Samsung SGH-E350 Manuel utilisateur

SGH-E350

SERVICE

Manual

GSMTELEPHONECONTENTS

1.Specification

2.Circuit Description

3. ExplodedViews and PartsList

4. ElectricalPartsList

5.BlockDiagrams

6.PCB Diagrams

7. FlowChartofTroubleshooting

GSMTELEPHONE

ELECTRONICS

Samsung ElectronicsCo.,Ltd.MAY2005

Printedin Korea.

CodeNo.:

BASIC.

ⓒ

hisServiceManual isa propertyofSamsung ElectronicsCo.,Ltd.

nyunauthorized use ofManualcan bepunished underapplicable

nternationaland/ordomesticlaw.

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1. SGH-E350 Specification

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1-1

PCS1900

1850~1910

1930~1990

512~810

80MHz

270.833kbps

3.692us

576.9us

4.615ms

0.3GMSK

30dBm~0dBm

0pcl~15pcl

-100dBm

1. GSMGeneralSpecification

GSM900

Phase1EGSM900

Phase2DCS1800

Phase1

Freq.Band[MHz]

Uplink/Downlink 890~915

935~960 880~915

925~960 1710~1785

1805~1880

ARFCNrange1~124 0~124 &

975~1023 512~885

Tx/Rxspacing 45MHz45MHz95MHz

Mod.Bit rate

/Bit Period 270.833kbps

3.692us270.833kbps

3.692us

TimeSlotPeriod

/FramePeriod 576.9us

4.615ms576.9us

4.615ms

Modulation 0.3GMSK0.3GMSK0.3GMSK

MS Power33dBm~5dBm33dBm~5dBm30dBm~0dBm

PowerClass 5pcl~19pcl5pcl~19pcl0pcl~15pcl

Sensitivity-102dBm-102dBm-100dBm

TDMAMux 8 8 8

Cell Radius35Km35Km2Km

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Specification

1-2

TXPower

control levelPCS1900

0 30±3 dBm

1 28±3 dBm

2 26±3 dBm

3 24±3 dBm

4 22±3 dBm

5 20±3 dBm

6 18±3 dBm

7 16±3 dBm

8 14±3 dBm

9 12±4 dBm

10 10±4 dBm

11 8±4dBm

12 6±4 dBm

13 4±4 dBm

14 2±5 dBm

15 0±5 dBm

2. GSMTXpower class

TXPower

control levelDCS1800

0 30±3 dBm

1 28±3 dBm

2 26±3 dBm

3 24±3 dBm

4 22±3 dBm

5 20±3 dBm

6 18±3 dBm

7 16±3 dBm

8 14±3 dBm

9 12±4 dBm

10 10±4 dBm

11 8±4dBm

12 6±4 dBm

13 4±4 dBm

14 2±5 dBm

15 0±5 dBm

TXPower

control levelGSM900

5 33±3 dBm

6 31±3 dBm

7 29±3 dBm

8 27±3 dBm

9 25±3 dBm

10 23±3 dBm

11 21±3 dBm

12 19±3 dBm

13 17±3 dBm

14 15±3 dBm

15 13±3 dBm

16 11±5 dBm

17 9±5 dBm

18 7±5 dBm

19 5±5 dBm

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2. SGH-E350 Circuit Description

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2-1

1. SGH-E350 RFCircuitDescription

1)RXPART

1.FRONT END MODULE(ANTENNA SWITCHMODULE +RXSAWFILTER) (MODULE1)

→Switching Tx,Rx pathforGSM900,DCS1800 and PCS1900 by logic controlling.

2.FRONT END MODULE ControlLosic(MODULE1)→TruthTable

VC1VC2VC3

TxMode(GSM900)HL L

TxMode(DCS1800/1900)LH H(L)

RxMode(GSM900)L L L

RxMode(DCS1800)L L L

RxMode(PCS1900)L L H

3.VC-TCXO (U102)

Thismodulegeneratesthe26MHzreference clockto drivethelogic and RF.

It isturnedonwhenthesupply voltage +VCC_SYN isapplied.

Afterbuffering areference clock of26MHzis suppliedtotheotherpartsofthesystem

through thetransceiverpinOUT.

4.TRANSCEIVER(U100)

ThischipisfullyintegratedGSMGPRStri-band transceiverwithVCO,loop filtersand mostofthe

passive component init.

And alsofullyintegratedfractionalNRFsynthesizerwithAFCcontrolpossibility,RFVCO withintegratedsupply

regulator.Semi integratedreference oscillatorwithintegratedsupplyregulator.

