Philips BGY148A Manuel utilisateur

DATA SHEET

Product speciﬁcation

Supersedes data of 1997 Jul 14 1998 May 13

DISCRETE SEMICONDUCTORS

BGY148A; BGY148B

HF amplifier modules

ook, halfpage

M3D188

1998 May 13 2

Philips Semiconductors Product speciﬁcation

HF ampliﬁer modules BGY148A; BGY148B

FEATURES

•Single 6 V nominal supply voltage

•3 W output power

•Easy control of output power by DC voltage

•Silicon bipolar technology

•Standby current less than 100 µA.

APPLICATIONS

•Portable communication equipment operating in the

400 to 440 MHz and 430 to 488 MHz frequency ranges

respectively.

DESCRIPTION

The BGY148A and BGY148B are three-stage UHF

amplifier modules in a SOT421A package. Each module

consists of three NPN silicon planar transistor dies

mounted together with matching and bias circuit

components on a metallized ceramic substrate. The

modules produce an output power of 3 W into a load of

50 Ωwith an RF drive power of 10 mW.

PINNING - SOT421A

PIN DESCRIPTION

1 RF input

4 RF output

Flange ground

Fig.1 Simplified outline (SOT421A).

handbook, halfpage

MSA483

12 34

Top view

QUICK REFERENCE DATA

RF performance at Tmb =25°C.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. In order to control the mounting-base temperature, proper heatsinking of the underside of the device is required.

It is therefore advisable that the device is mounted on a printed-circuit board with metallized through holes.

TYPE MODE OF

OPERATION f

(MHz) VS

(V) PL

(W) Gp

(dB) η

(%) ZS; ZL

(Ω)

BGY148A CW 400 to 440 6 ≥3≥24.8 typ. 53 50

BGY148B CW 430 to 488 6 ≥3≥24.8 typ. 53 50

SYMBOL PARAMETER MIN. MAX. UNIT

VSDC supply voltage −8.5 V

VCDC control voltage −4V

Dinput drive power −20 mW

PLload power −3.5 W

Tstg storage temperature −40 +100 °C

Tmb operating mounting-base temperature; note1 −30 +100 °C

1998 May 13 3

Philips Semiconductors Product speciﬁcation

HF ampliﬁer modules BGY148A; BGY148B

CHARACTERISTICS

ZS=Z

L=50Ω;P

D= 10 mW; VS= 6 V; VC≤3.5 V; Tmb =25°C; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

f frequency range

BGY148A 400 −440 MHz

BGY148B 430 −488 MHz

IQtotal quiescent current VC= 0; PD=0 −−100 µA

ICcontrol current adjust VCfor PL=3W −−500 µA

PLload power 3 −−W

ppower gain adjust VCfor PL= 3 W 24.8 −−dB

ηefﬁciency adjust VCfor PL=3W 46 53 −%

2second harmonic adjust VCfor PL=3W −−−38 dBc

H3third harmonic adjust VCfor PL=3W −−−38 dBc

VSWRin input VSWR adjust VCfor PL=3W −−3:1

control range VC= 0 to 3.5 V 10 −−dB

stability PD= 5 to 20 mW; VS= 5 to 8.5 V;

PL≤3.5 W;

VSWR ≤4 : 1 through all phases

−−−60 dBc

ruggedness VS= 8.5 V; adjust VCfor PL= 3.5 W;

VSWR ≤4 : 1 through all phases no degradation

Fig.2 Load power derating curves.

VS= 8.5 V.

handbook, halfpage

0 100

(W)

Tmb (oC)

20 40 60 80

MDA207

VSWR = 3:1

VSWR = 1:1

1998 May 13 4

Philips Semiconductors Product speciﬁcation

HF ampliﬁer modules BGY148A; BGY148B

Fig.3 Load power as a function of control voltage;

BGY148A; typical values.

ZS=Z

L=50Ω; PD= 10 mW; VS= 6 V; Tmb =25°C.

handbook, halfpage

(W)

MGD553

2VC (V)

400 MHz

440 MHz

Fig.4 Efficiency as a function of load power;

BGY148A; typical values.

ZS=Z

L=50Ω; PD= 10 mW; VS= 6 V; Tmb =25°C.

handbook, halfpage

012 P

(W) 43

MGD554

(%) 440 MHz400 MHz

Fig.5 Loadpowerasafunctionoffrequency;

BGY148A; typical values.

ZS=Z

L=50Ω; PD= 10 mW; VS= 6 V; VC= 3.5 V; Tmb =25°C.

handbook, halfpage

380 400

(W)

460440

MGD555

420 f (MHz)

Fig.6 Efficiencyasafunctionoffrequency;

BGY148A; typical values.

ZS=Z

L=50Ω; PD= 10 mW; VS= 6 V; PL= 3 W; Tmb =25°C.

handbook, halfpage

380

0400 420 f (MHz) 460440

MGD556

(%)

1998 May 13 5

Philips Semiconductors Product speciﬁcation

HF ampliﬁer modules BGY148A; BGY148B

Fig.7 Control voltage and input VSWR as functions

of frequency; BGY148A; typical values.

ZS=Z

L=50Ω; PD= 10 mW; VS= 6 V; PL= 3 W; Tmb =25°C.

handbook, halfpage

(V) VSWRin

3.0

2.5

2.0

1.5

1.0

460440 f (MHz)

400380

MGD557

420

VSWRin

Fig.8 Harmonics as a function of frequency;

BGY148A; typical values.

