Philips CGY2014TT Manuel utilisateur

DATA SHEET

Product speciﬁcation

Supersedes data of 2000 Apr 11

File under Integrated Circuits, IC17

2000 Oct 16

INTEGRATED CIRCUITS

CGY2014TT

GSM/DCS/PCS power amplifier

2000 Oct 16 2

Philips Semiconductors Product speciﬁcation

GSM/DCS/PCS power ampliﬁer CGY2014TT

FEATURES

•Operating at 3.6 V battery supply

•Power Amplifier (PA) output power:

35 dBm in GSM band and 32.5 dBm in DCS/PCS band

•Input power: 0 dBm in GSM band and 3 dBm in

DCS/PCS band

•Wide operating temperature range from −20 to +85 °C

•HTSSOP20 exposed die pad package.

APPLICATIONS

•Dual-band systems: Low Band (LB) from

880 to 915 MHz hand-held transceivers for E-GSM and

High Band (HB) from 1710 to 1910 MHz for DCS/PCS

applications.

GENERAL DESCRIPTION

The CGY2014TT is a dual-band GSM/DCS/PCS GaAs

Monolithic Microwave Integrated Circuit (MMIC) power

amplifier. The circuit is specifically designed to operate at

3.6 V battery supply voltage.

The power amplifier requires only a 30 dB harmonic

low-pass filter to comply with the transmit spurious

specification.

The voltages applied on pins VDD (drain) control the power

of the power amplifier and permit to switch it off.

QUICK REFERENCE DATA

ORDERING INFORMATION

SYMBOL PARAMETER MIN. TYP. MAX. UNIT

VDD positive supply voltage −3.5 4.2 V

IDD(LB) GSM positive peak supply current −2−A

Po(LB)(max) maximum output power in GSM band 34.5 35 −dBm

IDD(HB) DCS/PCS positive peak supply current −1.5 −A

Po(HB)(max) maximum output power in DCS/PCS band 32 32.5 −dBm

Tamb ambient temperature −20 −+85 °C

TYPE

NUMBER PACKAGE

NAME DESCRIPTION VERSION

CGY2014TT HTSSOP20 plastic, heatsink thin shrink small outline package; 20 leads;

body width 4.4 mm SOT527-1

2000 Oct 16 3

Philips Semiconductors Product speciﬁcation

GSM/DCS/PCS power ampliﬁer CGY2014TT

BLOCK DIAGRAM

handbook, full pagewidth

CGY2014TT

GND

RFO/VDD3LB

n.c.

RFO/VDD3HB

RFILB

RFIHB

13, 14

FCA180

VDD1HB

VDD1LB VDD2LB

VDD2HB

GND1LB

3 4, 5

17, 18

1, 10, 11, 12,

16, 19, 20

Fig.1 Block diagram.

2000 Oct 16 4

Philips Semiconductors Product speciﬁcation

GSM/DCS/PCS power ampliﬁer CGY2014TT

PINNING

SYMBOL PIN DESCRIPTION

n.c. 1 not connected

RFIHB 2 DCS/PCS power ampliﬁer input

VDD1HB 3 DCS/PCS ﬁrst stage supply voltage

VDD2HB 4 DCS/PCS second stage supply voltage

VDD2HB 5 DCS/PCS second stage supply voltage

VDD2LB 6 GSM second stage supply voltage

VDD1LB 7 GSM ﬁrst stage supply voltage

GND1LB 8 GSM ﬁrst stage ground

RFILB 9 GSM power ampliﬁer input

n.c. 10 not connected

n.c. 11 not connected

n.c. 12 not connected

RFO/VDD3LB 13 GSM power ampliﬁer output and third stage supply voltage

RFO/VDD3LB 14 GSM power ampliﬁer output and third stage supply voltage

GND 15 ground

n.c. 16 internal connection to ground; pin should not be connected to the board

RFO/VDD3HB 17 DCS/PCS power ampliﬁer output and third stage supply voltage

RFO/VDD3HB 18 DCS/PCS power ampliﬁer output and third stage supply voltage

n.c. 19 not connected

n.c. 20 not connected

−exposed die ground

FUNCTIONAL DESCRIPTION

Operating conditions

The CGY2014TT is designed to meet the European

Telecommunications Standards Institute (ETSI) GSM

documents, the

“ETS 300 577 specification”

, which are

defined as follows:

•ton = 570 µs

•T = 4.16 ms

•Duty cycle δ=1/8.

Multislot operation can be implemented provided that the

application circuit does not drive the IC beyond the limiting

values.

Power ampliﬁer

The GSM and DCS/PCS power amplifiers consist of three

cascaded gain stages with an open-drain configuration.

Each drain has to be loaded externally by an adequate

reactive circuit which also has to be a DC path to the

supply.

handbook, halfpage

CGY2014TT

FCA181

n.c.

RFIHB

VDD1HB

VDD2HB

VDD2LB

VDD1LB

GND1LB

RFILB

n.c.

