NXP Semiconductors UM11697 Manuel utilisateur
UM11697
RDGD31603PSMKEVM three-phase inverter kit
Rev. 1 — 10 December 2021 User manual
Document information
Information Content
Keywords GD3160, gate, driver, power, inverter, Automotive
Abstract The RDGD31603PSMKEVM three-phase inverter is a functional hardware
power inverter reference design which can be used as a foundation to
develop a complete ASIL-D compliant high voltage, high-power traction
motor inverter for electric vehicles. The kit can be used as a double pulse and
short circuit tester to measure key switching parameters, or as a three-phase
inverter for motor control.
NXP Semiconductors UM11697
RDGD31603PSMKEVM three-phase inverter kit
Revision History
Rev Date Description
UM11697 v.1 20211210 Initial version
Revision history
UM11697 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2021. All rights reserved.
User manual Rev. 1 — 10 December 2021
2 / 39
NXP Semiconductors UM11697
RDGD31603PSMKEVM three-phase inverter kit
Important notice
NXP provides the enclosed product(s) under the following conditions:
This reference design is intended for use of ENGINEERING DEVELOPMENT OR
EVALUATION PURPOSES ONLY. It is provided as a sample IC pre-soldered to a printed
circuit board to make it easier to access inputs, outputs, and supply terminals. This
reference design may be used with any development system or other source of I/O
signals by simply connecting it to the host MCU or computer board via off-the-shelf
cables. The final device in an application will be heavily dependent on proper printed
circuit board layout and heat sinking design, as well as attention to supply filtering,
transient suppression, and I/O signal quality.
The goods provided may not be complete in terms of required design, marketing, and/
or manufacturing related protective considerations, including product safety measures
typically found in the end product incorporating the goods. Due to the open construction
of the product, it is the user's responsibility to take any and all appropriate precautions
with regard to electrostatic discharge. In order to minimize risks associated with the
customer's applications, adequate design and operating safeguards must be provided
by the customer to minimize inherent or procedural hazards. For any safety concerns,
contact NXP sales and technical support services.
UM11697 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2021. All rights reserved.
User manual Rev. 1 — 10 December 2021
3 / 39
NXP Semiconductors UM11697
RDGD31603PSMKEVM three-phase inverter kit
1 Introduction
This document is the user guide for the RDGD31603PSMKEVM reference design. It
is intended for engineers involved in evaluation, design, implementation and validation
using GD3160, a single-channel gate driver for insulated-gate bipolar transistor/silicon
carbide (IGBT/SiC) devices.
The scope of this document is to provide the user with information to evaluate the
GD3160. The kit can be used as a double pulse and short circuit tester to measure
key switching parameters or used as a three phase inverter for motor control. This
document covers connecting the hardware, installing the software and tools, configuring
the environment and using the kit.
The RDGD31603PSMKEVM is a fully functional three-phase inverter evaluation
board populated with six GD3160 gate drivers with fault management and supporting
circuitry. This board supports SPI daisy chain communication for programming and
communication with three high-side gate drivers and three low-side gate drivers
independently.
This board has low-voltage and high-voltage isolation in conjunction with gate drive
integrated galvanic signal isolation. Other supporting features on the board include
desaturation short-circuit detection, IGBT/SiC temperature sensing, and DC Link bus
voltage monitoring. See the GD3160 data sheet for additional gate drive features.
2 Finding kit resources and information on the NXP web site
NXP Semiconductors provides online resources for this reference design and its
supported device(s) on http://www.nxp.com.
The information page for the RDGD31603PSMKEVM reference design is at
www.nxp.com/RDGD31603PSMKEVM. This page provides overview information,
documentation, software and tools, parametrics, ordering information and a Getting
Started tab. The Getting Started tab provides quick-reference information applicable to
using the RDGD31603PSMKEVM reference design, including the downloadable assets
referenced in this document.
2.1 Collaborate in the NXP community
The NXP community is for sharing ideas and tips, asking and answering technical
questions, and receiving input on just about any embedded design topic.
The NXP community is at http://community.nxp.com.
3 Getting started
Working with the RDGD31603PSMKEVM requires kit contents and a Windows PC
workstation with FlexGUI software installed.
3.1 Kit contents
•Assembled and tested RDGD31603PSMKEVM (three-phase inverter populated with
5.0 V compatible gate driver devices) board in an anti-static bag
UM11697 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2021. All rights reserved.
