5.5V 5.0V

4.5V

5.5V5.0V

4.5V

2.0

2.0

100.0 0 +100.0

INPUT CURRENT (

+125

C+85

+25

55

140

5.5V

4.5V

5.0V

60 20 0 20 40 60 80 100 12040 140

AMBIENT TEMPERATURE (

60 20 0 20 40 60 80 100 12040 140

AMBIENT TEMPERATURE (

900

850

800

750

700

650 60 20 0 20 40 60 80 100 12040 140

AMBIENT TEMPERATURE (

60 20 0 20 40 60 80 100 12040 140

AMBIENT TEMPERATURE (

20

40

60

80

100

120

140 60 20 0 20 40 60 80 100 12040 140

AMBIENT TEMPERATURE (

+25

55

C55

+25

+85

55

+25

+125

+85

SD00332

+125

Ce manuel convient aux modèles suivants

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