RFReceiver front-end amplifiestheE-GSM900,DCS1800 and PCS1900 aerialsignal,convert the chosenchannel

downtoalowIFof100kHz.

InIFsection,furtheramplifiesthewantedchanneloutput level tothedesired value and rejectsDC.

2)TXPART

Thetransmitterisfully differentialusing adirectup conversion architecture.Itconsistsofasignalsideband

powerup mixer.Gainiscontrolled by 6 dBvia3-wireserialbusprograming.ThefullyintegratedVCOand power

mixerachieveLOsuppression,quadraturephase error,quadrature amplitudebalance and lownoisefloorspecification.

Outputmatching/balun componentsdrive a standard 50 ohms single endedload.

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CircuitDescription

2-2

2. Baseband CircuitdescriptionofSGH-E350

1.PCF50603 (U400)

1.1.PowerManagement

Eight low-dropoutregulatorsdesignedspecificallyforGSMapplicationspowertheterminaland helpensureoptimal

systemperformance and long batterylife.Aprogrammableboostconverterprovides supportfor1.8V,3.0VSIMs,

whileaself-resetting,electronicallyfusedswitchsuppliespowertoexternalaccessories.Ancillarysupportfunctions,

suchasRTCmodule and High VoltageChargepump,Clock generator,aidinreducing both boardarea and system

complexity.

I2C BUSserial interface providesaccess tocontroland configuration registers.Thisinterface givesamicroprocessor

full controlofthePCF50603 and enables systemdesignerstomaximize bothstandby and talktimes.

Supervisoryfunctions.including aresetgenerator,aninputvoltagemonitor,and atemperaturesensor,supportreliable

systemdesign.Thesefunctionsworktogethertoensurepropersystembehaviorduring start-up orinthe eventofa

fault condition(lowmicroprocessorvoltage,insufficientbatteryenergy,orexcessivedietemperature).

1.2.BacklightBrightness Modulator

TheBacklightBrightness Modulator (BBM)containsaprogrammablePulse-widthmodulator (PWM)and FET to

modulatetheintensity ofaseriesofLED?sortocontrolaDC/DCconverterthatdrivesLCDbacklight.

Thisphone(SGH-E350)usePWMcontrol tocontrast thebacklightbrightness.

1.3.ClockGenerator

TheClockGenerator (CG)generatesall clocksforinternaland externalusage.The32.768 kHz crystaloscillator

providesanaccuratelowclockfrequencyforthePCF50603 and othercircuitry.

2.LCDConnector

LCDisconsisted ofmainLCD(color6.5KTFT LCD).

ChipselectsignalsintheU305,LCD_CS,canenableLCD.BACKLIGHTsignalenableswhiteLEDofmainLCD.These

signal isfromU400.

16-bit datalines(LD(0)~LD(15)) transfersdata and commandstoLCD.Data and commandsuse"RS"signal.If this signal

ishigh,InputstoLCDare commands.If it islow,InputstoLCDaredata.Thesignalwhichinformstheinputoroutput

statetoLCD,isrequired.But this systemisnotnecessarythis signal.So"L_WR"signal isusedtowritedataor

commandstoLCD.PowersignalsforLCDare"VDD_IO_HIGH".

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CircuitDescription

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2-3

4.Key

Thisisconsisted ofkeyinterface pinsKEY_ROW(0:4)and KEY_COL(0:4)inPCF5213EL1.Thesesignalscomposethe

matrix.Result ofmatrixinformsthekeystatusto keyinterface inthePCF5213EL1.Poweron/off keyis seperatedfrom

thematrix.So poweron/off signal isconnectedwithPCF50603 toenablePCF50603.KeyLEDisconsisted ofsixteen

blueLEDs.

keyLEDusethe3.3VLDO(U606) forasupply voltage.KEY_LED_ON signalenableseightwhiteLED.

"FLIP"informsthestatusofslide(up ordown)tothePCF5213EL1.Thisusesthehall effectIC,EM-1681-FT(U607).

AmagnetunderLCDenablesEM-1681-FT.

5.EMIESDFilter(F501,F502)

This systemusestheEMIESDfilter,F501,F502 to protectnoisefromIFCONNECTORpart.

6.IFconnetor(IFC500)

It is18-pinconnector.Theyaredesignedto useVBAT,V_EXT_CHARGE,USB_D+,+VBUS,USB_D-,TXD1,RXD1,

AUX_ON,EXT1,EXT2and GND.Theyconnectedto powersupplyIC,microprocessorand signalprocessor IC.