User manual Rev. 1 — 10 December 2021
4 / 39
NXP Semiconductors UM11697
RDGD31603PSMKEVM three-phase inverter kit
•3.3 V to 5.0 V translator board connected to FRDM-KL25Z MCU (KITGD3160TREVB)
with micro-USB cable for using FlexGUI software control
•Quick Start Guide
3.2 Additional hardware
In addition to the kit contents, the following hardware is necessary or beneficial when
working with this kit.
•Microcontroller for SPI communication
•Compatible eMPack power module from Semikron
•DClink capacitor compatible with eMPack power module
•HV power supply with protection shield and hearing protection
•Current sensors for monitoring each phase current
•12 V, 1.0 A DC power supply
•4-channel oscilloscope with appropriate isolated probes
3.3 Windows PC workstation
This reference design requires a Windows PC workstation. Meeting these minimum
specifications should produce great results when working with this reference design.
•USB-enabled computer with Windows 8 or Windows 10
3.4 Software
The Flex GUI software must be installed in order to use this kit. All listed software is
available on the information page at http://www.nxp.com/RDGD31603PSMKEVM.
•Flex GUI software for using with KITGD3160TREVB MCU/translator board
4 Getting to know the hardware
4.1 RDGD31603PSMKEVM features
•Capability to perform double pulse and short-circuit tests on Phase U using
KITGD3160TREVB and FlexGUI. See schematics for phase U and FlexGUI Pulse tab
(Figure 32 and Figure 33)
•Evaluation board designed for and populated with GD3160 Gate Drivers and protection
circuitry
•Capability to connect to eMPack specific modules for full three-phase evaluation and
development (see Figure 8 for specific module pin placement)
•Daisy chain SPI communication (three high-side and three low-side gate drivers)
•Variable fly-back VCC power supply with GND reference and variable VEE supply
•Easy access power, ground, and signal test points
•Optional connection for DC bus voltage monitoring
UM11697 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2021. All rights reserved.
User manual Rev. 1 — 10 December 2021
5 / 39
NXP Semiconductors UM11697
RDGD31603PSMKEVM three-phase inverter kit
4.2 Kit featured components
4.2.1 Voltage domains, GD3160 pinout, logic header, and IGBT pinout
The low-voltage domain is an externally supplied 12 V DC (VPWR) primary supply for
non- isolated circuits, typically supplied by a vehicle battery. The low-voltage domain
includes the interface between the MCU and GD3160 control registers and logic control.
The low-side driver and high-side driver domains are isolated high-voltage driver control
domains for SiC MOSFET or IGBT single phase connections and control circuits. The
pins on the bottom of the board are designed to easily connect to a compatible three-
phase SiC MOSFET or IGBT module.
Figure 1. RDGD3160PSMKEVM three-phase inverter board voltage domains and interfaces
4.2.2 GD3160 pinout and MCU interface pinout
See the GD3160 advanced IGBT/SiC gate driver data sheet for specific information
about pinout, pin descriptions, specifications, and operating modes. The VSUP/VPWR
DC supply terminal is a low voltage input connection for supplying power to the low
voltage non- isolated die and related circuitry. A GD3160 application is typically supplied
by a +12 V DC vehicle battery.
The KITGD3160TREVB MCU/translator included with the kit can be attached to this
board at the 24 pin dual row header pin interface. All gate drivers can be accessed via
SPI control using FlexGUI software.
The external connector (20 pin) can be used for monitoring interrupts, PWM inputs, and
other miscellaneous logic I/O signals from gate drive devices. See schematic for details.
UM11697 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2021. All rights reserved.
User manual Rev. 1 — 10 December 2021
6 / 39
NXP Semiconductors UM11697
RDGD31603PSMKEVM three-phase inverter kit
Note: Double pulse and short-circuit tests can be conducted on Phase U only. See
FlexGUI Pulse tab, see Figure 32 and Figure 33.
Figure 2. Gate driver pinout and board interface connections
Pin Name Function
1 AOUTLU GD3160 analog output signal low-side U phase
2 n.c. not connected
Table 1. MCU connector (J38) pin definitions
UM11697 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2021. All rights reserved.
