NXP Semiconductors BGM1012 Manuel utilisateur

DATA SHEET

Product specification

Supersedes data of 2002 May 16 2002 Sep 06

DISCRETE SEMICONDUCTORS

BGM1012

MMIC wideband amplifier

dbook, halfpage

MBD128

2002 Sep 06 2

NXP Semiconductors Product specification

MMIC wideband amplifier BGM1012

FEATURES

Internally matched to 50 

Very wide frequency range (4 GHz at 3 dB bandwidth)

Very flat 20 dB gain (DC to 2.9 GHz at 1 dB flatness)

10 dBm saturated output power at 1 GHz

High linearity (18 dBm IP3(out) at 1 GHz)

Low current (14.6 mA)

Unconditionally stable.

APPLICATIONS

LNB IF amplifiers

Cable systems

ISM

General purpose.

DESCRIPTION

Silicon Monolithic Microwave Integrated Circuit (MMIC)

wideband amplifier with internal matching circuit in a 6-pin

SOT363 SMD plastic package.

PINNING

PIN DESCRIPTION

2, 5 GND2

3RFout

4GND1

6RFin

MAM455

132

2, 54

Top view

Fig.1 Simplified outline (SOT363) and symbol.

Marking code: C2-.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

VSDC supply voltage 3 4 V

ISDC supply current 14.6 mA

s212insertion power gain f = 1 GHz 20.1 dB

NF noise figure f = 1 GHz 4.8 dB

PL(sat) saturated load power f = 1 GHz 9.7 dBm

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport

and handling.

2002 Sep 06 3

NXP Semiconductors Product specification

MMIC wideband amplifier BGM1012

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VSDC supply voltage RF input AC coupled 4V

ISsupply current 50 mA

Ptot total power dissipation Ts90 C200 mW

Tstg storage temperature 65 +150 C

Tjoperating junction temperature 150 C

PDmaximum drive power 10 dBm

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-s thermal resistance from junction to

solder point Ptot = 200 mW; Ts90 C300K/W

2002 Sep 06 4

NXP Semiconductors Product specification

MMIC wideband amplifier BGM1012

CHARACTERISTICS

VS=3V;I

S=14.6mA;T

j=25C; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ISsupply current 11 14.6 19 mA

s212insertion power gain f = 100 MHz 19 19.5 20 dB

f = 1 GHz 19 20.1 21 dB

f = 1.8 GHz 19 20.4 21 dB

f = 2.2 GHz 19 20.4 22 dB

f = 2.6 GHz 18 19.9 21 dB

f = 3 GHz 16 18.7 20 dB

RLIN return losses input f = 1 GHz 9 11 dB

f = 2.2 GHz 13 15 dB

RLOUT return losses output f = 1 GHz 11 14 dB

f = 2.2 GHz 10 13 dB

s122isolation f = 1 GHz 30 33 dB

f = 2.2 GHz 35 38 dB

NF noise figure f = 1 GHz 4.8 5.1 dB

f=2.2GHz 4.9 5.3 dB

BW bandwidth at s2123 dB below flat gain at 1 GHz 3.1 3.6 GHz

K stability factor f = 1 GHz 1.5 2.1 

f=2.2GHz 3 3.4 

PL(sat) saturated load power f = 1 GHz 8 9.7 dBm

f = 2.2 GHz 3.5 5.6 dBm

PL1dB load power at 1 dB gain compression; f = 1 GHz 4 6.0 dBm

at 1 dB gain compression; f = 2.2 GHz 1.5 3.4 dBm

IP3(in) input intercept point f = 1 GHz 42dBm

f=2.2GHz 97dBm

IP3(out) output intercept point f = 1 GHz 16 18 dBm

f = 2.2 GHz 11 13 dBm

2002 Sep 06 5

NXP Semiconductors Product specification

MMIC wideband amplifier BGM1012

APPLICATION INFORMATION

Figure 2 shows a typical application circuit for the

BGM1012 MMIC. The device is internally matched to

50 , and therefore does not need any external matching.

The value of the input and output DC blocking capacitors

C2 and C3 should not be more than 100 pF for

applications above 100 MHz.However, whenthedeviceis

operated below 100 MHz, the capacitor value should be

increased.