7.BatteryChargeManagementIC(U501)

Acomplete constant-current/constant-voltagelinearcharger forsingle cell lithium-ion batteriesisused.

If TAconnectedto phone,"V_EXT_CHARGE"enable charger ICand supplycurrent to battery.

Whenfault condition caused,"CHG_ON"signal levelchangelowto high and charger ICstop charging process.

8.Audio

HFR_Pand HFR_NfromPCF5213EL1are connectedtothemainspeakervia analog switches.MIC_Pand MIC_N

are connectedtothemainMICaswell.EAR1isthesource ofExternalSpeaker.YMU762 isasynthesizerLSI for

mobilephones.ThisLSIhasabuilt-inspeakeramplifier foroutputting soundsthatareused by mobilephonesinaddition

to gamesoundsand ringing melodiesthatarereplayed by asynthesizer.

Thesynthesizersection adopts“stereophonichybridsynthesizersystem”thataregivenadvantagesofbothFM

synthesizersand WaveTablesynthesizerstoallowsimultaneousgeneration ofup to32FMvoicesand 32 Wave

Tablevoices.

Itprovides simultaneousgeneration ofup to40tonesby stereophonichybridsynthesizer.

YMU762 hasbuilt aspeakeramplifierofwhichmaximumout is580 mWatSPVDD=3.6Vinthisdevice.

ThereisStereophonic analog outputforHeadphone.

9.Memory(U303)

This systemusesSamsung'smemory,KAP17SG00A.TheKAP17SG00AisaMulti ChipPackageMemorywhich

combines256Mbit SynchronousBurstMulti Bank NORFlashMemoryand two 512Mbit OneNAND Flashand

128Mbit SynchronousBurstUtRAM.

Ithas16 bit dataline,HD[1~16]whichisconnectedtoPCF5213EL1and MV3018SAQ,also has24 bit address lines,

HA[1~24].There are3chipselectsignals,CS0n_FLASH,CS4n_NAND,and CS1n_RAM.

IntheWriting process,WEnisfallentolowand it enableswriting process to operate.During reading process,

OEnisfallentolowand it enablesreading process to operate.EachchipselectsignalsinthePCF5213EL1choose

differentmemories.

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CircuitDescription

2-4

10.PCF5213EL1(U200)

ThePCF5213EL1ismainlycomposed ofembededDSP and ARMcore.TheDSP subsystemincludestheSaturn

DSP corewithembeddedRAMand ROM,and asetofperipherals.Ithas24kx16 bitsPRAM,104k*16 bits,

32k*16 XYRAMand 63k*16 XYROMintheDSP.

TheARM946E-SconsistsofanARM9E-Sprocessorcore,8 kbyteinstruction cache and 8 kbytedata cache,

tghtly-coupledITCM(Instruction TightlyCoupledMemory)and DTCM(DataTightlyCoupledMemory)memories,a

memory protection unit,and anAMBA(AdvancedMicrocontrollerBusArchitecture)AHB(Advanced

High-performance Bus)businterface withawritebuffer.

HD(0:15),datalinesand HA(0:23),address linesare connectedtoKAP17SG00A(memory),MV3018B(imagedsp)

and YMU762 (melody IC).Ithas64 kbyteSC RAM(0.5Mbit)and 32 kbyteSCprogramROMforbootstrap

loaderintheARMcore.

HD(0:15),datalinesand HA(0:23),address linesare connectedtomemoryand YMU762 tocommunicate.

MV3018B(CameraDSP Chip)controlsthe communication betweenARMcore and DSP core.

OEn,WEncontrol the access ofmemory.KROW,and KCOLrecognize thekeystring inputstatus.

Ithas J-TAG controlpins(TDI/TDO/TCK) forARMand DSP core.J-SEL signalcontrolsdifferentaccess toARM

and DSP core.

ADC(Analog toDigitalConvertor) receivesthe condition oftemperature,batterytype and battery voltage.

11.TCO-5871U(26MHz)(U102)

This systemusesthe26MHzTCXO,TCO-5871U,Toyocom.AFCcontrolsignalformPCF5213EL1controls

frequencyfrom26MHzx-tal.Itgeneratesthe clockfrequency.ThisclockisconnectedtoPCF5213EL1,YMU762 and

HD155166.