RFO/VDD3HB

n.c.

GND

RFO/VDD3LB

n.c.

Fig.2 Pin configuration.

2000 Oct 16 5

Philips Semiconductors Product speciﬁcation

GSM/DCS/PCS power ampliﬁer CGY2014TT

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. The total power dissipation is measured under GSM pulse conditions in a good thermal environment;

see

“Application Note CTT0003”

THERMAL CHARACTERISTICS

Note

1. This thermal resistance is measured under GSM pulse conditions in a good thermal environment;

see

“Application Note CTT0003”

DC CHARACTERISTICS

VDD = 3.5 V; Tamb =25°C; general operating conditions applied; peak current values measured during burst; unless

otherwise speciﬁed.

Notes

1. The supply circuit includes a (drain) MOS switch with RDSon =40mΩ. The battery voltage is 3.6 V (typical value).

2. No RF input signal or Pi(LB) <−30 dBm; VDD =1V.

3. No RF input signal or Pi(HB) <−30 dBm; VDD =1V.

SYMBOL PARAMETER CONDITIONS MAX. UNIT

VDD positive supply voltage 5.2 V

Tj(max) maximum operating junction temperature 150 °C

Tstg storage temperature 150 °C

Ptot total power dissipation note 1 2.0 W

Pi(LB) GSM input power 10 dBm

Pi(HB) DCS/PCS input power 10 dBm

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-c) thermal resistance from junction to case note 1 30 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supplies: pins VDD1LB, VDD2LB, RFO/VDD3LB, VDD1HB, VDD2HB and RFO/VDD3HB

VDD positive supply voltage note 1 0 3.5 4.2 V

IDD(LB) GSM positive peak supply current Pi(LB) = 0 dBm −2−A

note 2 0.5 1.5 3 A

IDD(HB) DCS/PCS positive peak supply current Pi(HB) = 3 dBm −1.5 −A

note 3 0.25 1 2 A

2000 Oct 16 6

Philips Semiconductors Product speciﬁcation

GSM/DCS/PCS power ampliﬁer CGY2014TT

AC CHARACTERISTICS

VDD = 3.5 V; Tamb =25°C; measured on the Philips demoboard (see Fig.8).

Notes

1. The device is adjusted to provide nominal load power into a 50 Ωload. The device is switched off and a 6 : 1 load

replaces the 50 Ωload. The device is switched on and the phase of the 6 : 1 load is varied 360 electrical degrees

during a 60 seconds test period.

2. The power amplifier can be matched to PCS and or DCS/PCS operation through optimization of the matching circuit.

3. Isolation can be improved to −20 dBm (typical value) with a pin diode switched in the DCS output matching.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Low band: GSM power ampliﬁer

Pi(LB) input power −2 0 +2 dBm

fRF(LB) RF frequency range 880 −915 MHz

Po(LB)(max) maximum output power see Figs 3 and 4 34.5 35 −dBm

ηLB efﬁciency see Fig.3 50 55 −%

Po(LB)(min) minimum output power VDD =0V;P

i(LB) = 0 dBm −−35 −dBm

NRX(LB) output noise in RX band Pi(LB) = 0 dBm

fRF = 925 to 935 MHz −−−117 dBm/Hz

fRF = 935 to 960 MHz −−−129 dBm/Hz

H2LB 2nd harmonic level Pi(LB) = 0 dBm −−−35 dBc

H3LB 3rd harmonic level Pi(LB) = 0 dBm −−−35 dBc

StabLB stability Pi(LB) = 0 dBm; note 1 −−−60 dBc

High band: DCS/PCS power ampliﬁer; note 2

Pi(HB) input power 2 3 5 dBm

fRF(HB) RF frequency range for DCS operation 1710 −1785 MHz

Po(HB)(max) maximum output power see Figs 5 and 6 32 32.5 −dBm

ηHB efﬁciency see Fig.5 38 40 −%

Po(HB)(min) minimum output power VDD =0V;P

i(HB) = 3 dBm −−32 −dBm

αHB high band isolation when

low band is operating VDD(LB) = 3.5 V; Pi(LB) = 0 dBm;

VDD(HB) =0V;P

i(HB) = 3 dBm;

note 3

−0−dBm

NRX(HB) output noise in RX band Pi(HB) = 3 dBm −−−121 dBm/Hz

H2HB 2nd harmonic level Pi(HB) = 3 dBm −−−35 dBc

H3HB 3rd harmonic level Pi(HB) = 3 dBm −−−35 dBc

StabHB stability Pi(HB) = 3 dBm; note 1 −−−60 dBc

2000 Oct 16 7

Philips Semiconductors Product speciﬁcation

GSM/DCS/PCS power ampliﬁer CGY2014TT

Performance characteristics in GSM band

handbook, halfpage

800 850

(dBm)

900 1000

(%)

950fRF (MHz)

FCA171

(3)

(2)

(1)

(3)

(2)

(1)

output power

efficiency

Fig.3 Outputpowerandefficiencyasafunctionof

the frequency.