The nominal value of the RF choke L1 is 100 nH. At

frequencies below 100 MHz this value should be

increased to 220 nH. At frequencies above 1 GHz a much

lower value (e.g. 10 nH) can be used to improve return

losses. For optimal results, a good quality chip inductor

such as the TDK MLG 1608 (0603), or a wire-wound SMD

type should be chosen.

Both the RF choke L1 and the 22 nF supply decoupling

capacitor C1 should be located as closely as possible to

the MMIC.

Separate paths must be used for the ground planes of the

groundpinsGND1andGND2,and thesepathsmustbe as

short as possible. When using vias, use multiple vias per

pin in order to limit ground path inductance.

Figure 3 shows two cascaded MMICs. This configuration

doubles overall gain while preserving broadband

characteristics. Supply decoupling and grounding

conditions for each MMIC are the same as those for the

circuit of Fig.2.

The excellent wideband characteristics of the MMIC make

it an ideal building block in IF amplifier applications such

as LBNs (see Fig.4).

As a buffer amplifier between an LNA and a mixer in a

receiver circuit, the MMIC offers an easy matching, low

noise solution (see Fig.5).

InFig.6theMMICis used as adrivertothe power amplifier

as part of a transmitter circuit. Good linear performance

and matched input and output offer quick design solutions

in such applications.

handbook, halfpage

MGU436

RF outRF in

C1 L1

C2 C3

GND2GND1

RF input RF output

Fig.2 Typical application circuit.

handbook, halfpage DC-block

100 pF DC-block

100 pF

DC-block

100 pF

input output

MGU437

Fig.3 Easy cascading application circuit.

handbook, halfpage

from RF

circuit to IF circuit

or demodulator

MGU438

mixer

oscillator

wideband

amplifier

Fig.4 Application as IF amplifier.

handbook, halfpage

antenna to IF circuit

or demodulator

MGU439

mixer

oscillator

LNA wideband

amplifier

Fig.5 Application as RF amplifier.

handbook, halfpage

from modulation

or IF circuit to power

amplifier

MGU440

mixer

oscillator

wideband

amplifier

Fig.6 Application as driver amplifier.

2002 Sep 06 6

NXP Semiconductors Product specification

MMIC wideband amplifier BGM1012

handbook, full pagewidth

MLD910

0.2

0.6

0.4

0.8

1.0

+0.5

+0.2

−0.2

−0.5

−1

−2

−5

0.2 0.5 4 GHz 100 MHz2 5

180°

135°

90°

45°

0°

−45°

−90°

−135°

Fig.7 Input reflection coefficient (s11); typical values.

IS=14.6mA;V

S=3V;P

D=30 dBm; ZO=50

handbook, full pagewidth

MLD911

0.2

0.6

0.4

0.8

1.0

+0.5

+0.2

−0.2

−0.5

−1

−2

−5

0.2 0.5

4 GHz

100 MHz

1 2 5

180°

135°

90°

45°

0°

−45°

−90°

−135°

Fig.8 Output reflection coefficient (s22); typical values.

IS=14.6mA;V

S=3V;P

D=30 dBm; ZO=50

2002 Sep 06 7

NXP Semiconductors Product specification

MMIC wideband amplifier BGM1012

handbook, halfpage

0 1000 f (MHz)

2000 4000

−50

−10

3000

−20

−30

−40

MLD912

s12 2

(dB)

Fig.9 Isolation (s122)asafunctionoffrequency;

typical values.

IS=14.6mA;V

S=3V;P

D=30 dBm; ZO=50

handbook, halfpage

0f (MHz)

(1)

(3)

10 1000 2000 4000

3000

MLD913

s21 2

(dB)

(2)

Fig.10 Insertion gain (s212) as a function of

frequency; typical values.

PD=30 dBm; ZO=50

(1) IS=18.7mA;V

S=3.3V.

(2) IS=14.6mA;V

S=3V.

(3) IS=10.6mA;V

S=2.7V.

handbook, halfpage

−40 −30 PD(dBm)

(dBm)

−20 0

−10

−20

−10

MLD914

(1) (2)

(3)

Fig.11 Load power as a function of drive power at

1 GHz; typical values.

f=1GHz;Z

O=50

(1) VS=3.3V.

(2) VS=3V.

(3) VS=2.7V.

handbook, halfpage

−40 −30 PD(dBm)

(dBm)

−20 0

(1)

(2)(3)

−10

−20

−10

MLD915

Fig.12 Load power as a function of drive power at

2.2 GHz; typical values.

f=2.2GHz;Z

O=50

(1) VS=3.3V.