12.CameraDSP(MV3018SAQ)(U305)

MV3018SAQ providesrich videofunctionsup to 30-framedisplaywithminimizedtasksinthehandsetmain processor

aswell ashardwarebasedreal-timeJPEGcompression and decompression.MV3018SAQ directlytransmitsand

previewstheRGBdatatotheLCDgraphicmemory by processing thesensoroutputdata according tothe

handset'scommand.ItcansavetherawRGBdataup toVGA resoultion intoitsimagebufferand allowsthe

hostprocessorto downloadwithscalablesizedcompressed data.

Itutilizes16 bit databusforcommunication withthemain processor,including businterface types.

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3. SGH-E350 Exploded View and its Parts list

3-1

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1. Exploded View

QFU01

QKP02

QMP02

QFL01

QCR05

QSC01

QSP01

QMO01

QME02

QLC01

QVK01

QAN02

QRF01

QRF03

QVO01

QCW01

QFR01

QKP01

QMP01

QRE01

QCK01

QCA01

QIF01

QCR06

QBA01

QMI01

QCA02

QME01

QPC01

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Exploded view and its Part list

3-2

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2. Parts list

Location NO. Description SEC CODE

QAN02 ㅤINTENNA-SGHE350;EWPADF013A,SGH-E350, GH42-00592A

QBA01 ㅤBATTERY-800MAH,B SIL,ORA,M;BST4208SO GH43-01920C

QCA01 ㅤUNIT-CAMERA;SGH-E350,MOMBH150G1A,-,E GH59-02179A

QCA02 ㅤUNIT-CAMERA KEY;SGH-E350,SGH-E350 C/ GH59-02183A

QCR05 ㅤSCREW-MACHINE;PH,+,M1.4,L3,ZPC(BLK), 6001-001478

QCR06 ㅤSCREW-MACHINE;PH(PI2.5),+,M1.4,L3.5, 6001-001155

QCW01 ㅤMEC-CAMERA WINDOW;SGH-E350,EU,-,-,-, GH75-07339A

QFL01 ㅤMEC-SLIDE LOWER;SGH-E350,EU,-,-,-,-, GH75-07260A

QFR01 ㅤMEC-FRONT COVER;SGH-E350,EU,-,-,-,-, GH75-07261A

QFU01 ㅤMEC-SLIDE UPPER;SGH-E350,EU,-,-,-,-, GH75-07259A

QIF01 ㅤPMO-IF COVER;SGH-E350,PC(G6656)+URET GH72-20661A

QKP01 ㅤMEC-KEYPAD MAIN;SGH-E350,EU,-,-,-,-, GH75-07285A

QKP02 ㅤMEC-KEYPAD SUB;SGH-E350,EU,-,-,-,-,B GH75-07284A

QLC01 ㅤLCD-SGHE350;LTS166QQ-F02,SGH-E350,12 GH07-00729A

QME01 ㅤUNIT-METAL DOME(MAIN);SGH-E350,SGH-E GH59-02182A

QME02 ㅤUNIT-METAL DOME(SUB);SGH-E350,SGH-E3 GH59-02181A

QMI01 ㅤMICROPHONE-ASSY-SGHE350;1,130to500uA GH30-00203A

QMO01 ㅤMOTOR DC-SGHE350;JHV-10A1-F13,SGH-E3 GH31-00176A

QMP01 ㅤPBA MAIN-SGHE350EDGE;SCH-E350,TINY,E GH92-02179A

QMP02 ㅤPBA SUB-SGHE350;SGH-E350,TINY,EU,PBA GH92-02206A

QPC01 ㅤPCB-FPCB CABLE;SGH-E350,POLYIMIDE,3L GH41-00882A

QRE01 ㅤMEC-REAR COVER(FTM);SGH-E350E,FTM,-, GH75-07332A

ㅤQVO01 PMO-VOLUME KEY;SGH-E350,ABS+URETHAN, GH72-20665A

ㅤQCK01 PMO-CAMERA KEY;SGH-E350,ABS+URETHAN, GH72-20666A

QRF01 ㅤMPR-SHEET RF COVER;SGH-E350,PC SHEET GH74-16395A

QRF03 ㅤPMO-EAR COVER V2;SGH-E350,PC(G71770C GH72-22634A

QSC01 ㅤMPR-SLIDE/L SCREW SHEET;SGH-E350,PC GH74-16356A

QSP01 ㅤSPEAKER;0.7W,8ohmohm,122dB±2dB,850H 3001-001782

QVK01 ㅤUNIT-VOLUME KEY;SGH-E350,SGH-E350 V/ GH59-02180A

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