(1) Tamb =85°C.

(2) Tamb =25°C.

(3) Tamb =−20 °C.

VDD1(LB) =3V.

DD2(LB) =V

DD3(LB) = 3.5 V.

Pi(LB) = 0 dBm.

handbook, halfpage

(dBm)

3VDD (V)

FCA176

(1)

(2)

(3)

Fig.4 Output power as a function of the supply

voltage.

(1) Tamb =85°C.

(2) Tamb =25°C.

(3) Tamb =−20 °C.

fRF(LB) = 900 MHz.

Pi(LB) = 0 dBm.

VDD1(LB) =3V.

DD =V

DD2(LB) =V

DD3(LB).

Performance characteristics in DCS band

handbook, halfpage

1650 1700

(dBm)

1750 1850

35.5

34.5

32.5

31.5

33.5

(%)

1800

fRF (MHz)

FCA172

(3)

(2)

(1)

(3)

(2)

(1)

output power

efficiency

Fig.5 Outputpowerandefficiencyasafunctionof

the frequency.

(1) Tamb =85°C.

(2) Tamb =25°C.

(3) Tamb =−20 °C.

VDD1(HB) =3V.

DD2(HB) =V

DD3(HB) = 3.5 V.

Pi(HB) = 3 dBm.

handbook, halfpage

(dBm)

3VDD (V)

FCA173

(1)

(2)

(3)

Fig.6 Output power as a function of the supply

voltage.

(1) Tamb =85°C.

(2) Tamb =25°C.

(3) Tamb =−20 °C.

fRF(HB) = 1750 MHz.

Pi(HB) = 3 dBm.

VDD1(HB) =3V.

DD =V

DD2(HB) =V

DD3(HB).

2000 Oct 16 8

Philips Semiconductors Product speciﬁcation

GSM/DCS/PCS power ampliﬁer CGY2014TT

APPLICATION INFORMATION

handbook, full pagewidth

FCA174

10 11

CGY2014TT

TRL2

TRL1

n.c.

TRL3

10 nF

3.9 nH

3.3 nH

100 pF

Vd23DCS

Vd1DCS

Vd1GSM

RFinGSM RFILB

RFinDCS

100 pF

1 nF

4.7

6 pF

4 pF

TRL6

TRL4 TRL5

BA891

56 pF

4.7 pF 9.1 pF

100 pF

3 pF

2.7 pF

5.6 pF

3.3 kΩ

1 nF

n.c. n.c.

n.c.

n.c.(1)

GND

RFIHB

VDD1HB

VDD2HB

VDD2LB

VDD1LB

RFO/VDD3HB

RFoutDCS

RFoutGSM

Vpin

RFO/VDD3HB

RFO/VDD3LB

GND1LB

Vd23GSM

Fig.7 Application diagram.

(1) Pin 16 is internally connected to ground and should not be connected to the board.

(2) Transmission lines:

Thickness 0.4 mm, substrate FR4 and εr= 4.7.

TRL1: width = 500 µm, length = 4.5 mm.

TRL2: width = 500 µm, length = 20 mm.

TRL3: width = 150 µm, length = 30 mm.

TRL4: width = 500 µm, length = 4 mm.

TRL5: width = 500 µm, length = 1.5 mm.

TRL6: width = 500 µm, length = 13 mm.

2000 Oct 16 9

Philips Semiconductors Product speciﬁcation

GSM/DCS/PCS power ampliﬁer CGY2014TT

handbook, full pagewidth

FCA175

CGY2014TT

3 pF

4.7 pF

9.1 pF

4 pF

1 pF

100 pF 100 pF

1 nF

6 pF

3.3 nH

4.7 pF 3.9 nH

10 nF

2.7 pF

100 pF

5.6 pF

BA891

56 pF

3.3 kΩ

1 nF

Fig.8 Part of layout of Philips demoboard.

Dimensions: approximately 19 mm ×19 mm.

2000 Oct 16 10

Philips Semiconductors Product speciﬁcation

GSM/DCS/PCS power ampliﬁer CGY2014TT

PACKAGE OUTLINE

UNIT A1A2A3bpcD

(1) E(2) Z(1)

DheLL

pywv θ

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 0.15

0.05 0.95

0.80 0.30

0.19 0.20

0.09 6.6

6.4 4.3

4.1

EhHE

3.1

2.9

4.5

4.3 0.65 6.6

6.2 0.5

0.2 8

0.13 0.10.21.0

DIMENSIONS (mm are the original dimensions)

Notes

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

2. Plastic interlead protrusions of 0.25 mm maximum per side are not included.

0.75

0.50

SOT527-1 99-11-12

00-07-12

heathsink side

0.25

110

20 11

detail X

(A )

vMA

0 2.5 5 mm

scale

HTSSOP20: plastic, heatsink thin shrink small outline package; 20 leads; body width 4.4 mm SOT527-1

max.

1.10

pin 1 index

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