(2) VS=3V.

(3) VS=2.7V.

2002 Sep 06 8

NXP Semiconductors Product specification

MMIC wideband amplifier BGM1012

handbook, halfpage

(1)

(2)

(3)

1000 2000 f (MHz)

(dB)

3000

5.5

4.5

5.3

5.1

4.9

4.7

MLD916

Fig.13 Noise figure as a function of frequency;

typical values.

ZO=50

(1) IS=10.6mA;V

S=2.7V.

(2) IS=14.6mA;V

S=3V.

(3) IS=18.7mA;V

S=3.3V.

handbook, halfpage

0f (MHz)

01000 2000 40003000

MLD917

Fig.14 Stability factor as a function of frequency;

typical values.

IS=14.6mA;V

S=3V;P

D=30 dBm; ZO=50

2002 Sep 06 9

NXP Semiconductors Product specification

MMIC wideband amplifier BGM1012

Scattering parameters

VS=3V;I

S=14.6mA;P

D=30 dBm; ZO=50; Tamb =25C.

f(MHz) s11 s21 s12 s22 K-

FACTOR

MAGNITUDE

(ratio) ANGLE

(deg) MAGNITUDE

(ratio) ANGLE

(deg) MAGNITUDE

(ratio) ANGLE

(deg) MAGNITUDE

(ratio) ANGLE

(deg)

100 0.25122 14.607 9.33681 12.018 0.032124 16.445 0.26458 64.156 1.6

200 0.27070 2.759 9.42458 5.676 0.028303 6.37 0.20645 64.153 1.8

400 0.27979 7.969 9.63627 8.447 0.026297 4.545 0.1543 52.558 1.9

600 0.28323 14.78 9.76543 19.02 0.024833 10.24 0.15203 39.347 1.9

800 0.28557 20.13 9.93782 27.93 0.023234 14.62 0.16867 27.926 2.0

1000 0.28673 24.14 10.03633 36.88 0.021523 17.42 0.19196 19.293 2.1

1200 0.28517 27.57 10.11638 46.47 0.019830 19.83 0.21421 12.703 2.2

1400 0.27902 29.93 10.26450 56.05 0.018230 21.14 0.23292 7.154 2.4

1600 0.26682 31.81 10.40572 65.76 0.016902 21.62 0.24605 2.582 2.5

1800 0.24746 33.12 10.44088 76.97 0.015759 22.32 0.25113 1.26 2.7

2000 0.21894 33.8 10.46224 88.33 0.014310 22.64 0.24367 4.817 3.0

2200 0.18164 32.67 10.45202 100.3 0.013012 23.13 0.22184 7.573 3.4

2400 0.14000 26.75 10.34342 112.6 0.011826 23.27 0.18787 8.489 3.9

2600 0.10418 10.16 9.87989 122.9 0.010171 23.23 0.13049 4.601 4.9

2800 0.09469 15.051 9.20393 129.5 0.008664 16.9 0.1294 9.578 6.2

3000 0.10595 33.415 8.68177 135.4 0.007541 9.957 0.1127 18.402 7.5

3200 0.11609 42.888 8.18809 142.2 0.006655 0.835 0.092234 23.406 9.0

3400 0.10827 50.017 7.93039 151.5 0.006042 12.444 0.059268 26.453 10.3

3600 0.09866 60.967 7.77538 162.2 0.006205 29.297 0.015829 38.211 10.3

3800 0.08693 80.355 7.33775 172.6 0.007039 40.351 0.028159 152.8 9.6

4000 0.10090 102.07 6.90878 177.1 0.008241 46.053 0.075298 133.1 8.7

2002 Sep 06 10

NXP Semiconductors Product specification

MMIC wideband amplifier BGM1012

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT363 SC-88

wBM

pin 1

index A

detail X

vMA

0 1 2 mm

scale

132

456

Plastic surface-mounted package; 6 leads SOT363

UNIT A1

max bpcDEe1HELpQywv

mm 0.1 0.30

0.20 2.2

1.8

0.25

0.10 1.35

1.15 0.65

1.3 2.2

2.0 0.2 0.10.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15 0.25

0.15

1.1

0.8

04-11-08

06-03-16

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