User manual Rev. 1 — 10 December 2021
7 / 39
NXP Semiconductors UM11697
RDGD31603PSMKEVM three-phase inverter kit
Pin Name Function
3 CSBL Chip select bar to low-side gate drivers
4 n.c. not connected
5 PWMLU Pulse width modulation low-side phase U
6 INTB LOW SIDE GD3160 fault reporting/monitoring output pin for low-side devicees
7 MOSI_MICRO SPI target in signal
8 SCLK SPI clock
9 MISO_MICRO_N SPI target out signal
10 n.c. not connected
11 FSSTATEL Fail-safe state low-side input
12 GND Ground
13 FSENB_MICRO Fail-safe enable bar input
14 n.c. not connected
15 INTALU GD3160 fault reporting/monitoring output pin for low-side phase U
16 n.c. not connected
17 INTAHU GD3160 fault reporting/monitoring output pin for high-side phase U
18 CSBH Chip select bar to high-side gate drivers
19 LED_PWR 5 V pull-up for LED interrupt indicators
20 AOUTHU GD3160 analog output signal high-side U phase
21 PWMHU Pulse width modulation high-side phase U
22 FSSTATEH Fail-safe state high-side input
23 GND Ground
24 INTB_HIGH SIDE GD3160 fault reporting/monitoring output pin for high-side
Table 1. MCU connector (J38) pin definitions...continued
Pin Name Function
1 GND ground
2 PWMHU Pulse width modulation input high-side phase U
3 GND ground
4 PWMLU Pulse width modulation input low-side phase U
5 GND ground
6 PWMHV Pulse width modulation input high-side phase V
7 AOUTLU GD3160 duty cycle encoded analog output signal low-side U phase
8 PWMLV Pulse width modulation input low-side phase U
9 INTAHU GD3160 fault reporting/monitoring output pin for high-side phase U
10 PWMHW Pulse width modulation input high-side phase W
11 INTALU GD3160 fault reporting/monitoring output pin for low-side phase U
Table 2. External connector (J38) pin definition
UM11697 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2021. All rights reserved.
User manual Rev. 1 — 10 December 2021
8 / 39
NXP Semiconductors UM11697
RDGD31603PSMKEVM three-phase inverter kit
Pin Name Function
12 PWMLW Pulse width modulation input low-side phase W
13 INTAHV GD3160 fault reporting/monitoring output pin for high-side phase V
14 AOUTLW GD3160 analog output signal low-side W phase
15 INTALV GD3160 fault reporting/monitoring output pin for low-side phase V
16 INTB_HIGH SIDE GD3160 fault reporting output all high-side gate drivers
17 INTAHW GD3160 fault reporting/monitoring output pin for high-side phase W
18 INTB_LOW SIDE GD3160 fault reporting output all low-side gate drivers
19 INTALW GD3160 fault reporting/monitoring output pin for low-side phase W
20 FSENB EXT Active-low Fail Safe control input (leave open if unused)
Table 2. External connector (J38) pin definition...continued
4.2.3 Test points
All test points are clearly marked on the board. The following figure shows the location of
various test points.
Figure 3. RDGD31603PSMKEVM test points
Test point name Function
DSTHU DESAT high-side U phase VCE desaturation connected to DESAT pin circuitry
DSTLU DESAT low-side U phase VCE desaturation connected to DESAT pin circuitry
GHU Gate high-side U phase
GHV Gate high-side V phase
Table 3. Test points
UM11697 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2021. All rights reserved.
User manual Rev. 1 — 10 December 2021
9 / 39
NXP Semiconductors UM11697
RDGD31603PSMKEVM three-phase inverter kit
Test point name Function
GHW Gate high-side W phase
GLU Gate low-side U phase
GLV Gate low-side V phase
GLW Gate low-side W phase
TSENSELU Temperature sense test point low-side U phase input to TSENSEA
VDCLINKW DC link voltage test point low-side W phase input to AMUXIN
Table 3. Test points...continued
4.2.4 Indicators
The RDGD31603PSMKEVM evaluation board contains LEDs as visual indicators on the
board.
Figure 4. RDGD31603PSMKEVM indicator locations
Name Description
INTBL LED Indicates that a GD3160 INTB fault interrupt has occurred on the low side devices
INTBH LED Indicates that a GD3160 INTB fault interrupt has occurred on the high side devices
Table 4. RDGD31603PSMKEVM indicator descriptions
UM11697 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2021. All rights reserved.
User manual Rev. 1 — 10 December 2021
10 / 39
Ce manuel convient aux modèles suivants
1
Table des matières
Autres manuels NXP Semiconductors Onduleur