ZS=Z

L=50Ω; PD= 2 mW; VS= 4.8 V; PL= 3 W; Tmb =25°C.

−30

−40

−60

−50

380 400 420 440 f (MHz)

MGD558

460

H2, H3

(dBc)

Fig.9 Load power as a function of mounting base

temperature; BGY148A; typical values.

ZS=Z

L=50Ω; PD= 2 mW; VS= 4.8 V; Tmb =25°C.

handbook, halfpage

−25 100

(W)

Tmb (oC)

0255075

MDA206

400 MHz

440 MHz

1998 May 13 6

Philips Semiconductors Product speciﬁcation

HF ampliﬁer modules BGY148A; BGY148B

Fig.10 Load power as a function of control voltage;

BGY148B; typical values.

ZS=Z

L=50Ω; PD= 10 mW; VS= 6 V; Tmb =25°C.

handbook, halfpage

(W)

MGD559

2VC (V)

430 MHz

488 MHz

Fig.11 Efficiency as a function of load power;

BGY148B; typical values.

ZS=Z

L=50Ω; PD= 10 mW; VS= 6 V; Tmb =25°C.

handbook, halfpage

012 P

(W) 43

MGD560

(%)

430 MHz

488 MHz

Fig.12 Load power as a function of frequency;

BGY148B; typical values.

ZS=Z

L=50Ω; PD= 10 mW; VS= 6 V; VC= 3.5 V; Tmb =25°C.

handbook, halfpage

420 440

(W)

500480

MGD561

460 f (MHz)

Fig.13 Efficiency as a function of frequency;

BGY148B; typical values.

ZS=Z

L=50Ω; PD= 10 mW; VS= 6 V; PL= 3 W; Tmb =25°C.

handbook, halfpage

420

0440 460 f (MHz) 500480

MGD562

(%)

1998 May 13 7

Philips Semiconductors Product speciﬁcation

HF ampliﬁer modules BGY148A; BGY148B

Fig.14 ControlvoltageandinputVSWRasfunctions

of frequency; BGY148B; typical values.

ZS=Z

L=50Ω; PD= 10 mW; VS= 6 V; PL= 3 W; Tmb =25°C.

handbook, halfpage

(V) VSWRin

3.0

2.5

2.0

1.5

1.0

500480 f (MHz)

440420

MGD563

460

VSWRin

Fig.15 Harmonicsas afunction offrequency;

BGY148B; typical values.

ZS=Z

L=50Ω; PD= 2 mW; VS= 4.8 V; PL= 3 W; Tmb =25°C.

−30

−40

−70

−60

−50

420 440 460 480 f (MHz)

MGD564

500

H2, H3

(dBc)

Fig.16 Load power as a function of mounting base

temperature; BGY148B; typical values.

ZS=Z

L=50Ω; PD= 2 mW; VS= 4.8 V; Tmb =25°C.

handbook, halfpage

−25 100

(W)

Tmb (oC)

0255075

MDA205

430 MHz

488 MHz

1998 May 13 8

Philips Semiconductors Product speciﬁcation

HF ampliﬁer modules BGY148A; BGY148B

SOLDERING

The indicated temperatures are those at the solder

interfaces.

Advised solder types are types with a liquidus less than or

equal to 210 °C.

Solder dots or solder prints must be large enough to wet

the contact areas.

Soldering can be carried out using a conveyor oven, a hot

airoven, an infraredovenor a combinationofthese ovens.

A double reflow process is permitted.

Hand soldering must be avoided because the soldering

irontipcan exceed the maximumpermittedtemperatureof

250 °C and damage the module.

The maximum allowed temperature is 250 °C for

5 seconds.

The maximum ramp-up is 10 °C per second.

The maximum cool-down is 5 °C per second.

Cleaning

The following fluids may be used for cleaning:

•Alcohol

•Bio-Act (Terpene Hydrocarbon)

•Acetone.

Ultrasonic cleaning should not be used since this can

cause serious damage to the product.

Fig.17 Recommended reflow temperature profile.

handbook, halfpage

300

200

100

015234

MGM159

t (min)

(°C)

1998 May 13 9

Philips Semiconductors Product speciﬁcation

HF ampliﬁer modules BGY148A; BGY148B

Dimensions in mm.

Fig.18 SOT421A footprint.

handbook, full pagewidth

MGK391

8.45

0.6 2.7

22.6

2.4

2.6

0.4

0.8

7.48

15.1

20.18

DETAIL

0.1

2.7

1.5

1.7

0.5

0.7

1.1

2.9

DETAIL

footprint metallization

solder area.

handbook, full pagewidth

MGK392

7.05

3.2

21.8

1.7

1.8

0.8

7.08

14.7

19.78

solder area.

1998 May 13 10

Philips Semiconductors Product speciﬁcation

HF ampliﬁer modules BGY148A; BGY148B

PACKAGE OUTLINE

UNIT cDdEe

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 5.08 7.62

0.56

0.46

3.0

2.6 0.30

0.20 22.1

21.7 2.4

2.0 13.4

13.0 0.7

0.3 0.25 0.15

DIMENSIONS (mm are the original dimensions)

SOT421A 97-06-20

0 5 10 mm

scale

22.4

22.0

8.2

7.8

3.4

3.0

0.25

0.05

wye

Ceramic single-ended flat package; 4 in-line leads SOT421A

e e

12 34

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